Data Sheet

PMGD780SN
Dual N-channel μTrenchMOS standard level FET
Rev. 02 — 19 April 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
1.2 Features and benefits
„ Surface-mounted package
„ Standard level threshold voltage
„ Low on-state resistance
„ Footprint 40 % smaller than SOT23
„ Fast switching
„ Dual device
1.3 Applications
„ Driver circuits
„ Switching in portable appliances
1.4 Quick reference data
„ VDS ≤ 60 V
„ Ptot ≤ 0.41 W
„ ID ≤ 0.49 A
„ RDSon ≤ 920 mΩ
2. Pinning information
Table 1.
Pinning - SOT363 (SC-88), simplified outline and symbol
Pin
Description
1
source1 (S1)
2
gate1 (G1)
3
drain2 (D2)
4
source2 (S2)
5
gate2 (G2)
6
drain1 (D1)
Simplified outline
Graphic symbol
6
5
4
D1
1
2
3
SOT363 (SC-88)
S1
D2
G1
S2
G2
msd901
PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
PMGD780SN
Package
Name
Description
Version
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
60
V
VDGR
drain-gate voltage
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
60
V
VGS
gate-source voltage
drain current
ID
-
±20
V
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
[1]
-
0.49
A
Tsp = 100 °C; VGS = 10 V; Figure 2
[1]
-
0.31
A
[1]
-
0.99
A
-
0.41
W
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 μs; Figure 3
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−55
+150
°C
Source-drain diode
IS
ISM
[1]
source current
Tsp = 25 °C
[1]
-
0.34
A
peak source current
Tsp = 25 °C; pulsed; tp ≤ 10 μs
[1]
-
0.69
A
Single device conducting.
PMGD780SN_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
2 of 14
PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
03aa17
120
Pder
(%)
03aa25
120
Ider
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
Tsp (°C)
200
Tsp (°C)
P tot
Pder = ----------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
Fig 1.
150
D ( 25 C )
Normalized total power dissipation as a
function of solder point temperature
Fig 2.
Normalized continuous drain current as a
function of solder point temperature
03an22
10
ID
(A)
tp = 10 μ s
Limit RDSon = VDS / ID
1
100 μ s
10-1
1 ms
DC
10 ms
100 ms
10-2
10-3
10-1
1
102
10
VDS (V)
Tsp = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMGD780SN_2
Product data sheet
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Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol Parameter
thermal resistance from junction to solder point
Rth(j-sp)
Conditions
Min
Typ
Max
Unit
Figure 4
-
-
300
K/W
03an28
103
Zth(j-sp)
(K/W)
δ = 0.5
102
0.2
0.1
0.05
0.02
10
single pulse
P
δ=
tp
T
t
tp
T
1
10-4
Fig 4.
10-3
10-2
10-1
1
tp (s)
10
Transient thermal impedance from junction to solder point as a function of pulse duration
PMGD780SN_2
Product data sheet
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Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
60
-
-
V
Tj = −55 °C
55
-
-
V
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
ID = 250 μA; VGS = 0 V
ID = 0.25 mA; VDS = VGS; Figure 9
drain leakage current
Tj = 25 °C
1
2
2.5
V
Tj = 150 °C
0.6
−
−
V
Tj = −55 °C
−
−
3.5
V
Tj = 25 °C
-
0.05
1
μA
Tj = 150 °C
-
-
100
μA
-
10
100
nA
Tj = 25 °C
-
780
920
mΩ
Tj = 150 °C
-
1445 1700 mΩ
-
1100 1400 mΩ
VDS = 60 V; VGS = 0 V
IGSS
gate leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.3 A; Figure 7 and 8
VGS = 4.5 V; ID = 0.075 A; Figure 7 and 8
Dynamic characteristics
QG(tot)
total gate charge
-
1.05
-
nC
QGS
gate-source charge
ID = 1 A; VDD = 30 V; VGS = 10 V; Figure 13
-
0.2
-
nC
QGD
gate-drain charge
-
0.22
-
nC
Ciss
input capacitance
-
23
-
pF
VGS = 0 V; VDS = 30 V; f = 1 MHz; Figure 11
Coss
output capacitance
-
5
-
pF
Crss
reverse transfer capacitance
-
3.5
-
pF
td(on)
turn-on delay time
-
2
-
ns
tr
rise time
-
4
-
ns
td(off)
turn-off delay time
-
5
-
ns
tf
fall time
-
2.2
-
ns
-
0.83
1.2
V
VDD = 30 V; RL = 30 Ω; VGS = 10 V; RG = 6 Ω
Source-drain diode
VSD
source-drain voltage
PMGD780SN_2
Product data sheet
IS = 0.3 A; VGS = 0 V; Figure 12
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
03an88
2
ID
(A)
03an90
1
10
ID
(A)
6
0.8
1.5
5
0.6
4.5
1
0.4
4
Tj = 150 °C
0.5
25 °C
0.2
3.5
VGS (V) = 3
0
0
0
1
2
0
3
VDS (V)
Tj = 25 °C
Fig 5.
