Data Sheet

SO
T8
83
PMZ200UNE
30 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
Very fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small package: 1.0 × 0.6 × 0.48 mm
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
30
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
1.4
A
-
210
250
mΩ
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
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PMZ200UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
1
2
S
source
2
3
D
drain
Graphic symbol
D
3
Transparent
top view
G
DFN1006-3 (SOT883)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
PMZ200UNE
Package
Name
Description
Version
DFN1006-3
DFN1006-3: leadless ultra small plastic package; 3 solder lands
SOT883
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMZ200UNE
ZV
PMZ200UNE
Product data sheet
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PMZ200UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
30
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
1.4
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
0.9
A
-
5
A
[2]
-
350
mW
[1]
-
760
mW
-
6250
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.7
A
Source-drain diode
IS
source current
[1]
[2]
Tamb = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
120
Pder
(%)
017aaa124
120
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
[1]
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMZ200UNE
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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PMZ200UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
aaa-016973
10
tp = 10 µs
Limit RDSon = VDS/ID
ID
(A)
1
tp = 100 µs
tp = 1 ms
DC; Tsp = 25 °C
10-1
tp = 10 ms
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
10-2
10-1
tp = 100 ms
1
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
PMZ200UNE
Product data sheet
Min
Typ
Max
Unit
[1]
-
315
360
K/W
[2]
-
145
165
K/W
-
17
20
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
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PMZ200UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
aaa-016012
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102
0.33
0.20
0.10
0.25
0.05
0
0.01
0.02
10
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-016013
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.50
0.33
0.20
0.10
0.25
0.05
0.02
0 0.01
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ200UNE
Product data sheet
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PMZ200UNE
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30 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.45
0.7
0.95
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
5
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-5
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C
-
210
250
mΩ
VGS = 4.5 V; ID = 1.4 A; Tj = 150 °C
-
347
410
mΩ
VGS = 2.5 V; ID = 1.2 A; Tj = 25 °C
-
240
310
mΩ
VGS = 1.8 V; ID = 1 A; Tj = 25 °C
-
270
380
mΩ
VGS = 1.5 V; ID = 0.01 A; Tj = 25 °C
-
300
490
mΩ
VDS = 10 V; ID = 1 A; Tj = 25 °C
-
4.1
-
S
total gate charge
VDS = 15 V; ID = 1.5 A; VGS = 4.5 V;
-
1.6
2.7
nC
QGS
gate-source charge
Tj = 25 °C
-
0.1
-
nC
QGD
gate-drain charge
-
0.4
-
nC
Ciss
input capacitance
VDS = 15 V; f = 1 MHz; VGS = 0 V;
-
89
-
pF
Coss
output capacitance
Tj = 25 °C
-
11
-
pF
Crss
reverse transfer
capacitance
-
9
-
pF
td(on)
turn-on delay time
VDS = 15 V; ID = 0.8 A; VGS = 4.5 V;
-
5
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
10
-
ns
td(off)
turn-off delay time
-
17
-
ns
tf
fall time
-
3
-
ns
-
0.86
1.2
V
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMZ200UNE
Product data sheet
IS = 0.7 A; VGS = 0 V; Tj = 25 °C
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PMZ200UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
aaa-016974
4
VGS = 4.5 V
ID
(A)
2.5 V
2.0 V
3
aaa-016975
10-3
ID
(A)
1.8 V
10-4
2
1.5 V
(1)
10-5
(2)
(3)
1
1.2 V
0
Fig. 6.
0
1
2
3
VDS (V)
10-6
4
0
0.5
1
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7.
aaa-016976
1.5
1.2 V
1.5 V
RDSon
(Ω)
RDSon
1.0
1.0
0.5
1.5
Sub-threshold drain current as a function of
gate-source voltage
aaa-016977
1.5
1.8 V
VGS (V)
0.5
2.0 V
Tj = 150 °C
2.5 V
VGS = 4.5 V
0
0
1
2
3
ID (A)
Tj = 25 °C
0
4
Tj = 25 °C
Fig. 8.
Product data sheet
1
2
3
4
VGS (V)
5
ID = 1.5 A
Drain-source on-state resistance as a function
of drain current; typical values
PMZ200UNE
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMZ200UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
aaa-016978
4
Tj = 150 °C
ID
(A)
a
Tj = 25 °C
3
1.5
2
1.0
1
0.5
0
0
aaa-016979
2.0
1
2
3
VGS (V)
0
-60
4
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-016980
1.5
0
aaa-016981
103
C
(pF)
VGS(th)
(V)
1.0
(1)
102
(1)
(2)
(2)
0.5
0
-60
10
(3)
0
60
120
Tj (°C)
1
10-1
180
(3)
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(2) typical values
(3) minimum values
(1) Ciss
Product data sheet
VDS (V)
102
(2) Coss
(3) Crss
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMZ200UNE
10
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMZ200UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
aaa-016982
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
017aaa137
0
0
0.5
1.0
1.5
QG (nC)
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
2.0
ID = 0.8 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-016983
3
IS
(A)
2
1
Tj = 150 °C
0
Tj = 25 °C
0
0.4
0.8
1.2
1.6
2.0
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMZ200UNE
Product data sheet
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30 V, N-channel Trench MOSFET
12. Package outline
0.62
0.55
0.55
0.47
0.50
0.46
3
0.30
0.22
0.65
0.30
0.22
2
0.20
0.12
1.02
0.95
1
0.35
Dimensions in mm
03-04-03
Fig. 18. Package outline DFN1006-3 (SOT883)
13. Soldering
1.3
0.7
R0.05 (12×)
solder lands
0.9
0.6
0.7
solder resist
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.3
0.4
(2×)
0.4
Dimensions in mm
sot883_fr
Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883)
PMZ200UNE
Product data sheet
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30 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMZ200UNE v.1
20150312
Product data sheet
-
-
PMZ200UNE
Product data sheet
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PMZ200UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMZ200UNE
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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No offer to sell or license — Nothing in this document may be interpreted
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30 V, N-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without NXP Semiconductors’ warranty
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Translations — A non-English (translated) version of a document is for
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between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMZ200UNE
Product data sheet
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30 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 10
14
Revision history ................................................... 11
15
15.1
15.2
15.3
15.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 March 2015
PMZ200UNE
Product data sheet
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12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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