Data Sheet

DF
N
20
20
MD
-6
NX2020P1
30 V, single P-channel Trench MOSFET
22 January 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
•
•
•
•
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
•
•
•
•
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-30
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
-5
A
-
47
58
mΩ
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = -4.5 V; ID = -4 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
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NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
Graphic symbol
D
6
7
2
3
8
5
4
Transparent top view
G
S
017aaa257
DFN2020MD-6 (SOT1220)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
NX2020P1
Description
Version
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
SOT1220
7. Marking
Table 4.
Marking codes
Type number
Marking code
NX2020P1
2E
NX2020P1
Product data sheet
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30 V, single P-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-30
V
VGS
gate-source voltage
-12
12
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-5
A
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-4
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-2.5
A
-
-16
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[1]
-
1.7
W
Tamb = 25 °C; t ≤ 5 s
[1]
-
3.5
W
-
12.5
W
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-1.9
A
Source-drain diode
IS
source current
[1]
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2
drain 6 cm .
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
NX2020P1
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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25
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NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
017aaa885
-102
Limit RDSon = VDS/ID
ID
(A)
tp = 10 µs
-10
tp = 100 µs
tp = 1 ms
-1
tp = 10 ms
DC; Tsp = 25 °C
-10-1
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
-10-2
-10-2
-10-1
-1
-10
-102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
NX2020P1
Product data sheet
Min
Typ
Max
Unit
[1]
-
235
270
K/W
[2]
-
67
74
K/W
[2]
-
33
36
K/W
-
5
10
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
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NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
017aaa542
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
10
0.05
0.01
0.02
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
10
0.2
0.5
0.25
0.1
0.05
0
1
10-3
0.02
0.01
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX2020P1
Product data sheet
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30 V, single P-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-30
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.47
-0.68
-0.9
V
IDSS
drain leakage current
VDS = -30 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
IGSS
gate leakage current
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -4.5 V; ID = -4 A; Tj = 25 °C
-
47
58
mΩ
VGS = -4.5 V; ID = -4 A; Tj = 150 °C
-
72
88
mΩ
VGS = -2.5 V; ID = -3 A; Tj = 25 °C
-
54
71
mΩ
VGS = -1.8 V; ID = -2.1 A; Tj = 25 °C
-
74
107
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = -10 V; ID = -4 A; Tj = 25 °C
-
20
-
S
RG
gate resistance
f = 1 MHz
-
5.1
-
Ω
total gate charge
VDS = -15 V; ID = -4 A; VGS = -4.5 V;
-
14
21
nC
QGS
gate-source charge
Tj = 25 °C
-
2.5
-
nC
QGD
gate-drain charge
-
4
-
nC
Ciss
input capacitance
VDS = -15 V; f = 1 MHz; VGS = 0 V;
-
1365
-
pF
Coss
output capacitance
Tj = 25 °C
-
105
-
pF
Crss
reverse transfer
capacitance
-
90
-
pF
td(on)
turn-on delay time
VDS = -15 V; ID = -4 A; VGS = -4.5 V;
-
15
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
33
-
ns
td(off)
turn-off delay time
-
28
-
ns
tf
fall time
-
20
-
ns
-
-0.7
-1.2
V
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
NX2020P1
Product data sheet
IS = -1.9 A; VGS = 0 V; Tj = 25 °C
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NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
017aaa886
-12
-4.5 V
-2.5 V
ID
(A)
017aaa887
-10-2
-2 V
ID
(A)
-1.9 V
-10-3
-1.8 V
-8
-10-4
-1.7 V
max
-10-5
VGS = -1.5 V
Fig. 6.
typ
-1.6 V
-4
0
min
0
-1
-2
-3
-10-6
-4
VDS (V)
0
-0.4
-0.8
VGS (V)
-1.2
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
017aaa888
0.20
-1.5 V
RDSon
(Ω)
-1.7 V
-1.6 V
-1.8 V
017aaa889
0.20
-1.9 V
RDSon
(Ω)
-2 V
0.16
0.15
0.12
0.10
0.08
-2.5 V
0.04
VGS = -4.5 V
0
0
-4
-8
ID (A)
Tj = 150 °C
0.05
0
-12
Tj = 25 °C
Fig. 8.
Product data sheet
0
-1
-2
-3
-4
VGS (V)
-5
ID = -3 A
Drain-source on-state resistance as a function
of drain current; typical values
NX2020P1
Tj = 25 °C
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
30 V, single P-channel Trench MOSFET
017aaa890
-14
ID
(A)
-12
017aaa891
1.6
a
1.4
-10
1.2
-8
-6
1.0
-4
Tj = 150 °C
-2
0
0
-0.5
-1.0
0.8
Tj = 25 °C
-1.5
VGS (V)
0.6
-60
-2.0
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa892
-1.2
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
017aaa893
104
C
(pF)
VGS(th)
(V)
max
-0.8
Ciss
103
typ
min
-0.4
Coss
102
Crss
0
-60
0
60
120
Tj (°C)
10
-10-1
180
ID = -0.25 mA; VDS = VGS
Product data sheet
-10
VDS (V)
-102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
NX2020P1
-1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
017aaa894
-4.5
VDS
VGS
(V)
ID
-3.0
VGS(pl)
VGS(th)
VGS
-1.5
QGS1
QGS2
QGS
QGD
QG(tot)
017aaa137
0
0
3
6
9
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
12
15
QG (nC)
ID = -3 A; VDS = -15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa895
-3
IS
(A)
-2
-1
Tj = 150 °C
0
0
-0.2
-0.4
Tj = 25 °C
-0.6
-0.8
-1.0
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
NX2020P1
Product data sheet
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NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
E
A
X
D
A
A1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
Lp
E2
J1
D2 3
4
2
5
e
J
bp (6×)
D1
e
1
v
E1
0
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A1
bp
min
0.25
nom
max 0.65 0.04 0.35
D
D1
D2
E
E1
E2
1.9
1.0
0.2
1.9
1.1
0.51
2.1
1.2
0.3
2.1
1.3
0.61
e
J
J1
0.65 0.27 0.64
Lp
0.2
0.3
v
y
y1
0.1
0.05
0.1
Note
1. Dimension A is including plating thickness.
Outline
version
A B
6
pin 1
index area
mm
y
y1 C
sot1220_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
12-04-23
12-04-30
SOT1220
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
NX2020P1
Product data sheet
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NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
NX2020P1
Product data sheet
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30 V, single P-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
NX2020P1 v.1
20140122
Product data sheet
-
-
NX2020P1
Product data sheet
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NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
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is deemed to offer functions and qualities beyond those described in the
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NX2020P1
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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NXP Semiconductors
30 V, single P-channel Trench MOSFET
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use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NX2020P1
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 January 2014
© NXP N.V. 2014. All rights reserved
14 / 15
NX2020P1
NXP Semiconductors
30 V, single P-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 January 2014
NX2020P1
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 January 2014
© NXP N.V. 2014. All rights reserved
15 / 15