1
2
3
4
VGS (V)
5
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 6.
03an89
3
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03aa28
2.4
4
VGS (V) = 3.5
a
RDSon
(Ω)
4.5
1.8
2
1.2
5
6
10
1
0.6
0
−60
0
0
0.2
0.4
0.6
0.8
ID (A)
1
Tj = 25 °C
Fig 7.
Product data sheet
60
120
180
Tj (°C)
RDSon
a = ----------------------------R DSon ( 25 °C )
Drain-source on-state resistance as a function
of drain current; typical values
PMGD780SN_2
0
Fig 8.
Normalized drain-source on-state resistance
as a function of junction temperature
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Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
03aa34
2.4
VGS(th)
(V)
03an32
10-3
ID
(A)
10-4
typ
1.8
10-5
1.2
min
min
10-6
typ
0.6
1E-7
0
−60
1E-8
0
60
120
180
0
1
1.5
2
VGS (V)
2.5
Tj = 25 °C; VDS = 5 V
ID = 0.25 mA; VDS = VGS
Fig 9.
0.5
Tj (°C)
Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03an92
102
C
(pF)
Ciss
10
Coss
Crss
1
10-1
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PMGD780SN_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
03an91
1
03an93
10
VGS = 0 V
IS
(A)
ID = 1 A
Tj = 25 °C
VDS = 30 V
VGS
(V)
0.8
8
0.6
6
0.4
4
150 °C
Tj = 25 °C
0.2
2
0
0
0
0.3
0.6
0.9
VSD (V)
1.2
Tj = 25 °C and 150 °C; VGS = 0 V
Product data sheet
0.3
0.6
0.9
QG (nC)
1.2
ID = 1 A; VDD = 30 V
Fig 12. Source current as a function of source-drain
voltage; typical values
PMGD780SN_2
0
Fig 13. Gate-source voltage as a function of gate
charge; typical values
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Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
7. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
JEITA
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
Fig 14. Package outline SOT363 (SC-88)
PMGD780SN_2
Product data sheet
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Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
8. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
0.6
(4×)
occupied area
Dimensions in mm
1.8
sot363_fr
Fig 15. Reflow soldering footprint SOT363 (SC-88)
PMGD780SN_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMGD780SN_2
20100419
Product data sheet
-
PMGD780SN_1
Modifications:
PMGD780SN_1
PMGD780SN_2
Product data sheet
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Table 5 “Characteristics”: added VGS(th) maximum value at condition Tj = 25 °C
Section 10 “Legal information”: updated
20040211
Product data
-
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2010
-
© NXP B.V. 2010. All rights reserved.
11 of 14
PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
PMGD780SN_2
Product data sheet
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
12 of 14
PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMGD780SN_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
13 of 14
PMGD780SN
NXP Semiconductors
Dual N-channel μTrenchMOS standard level FET
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 19 April 2010
Document identifier: PMGD780SN_2