SO T8 83 PMZ550UNE 30 V, N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -8 - 8 V ID drain current - - 590 mA - 550 670 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 590 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 1 2 S source 2 3 D drain Graphic symbol D 3 Transparent top view G DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number PMZ550UNE Package Name Description Version DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ550UNE ZK PMZ550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 590 mA VGS = 4.5 V; Tamb = 100 °C [1] - 370 mA - 2.3 A [2] - 310 mW [1] - 400 mW - 1670 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 380 mA Source-drain diode IS source current Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMZ550UNE Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 25 March 2015 25 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-017176 10 ID (A) Limit RDSon = VDS/ID tp = 10 µs 1 tp = 100 µs 10-1 tp = 1 ms DC; Tsp = 25 °C tp = 10 ms tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-3 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMZ550UNE Product data sheet Min Typ Max Unit [1] - 350 405 K/W [2] - 270 310 K/W - 65 75 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-015213 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 102 0.33 0.25 0.20 0.10 0.05 0.01 0 0.02 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-015215 103 Zth(j-a) (K/W) duty cycle = 1 102 0.50 0.25 0.75 0.33 0.20 0.10 0.05 0.02 0.01 0 10 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZ550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 4.5 V; ID = 590 mA; Tj = 25 °C - 550 670 mΩ VGS = 4.5 V; ID = 590 mA; Tj = 150 °C - 960 1170 mΩ VGS = 2.5 V; ID = 590 mA; Tj = 25 °C - 660 900 mΩ VGS = 1.8 V; ID = 80 mA; Tj = 25 °C - 770 1120 mΩ VGS = 1.5 V; ID = 10 mA; Tj = 25 °C - 890 1500 mΩ VDS = 10 V; ID = 590 mA; Tj = 25 °C - 600 - mS total gate charge VDS = 15 V; ID = 590 mA; VGS = 4.5 V; - 0.6 1.1 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 30.3 - pF Coss output capacitance Tj = 25 °C - 5.8 - pF Crss reverse transfer capacitance - 4.2 - pF td(on) turn-on delay time VDS = 15 V; ID = 590 mA; VGS = 4.5 V; - 4 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 7 - ns td(off) turn-off delay time - 12 - ns tf fall time - 3 - ns - 0.86 1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMZ550UNE Product data sheet IS = 380 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-017177 3 VGS = 4.5 V ID (A) ID (A) 3.0 V 2.5 V 2 aaa-017178 10-3 10-4 2.0 V 1.8 V (1) 10-5 1 (2) (3) 1.5 V 1.2 V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 0.5 1 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. aaa-017179 2.0 1.2 V RDSon (Ω) 1.8 V 1.5 V aaa-017180 RDSon (Ω) 3.0 V 1.5 1.5 1.0 1.0 Tj = 150 °C VGS = 4.5 V 0.5 0 1 2 ID (A) 0 3 Tj = 25 °C Fig. 8. Tj = 25 °C 0.5 0 Product data sheet 0 1 2 3 4 VGS (V) 5 ID = 1 A Drain-source on-state resistance as a function of drain current; typical values PMZ550UNE 1.5 Sub-threshold drain current as a function of gate-source voltage 2.0 2.5 V 2.0 V VGS (V) Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-017181 1.0 aaa-017182 2.0 ID (A) a 0.8 1.5 0.6 0.4 0.5 0.2 0 1.0 Tj = 150 °C Tj = 25 °C 0 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 C (pF) 1.0 (1) (1) 10 (2) 0.5 0 -60 (2) (3) 0 60 (3) 120 Tj (°C) 1 10-1 180 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet 10 VDS (V) 102 (2) Coss (3) Crss Fig. 12. Gate-source threshold voltage as a function of junction temperature PMZ550UNE 180 aaa-017184 102 VGS(th) (V) Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-017183 1.5 0 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-017185 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 0.6 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-017186 2.0 IS (A) 1.5 1.0 Tj = 150 °C 0.5 Tj = 25 °C 0 0 0.4 0.8 1.2 VSD (V) 1.6 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMZ550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET 12. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION REFERENCES IEC JEDEC SOT883 JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Fig. 18. Package outline DFN1006-3 (SOT883) PMZ550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET 13. Soldering 1.3 0.7 R0.05 (12×) solder lands 0.9 0.6 0.7 solder resist solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883) PMZ550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZ550UNE v.1 20150325 Product data sheet - - PMZ550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PMZ550UNE NXP Semiconductors 30 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 March 2015 PMZ550UNE Product data sheet All information provided in this document is subject to legal disclaimers. 25 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15