Data Sheet

SO
T8
83
PMZ370UNE
30 V, N-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
30
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
900
mA
-
370
490
mΩ
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 1 cm .
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
1
2
S
source
2
3
D
drain
Graphic symbol
D
3
Transparent
top view
G
DFN1006-3 (SOT883)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
PMZ370UNE
Package
Name
Description
Version
DFN1006-3
DFN1006-3: leadless ultra small plastic package; 3 solder lands
SOT883
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMZ370UNE
ZM
PMZ370UNE
Product data sheet
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
30
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
900
mA
VGS = 4.5 V; Tamb = 100 °C
[1]
-
560
mA
-
3.6
A
[2]
-
360
mW
[1]
-
715
mW
-
2700
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
680
mA
HBM
[3]
-
2000
V
ESD maximum rating
VESD
electrostatic discharge voltage
PMZ370UNE
Product data sheet
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
[2]
[3]
drain 1 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
2
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
0
- 75
175
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
- 25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
017aaa566
10
Limit RDSon = VDS/ID
ID
(A)
1
tp = 1 µs
10-1
DC; Tsp = 25 °C
tp = 10 µs
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
10-2
10-1
1
tp = 100 µs
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
PMZ370UNE
Product data sheet
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14 May 2014
Min
Typ
Max
Unit
[1]
-
305
360
K/W
[2]
-
150
175
K/W
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
Symbol
Parameter
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
Min
Typ
Max
Unit
-
-
40
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
017aaa109
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.25
0.33
0.2
0.1
0
10
10- 3
0.05
0.02
0.01
10- 2
10- 1
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ370UNE
Product data sheet
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.5
0.77
1.05
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 30 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
3
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
3
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
0.5
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
0.5
µA
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
-
370
490
mΩ
VGS = 4.5 V; ID = 500 mA; Tj = 150 °C
-
650
860
mΩ
VGS = 2.5 V; ID = 400 mA; Tj = 25 °C
-
470
750
mΩ
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C
-
630
1300
mΩ
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
1580
-
mS
total gate charge
VDS = 15 V; ID = 500 mA; VGS = 4.5 V;
-
0.77
1.16
nC
QGS
gate-source charge
Tj = 25 °C
-
0.15
-
nC
QGD
gate-drain charge
-
0.16
-
nC
Ciss
input capacitance
VDS = 25 V; f = 1 MHz; VGS = 0 V;
-
52
78
pF
Coss
output capacitance
Tj = 25 °C
-
9
-
pF
Crss
reverse transfer
capacitance
-
3
-
pF
td(on)
turn-on delay time
VDS = 15 V; RL = 250 Ω; VGS = 4.5 V;
-
11
22
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
9
-
ns
td(off)
turn-off delay time
-
54
108
ns
tf
fall time
-
27
-
ns
0.48
0.76
1.2
V
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMZ370UNE
Product data sheet
IS = 300 mA; VGS = 0 V; Tj = 25 °C
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
017aaa567
1.0
4.5 V
ID
(A)
2.5 V
2V
017aaa568
10-3
VGS = 1.8 V
ID
(A)
0.8
10-4
0.6
min
typ
max
1.5 V
0.4
10-5
0.2
1V
0
Fig. 6.
0
0.5
1.0
1.5
VDS (V)
10-6
2.0
0
0.25
0.50
0.75
1.00
1.25
VGS (V)
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
017aaa569
1.0
RDSon
(Ω)
017aaa570
3
VGS = 1.8 V
RDSon
(Ω)
0.8
2V
2
0.6
2.5 V
3V
0.4
1
4.5 V
Tj = 25 °C
0.2
Tj = 150 °C
0
0
0.2
0.4
0.6
0.8
ID (A)
0
1.0
Tj = 25 °C
Fig. 8.
Product data sheet
1
2
3
4
VGS (V)
5
ID = 500 mA
Drain-source on-state resistance as a function
of drain current; typical values
PMZ370UNE
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
017aaa571
1.2
017aaa572
2.0
a
ID
(A)
1.5
0.8
1.0
0.4
0.5
Tj = 150 °C
0
0
0.5
Tj = 25 °C
1.0
1.5
0
-60
2.0
2.5
VGS (V)
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
017aaa573
1.5
0
017aaa574
103
C
(pF)
VGS(th)
(V)
1.0
102
max
Ciss
typ
0.5
10
min
Coss
Crss
0
-60
0
60
120
Tj (°C)
1
10-1
180
ID = 0.25 mA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMZ370UNE
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
017aaa575
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
017aaa137
0
0
0.2
0.4
0.6
Fig. 15. Gate charge waveform definitions
0.8
1.0
QG (nC)
ID = 0.5 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa576
1.0
IS
(A)
0.8
0.6
0.4
0.2
0
Tj = 150 °C
0
0.2
0.4
Tj = 25 °C
0.6
0.8
1.0
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMZ370UNE
Product data sheet
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NXP Semiconductors
30 V, N-channel Trench MOSFET
12. Package outline
0.62
0.55
0.55
0.47
0.50
0.46
3
0.30
0.22
0.65
0.30
0.22
2
0.20
0.12
1.02
0.95
1
0.35
Dimensions in mm
03-04-03
Fig. 18. Package outline DFN1006-3 (SOT883)
13. Soldering
1.3
0.7
R0.05 (12×)
solder lands
0.9
0.6
0.7
solder resist
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.3
0.4
(2×)
0.4
Dimensions in mm
sot883_fr
Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883)
PMZ370UNE
Product data sheet
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30 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMZ370UNE v.1
20140514
Product data sheet
-
-
PMZ370UNE
Product data sheet
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PMZ370UNE
NXP Semiconductors
30 V, N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMZ370UNE
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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30 V, N-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
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liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMZ370UNE
Product data sheet
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NXP Semiconductors
30 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 10
14
Revision history ................................................... 11
15
15.1
15.2
15.3
15.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 May 2014
PMZ370UNE
Product data sheet
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14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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