Data Sheet

PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Rev. 02 — 1 March 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
1.3 Applications
„ DC-to-DC converters
„ Motor control
„ Load switching
„ Server power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
-
-
32
A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
86
W
Tj
junction temperature
-55
-
175
°C
VGS = 10 V; Tj(init) = 25 °C;
ID = 32 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω
-
-
42
mJ
VGS = 10 V; ID = 15 A;
VDS = 50 V; see Figure 12
and 13
-
6.9
-
nC
-
23.8
-
nC
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 11
-
-
62
mΩ
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 16
-
29.3
34.5
mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Static characteristics
RDSon
drain-source
on-state resistance
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
1
G
gate
2
D
drain
Simplified outline
Graphic symbol
D
mb
3
S
source
mb
D
mounting base; connected to
drain
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
PSMN034-100PS
PSMN034-100PS_2
Objective data sheet
Package
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
2 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
ID
drain current
-20
20
V
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
22
A
VGS = 10 V; Tmb = 25 °C; see Figure 1
-
32
A
-
127
A
IDM
peak drain current
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
86
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering
temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
32
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
127
A
-
42
mJ
Avalanche ruggedness
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A; Vsup ≤ 100 V;
drain-source avalanche unclamped; RGS = 50 Ω
energy
EDS(AL)S
003aae103
40
ID
(A)
03aa16
120
Pder
(%)
30
80
20
40
10
0
0
0
Fig 1.
50
100
150
T mb( ° C)
200
Objective data sheet
50
100
150
200
Tmb (°C)
Continuous drain current as a function of
mounting base temperature
PSMN034-100PS_2
0
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
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Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
3 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
003aae104
103
ID
(A)
Limit RDSon = VDS / ID
102
tp =10 μ s
10
100 μ s
1
1 ms
10 ms
100 ms
DC
10-1
1
102
10
103
V DS(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN034-100PS_2
Objective data sheet
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Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
see Figure 4
-
0.9
1.7
K/W
Rth(j-a)
thermal resistance from junction to ambient vertical in free air
-
50
-
K/W
003aae105
1
d = 0.5
Z th(j-mb)
(K/W)
0.2
0.1
10-1
0.05
P
=
0.02
tp
T
single shot
t
tp
T
10-2
1e-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
t p (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN034-100PS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
90
-
-
V
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
100
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9
1
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10
and 9
2
3
4
V
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9
and 10
-
-
4.8
V
VDS = 100 V; VGS = 0 V; Tj = 125 °C
-
-
50
µA
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.02
1
µA
IDSS
IGSS
RDSon
RG
drain leakage current
gate leakage current
drain-source on-state
resistance
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 11
-
-
62
mΩ
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 11
-
82.1
96
mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 16
-
29.3
34.5
mΩ
-
1
-
Ω
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 12 and 13
-
23.8
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
19
-
nC
QGS
gate-source charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 12 and 13
-
5.5
-
nC
QGS(th)
pre-threshold
gate-source charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 12
-
3.6
-
nC
QGS(th-pl)
post-threshold
gate-source charge
-
1.9
-
nC
QGD
gate-drain charge
ID = 15 A; VDS = 50 V; VGS = 10 V;
see Figure 12 and 13
-
6.9
-
nC
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 12 and 13
-
4.4
-
V
Ciss
input capacitance
-
1201
-
pF
Coss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 14
-
94
-
pF
Crss
reverse transfer
capacitance
-
61
-
pF
td(on)
turn-on delay time
-
12
-
ns
tr
rise time
-
10
-
ns
td(off)
turn-off delay time
-
28
-
ns
tf
fall time
-
9
-
ns
PSMN034-100PS_2
Objective data sheet
VDS = 50 V; RL = 3.3 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
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Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
6 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Table 6.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 15 A; VGS = 0 V; Tj = 25 °C; see Figure 17
-
0.85
1.2
V
trr
reverse recovery time
-
38
-
ns
Qr
recovered charge
IS = 5 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 50 V
-
59
-
nC
003aae110
50
g fs
(S)
003aae109
2000
Ciss
C
(pF)
40
1500
Crss
30
1000
20
500
10
0
0
0
10
20
30
0
40
I D (A)
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
003aae111
100
R DSon
(mΩ)
4
8
Input and reverse capacitances as a function of
gate-source voltage; typical values
003aae106
40
I
D
(A)
80
12
V GS(V)
10.0
30
6.5
5.5
5.0
4.7
60
20
4.5
40
10
VGS (V) = 4
0
20
0
5
10
15
20
0
1
V GS(V)
Fig 7.
Objective data sheet
3
4
5
V DS(V)
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN034-100PS_2
2
Fig 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
7 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
003aad280
5
ID
(A)
VGS(th)
(V)
4
max
10−4
min
10−5
1
0
−60
typ
10−3
typ
2
min
10−2
max
3
Fig 9.
03aa35
10−1
10−6
0
60
120
180
0
2
4
Tj (°C)
6
VGS (V)
Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aad774
3.2
VDS
a
ID
2.4
VGS(pl)
VGS(th)
1.6
VGS
QGS1
0.8
QGS2
QGS
QGD
QG(tot)
003aaa508
0
-60
0
60
120
Tj (°C)
180
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN034-100PS_2
Objective data sheet
Fig 12. Gate charge waveform definitions
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
8 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
003aae113
12
003aae112
104
V GS
(V)
C
(pF)
10
8
Ciss
103
20 V
6
VDS = 50 V
102
4
Coss
Crss
2
0
0
10
20
30
10
10-1
1
V DS(V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
003aae107
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
25
140
RDSon
(m )
120
20
100
15
80
10
60
30
102
10
Q G (nC)
I
D
(A)
003aae108
VGS (V) = 4.5
4.7
5.0
5
40
Tj = 175 C
5.5
6.5
10.0
Tj = 25 C
0
0
1
2
3
4
VGS(V)
5
Fig 15. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN034-100PS_2
Objective data sheet
20
0
10
20
30
ID (A)
40
Fig 16. Drain-source on-state resistance as a function
of drain current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
9 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
003aae114
40
IS
(A)
30
20
10
Tj = 175 °C
Tj = 25 °C
0
0
0.25
0.5
0.75
V SD(V)
1
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN034-100PS_2
Objective data sheet
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Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
10 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig 18. Package outline SOT78 (TO-220AB)
PSMN034-100PS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
11 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN034-100PS_2
20100301
Objective data sheet
-
PSMN034-100PS_1
-
-
Modifications:
PSMN034-100PS_1
PSMN034-100PS_2
Objective data sheet
•
Various changes to content.
20100218
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
12 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PSMN034-100PS_2
Objective data sheet
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
13 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN034-100PS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
14 of 15
PSMN034-100PS
NXP Semiconductors
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 March 2010
Document identifier: PSMN034-100PS_2