DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 100 mΩ 3. Applications • • • • High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -30 V VGS gate-source voltage -20 - 20 V ID drain current - - -2.4 A - 100 120 mΩ VGS = -10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -10 V; ID = -2.4 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain Simplified outline Graphic symbol D 1 4 3 G 2 S Transparent top view 017aaa259 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package PMXB120EPE Name Description Version DFN1010D-3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm SOT1215 7. Marking Table 4. Marking codes Type number Marking code PMXB120EPE 10 01 00 MARKING CODE (EXAMPLE) READING DIRECTION YEAR DATE CODE VENDOR CODE PIN 1 INDICATION MARK MARK-FREE AREA READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary marking code description PMXB120EPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 2 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -30 V VGS gate-source voltage -20 20 V ID drain current VGS = -10 V; Tamb = 25 °C [1] - -2.4 A VGS = -10 V; Tamb = 100 °C [1] - -1.5 A - -10 A [2] - 0.4 W [1] - 1.07 W - 8.33 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -0.9 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMXB120EPE Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 24 September 2013 25 © NXP N.V. 2013. All rights reserved 3 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-009243 -102 ID (A) -10 tp = 10 µs tp = 100 µs -1 DC; Tsp = 25 °C tp = 1 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-1 -10-2 -10-1 -1 tp = 10 ms tp = 100 ms -10 -102 VDS (V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMXB120EPE Product data sheet Min Typ Max Unit [1] - 271 312 K/W [2] - 102 117 K/W - 10 15 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 4 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-008918 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 aaa-008919 duty cycle = 1 0.75 0.5 0.33 Zth(j-a) (K/W) 102 10 0.02 0.01 0 1 10-3 0.25 0.2 0.1 0.05 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMXB120EPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 5 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -1 -1.5 -2.5 V IDSS drain leakage current VDS = -30 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = -10 V; ID = -2.4 A; Tj = 25 °C - 100 120 mΩ VGS = -10 V; ID = -2.4 A; Tj = 150 °C - 156 187 mΩ VGS = -4.5 V; ID = -2 A; Tj = 25 °C - 125 170 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = -10 V; ID = -2.4 A; Tj = 25 °C - 5 - S RG gate resistance f = 1 MHz - 14.5 - Ω Dynamic characteristics QG(tot) total gate charge VDS = -15 V; ID = -2.4 A; VGS = -10 V; - 6.2 11 nC QGS gate-source charge Tj = 25 °C - 0.9 - nC QGD gate-drain charge - 1.1 - nC Ciss input capacitance VDS = -15 V; f = 1 MHz; VGS = 0 V; - 309 - pF Coss output capacitance Tj = 25 °C - 41 - pF Crss reverse transfer capacitance - 32 - pF td(on) turn-on delay time VDS = -15 V; ID = -2.4 A; VGS = -10 V; - 4 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 11 - ns td(off) turn-off delay time - 16 - ns tf fall time - 7 - ns - -0.8 -1.2 V Source-drain diode VSD source-drain voltage PMXB120EPE Product data sheet IS = -0.9 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 6 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-009331 -10 ID (A) -5.0 V ID (A) -4.0 V -4.5 V aaa-009332 -10-3 -10-4 -8 -10.0 V -6 -3.5 V min typ max -10-5 -10-6 -4 VGS = -3.0 V -10-7 -2 0 Fig. 7. 0 -1 -2 -3 VDS (V) -10-8 -4 0 -1 -2 VGS (V) -3 Tj = 25 °C Tj = 25 °C; VDS = -5 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-009333 400 RDSon (mΩ) -3 V aaa-009334 600 -3.5 V RDSon (mΩ) 300 400 -4 V -4.5 V 200 200 -5 V 100 Tj = 150 °C VGS = -10 V Tj = 25 °C 0 0 -2 -4 -6 -8 ID (A) 0 -10 Tj = 25 °C Fig. 9. Product data sheet -2 -4 -6 -8 -10 VGS (V) ID = -2.4 A Drain-source on-state resistance as a function of drain current; typical values PMXB120EPE 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 7 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-009335 -10 aaa-009336 2.0 ID (A) a -8 1.5 -6 1.0 -4 0.5 Tj = 150 °C -2 Tj = 25 °C 0 0 -1 -2 -3 -4 VGS (V) 0 -60 -5 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-009337 -3 0 60 120 aaa-009338 C (pF) max -2 180 Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values 103 VGS(th) (V) Tj (°C) Ciss 102 Coss Crss typ -1 10 min 0 -60 0 60 120 Tj (°C) 1 -10-1 180 ID = -0.25 mA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 13. Gate-source threshold voltage as a function of junction temperature PMXB120EPE -1 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 8 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET aaa-009339 -10 VDS VGS (V) ID -8 VGS(pl) -6 VGS(th) VGS -4 QGS1 QGS2 QGS -2 QGD QG(tot) 017aaa137 0 0 2 4 6 QG (nC) Fig. 16. MOSFET transistor: Gate charge waveform definitions 8 ID = -2.4 A; VDS = -15 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-009340 -4 IS (A) -3 -2 -1 Tj = 150 °C Tj = 25 °C 0 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMXB120EPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 9 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET 12. Package outline DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215 visible depend upon used manufacturing technology (2x) solderable lead end, protrusion max. 0.02 mm (3x) pin 1 index area visible depend upon used manufacturing technology (4x) e b (2x) 1 2 L (2x) E E1 e1 L1 D A1 3 b1 A D1 0 1 mm scale Dimensions (mm are the original dimensions) Unit A A1 b b1 D D1 E E1 e e1 min 0.34 0.22 0.245 1.05 0.87 0.95 0.16 nom 0.37 0.25 0.275 1.10 0.90 1.00 0.19 0.75 max 0.40 0.04 0.30 0.325 1.15 0.95 1.05 0.24 mm 0.1 L L1 0.17 0.195 0.20 0.225 0.25 0.275 Note 1. Dimension A is including plating thickness. Outline version sot1215_po References IEC JEDEC JEITA European projection Issue date 13-03-05 13-03-06 SOT1215 Fig. 19. Package outline DFN1010D-3 (SOT1215) PMXB120EPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 10 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215) PMXB120EPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 11 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMXB120EPE v.1 20130924 Product data sheet - - PMXB120EPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 12 / 15 PMXB120EPE NXP Semiconductors 30 V, P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 September 2013 PMXB120EPE Product data sheet All information provided in this document is subject to legal disclaimers. 24 September 2013 © NXP N.V. 2013. All rights reserved 15 / 15