Data Sheet

83B
PMZB370UNE
SO
T8
30 V, single N-channel Trench MOSFET
Rev. 1 — 8 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 Ultra thin package profile with
0.37 mm height
 Low threshold voltage
 ESD protection up to 2 kV
1.3 Applications
 Relay driver
 Low-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
30
V
VGS
gate-source voltage
-8
-
8
V
-
-
900
mA
-
370
490
mΩ
drain current
ID
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
PMZB370UNE
NXP Semiconductors
30 V, single N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
S
source
1
3
D
drain
2
Graphic symbol
D
3
Transparent
top view
G
SOT883B (DFN1006B-3)
S
017aaa255
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMZB370UNE
DFN1006B-3
Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm
SOT883B
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMZB370UNE
0000 1000
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
PMZB370UNE
Product data sheet
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30 V, single N-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
30
V
VGS
gate-source voltage
drain current
ID
total power dissipation
Ptot
8
V
VGS = 4.5 V; Tamb = 25 °C
-
900
mA
VGS = 4.5 V; Tamb = 100 °C
[1]
-
560
mA
Tamb = 25 °C; single pulse; tp ≤ 10 µs
peak drain current
IDM
-8
[1]
Tamb = 25 °C
-
3.6
A
[2]
-
360
mW
[1]
-
715
mW
-
2700
mW
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
Source-drain diode
source current
IS
Tamb = 25 °C
[1]
-
680
mA
HBM
[3]
-
2000
V
ESD maximum rating
electrostatic discharge voltage
VESD
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Measured between all pins.
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
Fig 2.
017aaa124
120
−25
25
75
125
Normalized total power dissipation as a
function of junction temperature
PMZB370UNE
Product data sheet
0
−75
175
Tj (°C)
Fig 3.
−25
75
125
175
Tj (°C)
Normalized continuous drain current as a
function of junction temperature
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Rev. 1 — 8 May 2012
25
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PMZB370UNE
NXP Semiconductors
30 V, single N-channel Trench MOSFET
017aaa566
10
Limit RDSon = VDS/ID
ID
(A)
1
tp = 1 μs
10-1
DC; Tsp = 25 °C
tp = 10 μs
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
10-2
10-1
1
tp = 100 μs
102
10
VDS (V)
IDM = single pulse
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMZB370UNE
Product data sheet
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30 V, single N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
thermal resistance
from junction to
ambient
Rth(j-a)
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
305
360
K/W
[2]
-
150
175
K/W
-
-
40
K/W
thermal resistance
from junction to solder
point
Rth(j-sp)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa109
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.25
0.2
0.1
0.05
0
0.02
0.01
10
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.25
0.33
0.2
0.1
0
10
10−3
0.05
0.02
0.01
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 6.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB370UNE
Product data sheet
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30 V, single N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.5
0.77
1.05
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 30 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
3
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
3
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
0.5
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
0.5
µA
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
-
370
490
mΩ
VGS = 4.5 V; ID = 500 mA; Tj = 150 °C
-
650
860
mΩ
VGS = 2.5 V; ID = 400 mA; Tj = 25 °C
-
470
750
mΩ
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C
-
630
1300
mΩ
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
1580
-
mS
VDS = 15 V; ID = 500 mA; VGS = 4.5 V;
Tj = 25 °C
-
0.77
1.16
nC
-
0.15
-
nC
-
0.16
-
nC
-
52
78
pF
-
9
-
pF
-
3
-
pF
-
11
22
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
VDS = 25 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; RL = 250 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
tr
rise time
-
9
-
ns
td(off)
turn-off delay time
-
54
108
ns
tf
fall time
-
27
-
ns
0.48
0.76
1.2
V
Source-drain diode
VSD
source-drain voltage
PMZB370UNE
Product data sheet
IS = 300 mA; VGS = 0 V; Tj = 25 °C
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NXP Semiconductors
30 V, single N-channel Trench MOSFET
017aaa567
1.0
4.5 V
ID
(A)
2.5 V
017aaa568
10-3
2V
VGS = 1.8 V
ID
(A)
0.8
10-4
0.6
min
typ
max
1.5 V
0.4
10-5
0.2
1V
10-6
0
0
0.5
1.0
1.5
0
2.0
0.25
0.50
0.75
VDS (V)
Tj = 25 °C
Fig 7.
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa569
1.0
RDSon
(Ω)
1.00
1.25
VGS (V)
Fig 8.
Sub-threshold drain current as a function of
gate-source voltage
017aaa570
3
VGS = 1.8 V
RDSon
(Ω)
0.8
2V
2
0.6
2.5 V
3V
0.4
1
4.5 V
Tj = 25 °C
0.2
Tj = 150 °C
0
0
0
0.2
0.4
0.6
0.8
1.0
0
1
ID (A)
Product data sheet
4
5
ID = 500 mA
Drain-source on-state resistance as a function
of drain current; typical values
PMZB370UNE
3
VGS (V)
Tj = 25 °C
Fig 9.
2
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
30 V, single N-channel Trench MOSFET
017aaa571
1.2
017aaa572
2.0
a
ID
(A)
1.5
0.8
1.0
0.4
0.5
Tj = 25 °C
Tj = 150 °C
0
-60
0
0
0.5
1.0
1.5
2.0
2.5
VGS (V)
0
60
120
180
Tj (°C)
VDS > ID × RDSon
Fig 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa573
1.5
Fig 12. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa574
103
C
(pF)
VGS(th)
(V)
1.0
102
max
Ciss
typ
0.5
10
min
Coss
Crss
0
-60
0
60
120
180
1
10-1
1
Tj (°C)
VDS (V)
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig 13. Gate-source threshold voltage as a function of
junction temperature
PMZB370UNE
Product data sheet
102
10
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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30 V, single N-channel Trench MOSFET
017aaa575
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
017aaa137
0
0
0.2
0.4
0.6
0.8
1.0
QG (nC)
ID = 0.5 A; VDS = 15 V; Tamb = 25 °C
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Gate charge waveform definitions
017aaa576
1.0
IS
(A)
0.8
0.6
0.4
0.2
Tj = 25 °C
Tj = 150 °C
0
0
0.2
0.4
0.6
0.8
1.0
VSD (V)
VGS = 0 V
Fig 17. Source current as a function of source-drain voltage; typical values
PMZB370UNE
Product data sheet
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30 V, single N-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 18. Duty cycle definition
9. Package outline
0.65
0.55
0.40
0.34
0.35
0.20
0.12
1
0.04 max
2
0.30
0.22
1.05
0.65
0.95
0.30
0.22
3
0.55
0.47
Dimensions in mm
11-11-02
Fig 19. Package outline SOT883B (DFN1006B-3)
PMZB370UNE
Product data sheet
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30 V, single N-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3)
PMZB370UNE
Product data sheet
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11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMZB370UNE v.1
20120508
Product data sheet
-
-
PMZB370UNE
Product data sheet
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Rev. 1 — 8 May 2012
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12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PMZB370UNE
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
PMZB370UNE
Product data sheet
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14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information . . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 May 2012
Document identifier: PMZB370UNE