Data Sheet

SO
T2
3
NX3020NAK
30 V, single N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
30
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
200
mA
-
2.7
4.5
Ω
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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NX3020NAK
NXP Semiconductors
30 V, single N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
1
2
G
TO-236AB (SOT23)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
Package
NX3020NAK
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
NX3020NAK
%CU
[1]
% = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
30
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1]
-
200
mA
VGS = 10 V; Tamb = 100 °C
[1]
-
125
mA
-
800
mA
[2]
-
300
mW
[1]
-
360
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
NX3020NAK
Product data sheet
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30 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Max
Unit
Tsp = 25 °C
-
1060
mW
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
200
mA
Source-drain diode
IS
source current
[1]
[2]
Tamb = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa001
120
Pder
(%)
017aaa002
120
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
[1]
- 25
25
75
Normalized total power dissipation as a
function of ambient temperature
NX3020NAK
Product data sheet
0
- 75
125
175
Tamb (°C)
Fig. 2.
- 25
75
125
175
Tamb (°C)
Normalized continuous drain current as a
function of ambient temperature
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NX3020NAK
NXP Semiconductors
30 V, single N-channel Trench MOSFET
017aaa660
1
Limit RDSon = VDS/ID
ID
(A)
tp = 100 µs
tp = 1 ms
10-1
tp = 10 ms
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
10-2
10-3
10-1
1
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
NX3020NAK
Product data sheet
Min
Typ
Max
Unit
[1]
-
350
400
K/W
[2]
-
300
340
K/W
-
-
115
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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NX3020NAK
NXP Semiconductors
30 V, single N-channel Trench MOSFET
017aaa661
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
102
10
103
tp (s)
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa662
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
1
102
10
103
tp (s)
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 A; VDS = VGS; Tj = 25 °C
0.8
1.2
1.5
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 30 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
NX3020NAK
Product data sheet
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NX3020NAK
NXP Semiconductors
30 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
3.5
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-3.5
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
0.5
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-0.5
µA
VGS = 10 V; ID = 100 mA; pulsed;
-
2.7
4.5
Ω
-
5.5
9.2
Ω
-
3
5.2
Ω
-
4
13
Ω
320
-
-
mS
RDSon
drain-source on-state
resistance
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
VGS = 10 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 150 °C
VGS = 4.5 V; ID = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
VGS = 2.5 V; ID = 10 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
gfs
forward
transconductance
VDS = 10 V; ID = 150 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C
Dynamic characteristics
QG(tot)
total gate charge
VDS = 15 V; ID = 150 mA; VGS = 4.5 V;
-
0.34
0.44
nC
QGS
gate-source charge
Tj = 25 °C
-
0.11
-
nC
QGD
gate-drain charge
-
0.06
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
13
20
pF
Coss
output capacitance
Tj = 25 °C
-
2.6
-
pF
Crss
reverse transfer
capacitance
-
1.1
-
pF
td(on)
turn-on delay time
VDS = 20 V; RL = 250 Ω; VGS = 10 V;
-
5
10
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
5
-
ns
td(off)
turn-off delay time
-
34
68
ns
tf
fall time
-
17
-
ns
0.47
0.7
1.2
V
Source-drain diode
VSD
source-drain voltage
NX3020NAK
Product data sheet
IS = 115 mA; VGS = 0 V; Tj = 25 °C
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NX3020NAK
NXP Semiconductors
30 V, single N-channel Trench MOSFET
017aaa663
0.5
10 V
4.5 V
ID
(A)
0.4
017aaa664
10-3
3.5 V
ID
(A)
3V
10-4
0.3
min
typ
max
2.5 V
0.2
10-5
0.1
0
Fig. 6.
VGS = 2 V
0
1
2
3
10-6
4
VDS (V)
0
0.5
1.0
1.5
VGS (V)
2.0
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
017aaa665
10
2V
RDSon
(Ω)
2.5 V
017aaa666
12
3V
RDSon
(Ω)
8
8
6
4.5 V
4
VGS = 10 V
2
0
Tj = 150 °C
3.5 V
4
Tj = 25 °C
0
0.1
0.2
0.3
0.4
ID (A)
0
0.5
Tj = 25 °C
Fig. 8.
Product data sheet
2
4
6
8
10
VGS (V)
ID = 0.15 A
Drain-source on-state resistance as a function
of drain current; typical values
NX3020NAK
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
30 V, single N-channel Trench MOSFET
017aaa667
0.4
017aaa668
2.5
a
ID
(A)
2.0
0.3
1.5
0.2
1.0
0.1
Tj = 150 °C
0
0
0.5
Tj = 25 °C
1
2
3
VGS (V)
0
-60
4
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa669
2.0
0
60
120
017aaa670
C
(pF)
1.5
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
102
VGS(th)
(V)
Tj (°C)
Ciss
max
10
typ
1.0
Coss
min
1
0.5
0
-60
Crss
0
60
120
Tj (°C)
10-1
10-1
180
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
ID = 0.25 mA; VDS = VGS
NX3020NAK
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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NX3020NAK
NXP Semiconductors
30 V, single N-channel Trench MOSFET
017aaa671
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
2
QGD
QG(tot)
017aaa137
0
0
0.2
0.4
0.6
QG (nC)
Fig. 15. Gate charge waveform definitions
0.8
ID = 0.15 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa672
0.5
IS
(A)
0.4
0.3
0.2
0.1
0
Tj = 150 °C
0
0.4
Tj = 25 °C
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
NX3020NAK
Product data sheet
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30 V, single N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
NX3020NAK
Product data sheet
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30 V, single N-channel Trench MOSFET
13. Soldering
3.3
2.9
1.9
solder lands
3
solder resist
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
NX3020NAK
Product data sheet
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30 V, single N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
NX3020NAK v.2
20131029
Product data sheet
-
NX3020NAK v.1
Modifications:
•
3D package outline added
•
Table 7 values of capacitance parameters corrected
•
Figure 13 corrected
NX3020NAK v.1
NX3020NAK
Product data sheet
20121002
Product data sheet
-
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NX3020NAK
NXP Semiconductors
30 V, single N-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
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with the same product type number(s) and title. A short data sheet is
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
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NX3020NAK
Product data sheet
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product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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30 V, single N-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NX3020NAK
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
14 / 15
NX3020NAK
NXP Semiconductors
30 V, single N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 October 2013
NX3020NAK
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
15 / 15