MB2M, MB4M & MB6M Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL recognition, file number E54214 ~ ~ • Ideal for printed circuit boards • Applicable for automative insertion • High surge current capability • Recommended for non-automotive applications ~ • Solder dip 260 °C, 40 s ~ • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication applications. Case Style MBM IF(AV) 0.5 A VRRM 200 V, 400 V, 600 V IFSM 35 A IR 5 µA VF 1.0 V TJ max. 150 °C MECHANICAL DATA Case: MBM Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB2M 2 4 6 Maximum repetitive peak reverse voltage VRRM 200 400 600 V Maximum RMS voltage VRMS 140 280 420 V VDC 200 400 600 V Device marking code Maximum DC blocking voltage Maximum average forward output rectified current (Fig. 1) on glass-epoxy P.C.B. on aluminum substrate Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range MB4M MB6M UNIT 0.5 (1) IF(AV) 0.8 (2) A IFSM 35 A I2t 5.0 A2 s TJ, TSTG - 55 to + 150 °C Notes: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads (2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad Document Number: 88660 Revision: 01-Feb-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 MB2M, MB4M & MB6M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT Maximum instantaneous forward voltage drop per diode 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C TA = 125 °C IR 5.0 100 µA CJ 13 pF Typical junction capacitance per diode (1) Note: (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB2M MB4M UNIT 85 70 (2) 20 (1) RθJA RθJA RθJL Typical thermal resistance MB6M (1) °C/W Notes: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads (2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.22 45 100 Tube MB2M-E3/45 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 TA = 40 °C Single Half Sine-Wave Aluminum Substrate Peak Forward Surge Current (A) Average Forward Rectified Current (A) 0.8 0.7 0.6 0.5 Glass Epoxy P.C.B. 0.4 0.3 0.2 0.1 Resistive or Inductive Load 0 30 25 f = 50 Hz 20 f = 60 Hz 15 10 5 1.0 Cycle 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Figure 1. Derating Curve for Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88660 Revision: 01-Feb-08 MB2M, MB4M & MB6M Vishay General Semiconductor 30 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.3 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 25 20 15 10 5 0 0.5 1.1 0.9 0.7 1.3 1.5 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Forward Voltage Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode Instantaneous Reverse Leakage Current (µA) 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0 20 40 60 100 80 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style MBM 0.161 (4.10) 0.144 (3.65) 0.190 (4.83) 0.179 (4.55) 0.205 (5.21) 0.195 (4.95) 0.049 (1.24) 0.039 (0.99) 0.106 (2.70) 0.090 (2.30) 0.148 (3.75) 0.132 (3.35) 0.029 (0.74) 0.017 (0.43) Document Number: 88660 Revision: 01-Feb-08 0.105 (2.67) 0.095 (2.41) 10° to 15° 0.016 (0.41) 0.006 (0.15) 0.147 (3.73) 0.137 (3.48) 0.028 (0.71) 0.020 (0.51) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1