SO T2 3 BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 3 kV HBM 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 55 V VGS gate-source voltage -10 - 10 V ID drain current - - 210 mA VGS = 4.5 V; Tsp = 25 °C - - 335 mA VGS = 4.5 V; ID = 200 mA; Tj = 25 °C - 2.3 4 Ω VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number BSH111BK Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] BSH111BK %4T [1] BSH111BK Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 55 V VGS gate-source voltage -10 10 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 210 mA VGS = 4.5 V; Tamb = 100 °C [1] - 130 mA VGS = 4.5 V; Tsp = 25 °C - 335 mA - 0.85 A [2] - 302 mW [1] - 364 mW - 1449 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 200 mA Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature BSH111BK Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 26 November 2014 25 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET aaa-015680 1 (1) Limit RDSon = VDS/ID ID (A) (2) 10-1 (3) (4) (5) (6) 10-2 (7) 10-3 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 10 µs (2) tp = 100 µs (3) tp = 1 ms (4) tp = 10 ms (5) DC; Tsp = 25 °C (6) tp = 100 ms 2 (7) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] BSH111BK Product data sheet Min Typ Max Unit [1] - 351 404 K/W [2] - 271 311 K/W - 65 75 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET aaa-014128 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.50 102 0.33 0.25 0.20 0.10 0.05 0 0.01 0.02 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-014129 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.50 102 0.33 0.20 0.25 0.10 0.05 0 0.01 10 10-3 0.02 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSH111BK Product data sheet All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 55 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.6 1 1.3 V IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 0.3 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -0.3 µA VGS = 4.5 V; ID = 200 mA; Tj = 25 °C - 2.3 4 Ω VGS = 4.5 V; ID = 200 mA; Tj = 150 °C - 4.7 8.1 Ω VGS = 2.5 V; ID = 75 mA; Tj = 25 °C - 2.7 5 Ω VGS = 1.8 V; ID = 30 mA; Tj = 25 °C - 4.8 - Ω VDS = 10 V; ID = 200 mA; Tj = 25 °C - 0.64 - S RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge VDS = 30 V; ID = 200 mA; VGS = 4.5 V; - 0.5 - nC QGS gate-source charge Tj = 25 °C - 0.08 - nC QGD gate-drain charge - 0.16 - nC Ciss input capacitance VDS = 30 V; f = 1 MHz; VGS = 0 V; - 19.1 30 pF Coss output capacitance Tj = 25 °C - 2.7 10 pF Crss reverse transfer capacitance - 1.5 7 pF td(on) turn-on delay time VDS = 30 V; ID = 200 mA; VGS = 4.5 V; - 8.3 12 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 8.4 - ns td(off) turn-off delay time - 12.6 16 ns tf fall time - 4.8 - ns - 0.86 1.2 V Source-drain diode VSD source-drain voltage BSH111BK Product data sheet IS = 200 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET aaa-015681 0.8 VGS = 4.5 V ID (A) 0.6 aaa-015682 10-3 3.0 V ID (A) 2.6 V (3) (2) (1) 10-4 2.4 V 0.4 2.2 V 10-5 0.2 1.8 V 0 Fig. 6. 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. aaa-015683 10 1.8 V RDSon (Ω) 2V 2.2 V 8 2.0 aaa-015684 RDSon (Ω) 2.6 V 15 2.8 V 10 3V 4 VGS (V) Sub-threshold drain current as a function of gate-source voltage 20 2.4 V 6 1.5 VGS = 4.5 V (1) 5 2 (2) 0 Fig. 8. 0 0.2 0.4 0.6 ID (A) 0 0.8 0 2 Tj = 25 °C ID = 0.2 A Drain-source on-state resistance as a function of drain current; typical values (1) Tj = 150 °C Product data sheet 6 8 10 VGS (V) (2) Tj = 25 °C Fig. 9. BSH111BK 4 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET aaa-015685 0.6 aaa-015686 2.5 a ID (A) 2.0 0.4 1.5 (2) 1.0 0.2 0.5 (1) 0 0 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-015687 2.0 aaa-015688 102 VGS(th) (V) C (pF) 1.5 (1) (1) 1.0 (2) 0.5 (3) 10 (2) 0 -60 0 60 120 Tj (°C) 1 10-1 180 (3) 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) 102 (2) Coss (3) Crss Fig. 12. Gate-source threshold voltage as a function of junction temperature BSH111BK 10 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET aaa-015689 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 0.2 0.4 QG (nC) Fig. 15. MOSFET transistor: Gate charge waveform definitions 0.6 ID = 0.2 A; VDS = 30 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-015690 0.20 IS (A) 0.15 (1) 0.10 0.05 (2) 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16. Source current as a function of source-drain voltage; typical values BSH111BK Product data sheet All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition BSH111BK Product data sheet All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 HE 1.9 0.95 Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline TO-236AB (SOT23) BSH111BK Product data sheet All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) BSH111BK Product data sheet All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BSH111BK v.1 20141126 Product data sheet - - BSH111BK Product data sheet All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 16 BSH111BK NXP Semiconductors 55 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 November 2014 BSH111BK Product data sheet All information provided in this document is subject to legal disclaimers. 26 November 2014 © NXP Semiconductors N.V. 2014. All rights reserved 16 / 16