Data Sheet

83B
NX3008NBKMB
SO
T8
30 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching
 ESD protection up to 2 kV
 Low threshold voltage
 Ultra thin package profile with
0.37 mm height
 Trench MOSFET technology
1.3 Applications
 Relay driver
 Low-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
30
V
VGS
gate-source voltage
-8
-
8
V
-
-
530
mA
-
1
1.4
Ω
drain current
ID
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX3008NBKMB
NXP Semiconductors
30 V, single N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
S
source
1
3
D
drain
2
Graphic symbol
D
3
Transparent
top view
G
SOT883B (DFN1006B-3)
S
017aaa255
3. Ordering information
Table 3.
Ordering information
Type number
NX3008NBKMB
Package
Name
Description
Version
DFN1006B-3
Leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.37 mm
SOT883B
4. Marking
Table 4.
Marking codes
Type number
Marking code
NX3008NBKMB
0000 0011
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
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Product data sheet
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5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
30
V
VGS
gate-source voltage
drain current
ID
total power dissipation
Ptot
8
V
VGS = 4.5 V; Tamb = 25 °C
-
530
mA
VGS = 4.5 V; Tamb = 100 °C
[1]
-
330
mA
Tamb = 25 °C; single pulse; tp ≤ 10 µs
peak drain current
IDM
-8
[1]
Tamb = 25 °C
-
2.1
A
[2]
-
360
mW
[1]
-
715
mW
-
2700
mW
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
Source-drain diode
source current
IS
Tamb = 25 °C
[1]
-
530
mA
HBM
[3]
-
2000
V
ESD maximum rating
electrostatic discharge voltage
VESD
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Measured between all pins.
001aao121
120
Pder
(%)
Ider
(%)
80
80
40
40
0
-75
Fig 2.
001aao122
120
-25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
NX3008NBKMB
Product data sheet
0
-75
175
Fig 3.
-25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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30 V, single N-channel Trench MOSFET
aaa-002631
10
ID
(A)
limit RDSon = VDS / ID
1
(1)
10-1
(2)
(3)
(4)
(5)
10-2
10-1
1
10
102
VDS (V)
IDM is single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 °C
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
305
360
K/W
[2]
-
150
175
K/W
-
-
40
K/W
thermal resistance
from junction to solder
point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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30 V, single N-channel Trench MOSFET
017aaa109
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.25
0.2
0.1
0.05
0
0.02
0.01
10
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.25
0.33
0.2
0.1
0
10
10−3
0.05
0.02
0.01
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 6.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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30 V, single N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.6
0.9
1.1
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 30 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
0.2
1
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
0.2
1
µA
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
-
1
1.4
Ω
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
VGS = 4.5 V; ID = 350 mA; Tj = 150 °C
-
1.8
2.5
Ω
VGS = 2.5 V; ID = 200 mA; Tj = 25 °C
-
1.4
2.1
Ω
VGS = 1.8 V; ID = 10 mA; Tj = 25 °C
-
2
2.8
Ω
VDS = 10 V; ID = 350 mA; Tj = 25 °C
-
310
-
mS
VDS = 15 V; ID = 400 mA; VGS = 4.5 V;
Tj = 25 °C
-
0.52
0.68
nC
-
0.17
-
nC
-
0.08
-
nC
-
34
50
pF
-
6.5
-
pF
-
2.2
-
pF
-
15
30
ns
-
11
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
69
138
ns
tf
fall time
-
19
-
ns
0.47
0.85
1.2
V
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 20 V; RL = 250 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
NX3008NBKMB
Product data sheet
IS = 350 mA; VGS = 0 V; Tj = 25 °C
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30 V, single N-channel Trench MOSFET
001aao267
0.4
ID
(A)
2.5 V
001aao268
10-3
4.5 V
ID
(A)
2V
0.3
(2)
(1)
(3)
10-4
1.75 V
0.2
10-5
1.5 V
0.1
VGS = 1.25 V
0.0
0
1
2
3
VDS (V)
10-6
0.0
4
Tj = 25 °C
0.5
1.0
VGS (V)
1.5
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7.
Output characteristics: drain current as a
function of drain-source voltage; typical values
001aao269
6
Fig 8.
Subthreshold drain current as a function of
gate-source voltage
001aao270
6
RDS (on)
(Ω)
RDS (on)
(Ω)
(1)
(2)
(3)
4
4
(4)
2
2
(1)
(5)
(2)
(6)
0
0.0
0.1
0.2
0.3
ID (A)
0.4
0
0
1
Tj = 25 °C
ID = 400 mA
(1) VGS = 1.5 V
(1) Tj = 150 °C
(2) VGS = 1.75 V
(2) Tj = 25 °C
2
3
4
VGS (V)
5
(3) VGS = 2.0 V
(4) VGS = 2.25 V
(5) VGS = 2.5 V
(6) VGS = 4.5 V
Fig 9.
Drain-source on-state resistance as a function
of drain current; typical values
NX3008NBKMB
Product data sheet
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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30 V, single N-channel Trench MOSFET
001aao271
0.4
ID
(A)
a
(1)
(2)
0.3
1.5
0.2
1.0
0.1
0.5
0.0
001aao272
2.0
0
1
2
VGS (V)
0.0
-60
3
0
60
120
Tj (˚C)
180
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
001aao273
1.5
Fig 12. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
001aao274
102
VGS(th)
(V)
(1)
C
(pF)
(1)
1.0
(2)
10
0.5
(2)
(3)
(3)
0.0
-60
0
60
120
Tj (˚C)
180
1
10-1
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(1)Ciss
(2) typical values
(2)Coss
(3) minimum values
(3)Crss
Fig 13. Gate-source threshold voltage as a function of
junction temperature
NX3008NBKMB
Product data sheet
10
VDS (V)
102
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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30 V, single N-channel Trench MOSFET
001aao275
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
003aaa508
0
0.0
0.2
0.4
QG (nC)
0.6
ID = 0.4 A; VDS = 15 V; Tamb = 25 °C
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Gate charge waveform definitions
001aao276
0.4
IS
(A)
0.3
(1)
(2)
0.2
0.1
0.0
0.0
0.4
0.6
VSD (V)
1.2
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 17. Source current as a function of source-drain voltage; typical values
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30 V, single N-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 18. Duty cycle definition
9. Package outline
0.65
0.55
0.40
0.34
0.35
1
2
0.20
0.12
0.04 max
0.30
0.22
1.05
0.65
0.95
0.30
0.22
3
0.55
0.47
Dimensions in mm
11-11-02
Fig 19. Package outline SOT883B (DFN1006B-3)
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10. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3)
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11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX3008NBKMB v.1
20120511
Product data sheet
-
-
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Product data sheet
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12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this document is believed to
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
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NXP Semiconductors does not accept any liability related to any default,
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
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Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2012
© NXP B.V. 2012. All rights reserved.
14 of 15
NX3008NBKMB
NXP Semiconductors
30 V, single N-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information . . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 May 2012
Document identifier: NX3008NBKMB