Data Sheet

SO
T2
3
NX7002AK
60 V, single N-channel Trench MOSFET
6 August 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
Very fast switching
Trench MOSFET technology
ESD protected
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
60
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
300
mA
-
-
190
mA
-
3
4.5
Ω
VGS = 10 V; Tsp = 25 °C
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 10 V; ID = 100 mA; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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NX7002AK
NXP Semiconductors
60 V, single N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
3
D
G
1
2
TO-236AB (SOT23)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
NX7002AK
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
NX7002AK
%CM
[1]
NX7002AK
Product data sheet
% = placeholder for manufacturing site code
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
-
300
mA
VGS = 10 V; Tsp = 25 °C
VGS = 10 V; Tamb = 25 °C
[1]
-
190
mA
VGS = 10 V; Tamb = 100 °C
[1]
-
120
mA
-
760
mA
[2]
-
265
mW
[1]
-
325
mW
-
1330
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
190
mA
Source-drain diode
IS
source current
[1]
[2]
Tamb = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
120
Pder
(%)
017aaa124
120
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
[1]
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
NX7002AK
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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NX7002AK
NXP Semiconductors
60 V, single N-channel Trench MOSFET
017aaa466
1
Limit RDSon = VDS/ID
ID
(A)
(1)
10-1
(2)
(3)
(4)
(5)
10-2
(6)
10-3
10-1
1
10
102
VDS (V)
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
2
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
NX7002AK
Product data sheet
Min
Typ
Max
Unit
[1]
-
410
470
K/W
[2]
-
330
380
K/W
-
-
95
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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NX7002AK
NXP Semiconductors
60 V, single N-channel Trench MOSFET
017aaa467
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
102
0.33
0.2
0.05
10
0.01
0.5
0.25
0.1
0.02
0
1
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa468
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
102
0.33
0.2
0.05
10
0.01
0.5
0.25
0.1
0.02
0
1
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
10-1
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX7002AK
Product data sheet
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60 V, single N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
1.1
1.6
2.1
V
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 60 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
2
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-2
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
-
0.5
µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
-0.5
µA
VGS = 5 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -5 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 10 V; ID = 100 mA; Tj = 25 °C
-
3
4.5
Ω
VGS = 10 V; ID = 100 mA; Tj = 150 °C
-
6.2
9.2
Ω
VGS = 5 V; ID = 100 mA; Tj = 25 °C
-
3.7
5.2
Ω
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
500
-
mS
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
VDS = 30 V; ID = 200 mA; VGS = 4.5 V;
-
0.33
0.43
nC
QGS
gate-source charge
Tj = 25 °C
-
0.12
-
nC
QGD
gate-drain charge
-
0.09
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
15
20
pF
Coss
output capacitance
Tj = 25 °C
-
3.4
-
pF
Crss
reverse transfer
capacitance
-
2
-
pF
td(on)
turn-on delay time
VDS = 40 V; RL = 250 Ω; VGS = 10 V;
-
6
12
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
7
-
ns
td(off)
turn-off delay time
-
11
20
ns
tf
fall time
-
5
-
ns
0.47
0.8
1.2
V
Source-drain diode
VSD
source-drain voltage
NX7002AK
Product data sheet
IS = 115 mA; VGS = 0 V; Tj = 25 °C
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NX7002AK
NXP Semiconductors
60 V, single N-channel Trench MOSFET
017aaa469
0.20
ID
(A)
ID
(A)
4.5 V
0.15
017aaa470
10-3
10 V
3.0 V
10-4
2.3 V
2.5 V
(1)
(2)
(3)
0.10
10-5
VGS = 2.0 V
0.05
0
Fig. 6.
0
1
2
3
VDS (V)
10-6
4
0
1
2
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7.
017aaa471
10
RDSon
(Ω)
2.0 V
8
3
Sub-threshold drain current as a function of
gate-source voltage
017aaa472
12
2.5 V
2.3 V
VGS (V)
RDSon
8
6
(1)
3.0 V
4
4
4.5 V
2
0
Fig. 8.
(2)
10.0 V
0
0.05
0.10
0.15
ID (A)
0
0.20
0
2
Tj = 25 °C
ID = 0.2 A
Drain-source on-state resistance as a function
of drain current; typical values
(1) Tj = 150 °C
Product data sheet
6
8
10
VGS (V)
(2) Tj = 25 °C
Fig. 9.
NX7002AK
4
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NX7002AK
NXP Semiconductors
60 V, single N-channel Trench MOSFET
017aaa473
0.20
ID
(A)
017aaa474
2.0
a
(2)
0.15
1.5
0.10
1.0
0.05
0.5
(1)
0
0
1
2
3
4
VGS (V)
0
-60
5
VDS > ID × RDSon
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa475
2.5
VGS(th)
(V)
C
(pF)
(1)
2.0
017aaa476
102
10
(2)
.1.5
(1)
(3)
1.0
1
0.5
(2)
(3)
0
-60
0
60
120
Tj (°C)
10-1
10-1
180
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(2) typical values
(3) minimum values
(1) Ciss
Product data sheet
VDS (V)
102
(2) Coss
(3) Crss
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
NX7002AK
10
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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NX7002AK
NXP Semiconductors
60 V, single N-channel Trench MOSFET
017aaa477
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
2
QGD
QG(tot)
017aaa137
0
0
0.2
0.4
0.6
QG (nC)
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
0.8
ID = 0.2 A; VDS = 30 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa478
0.20
IS
(A)
0.15
(1)
0.10
(2)
0.05
0
0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
NX7002AK
Product data sheet
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
NX7002AK
Product data sheet
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60 V, single N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT23
B
D
A
E
X
HE
v
A
3
Q
A
A1
1
c
2
e1
bp
w
B
Lp
e
detail X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
max
nom
min
A
A1
1.1
0.1
0.9
bp
c
D
E
0.48 0.15
3.0
1.4
0.38 0.09
2.8
1.2
e
e1
1.9
0.95
HE
Lp
Q
2.5
0.45 0.55
2.1
0.15 0.45
v
w
0.2
0.1
sot023_po
Outline
version
SOT23
References
IEC
JEDEC
JEITA
European
projection
Issue date
14-06-19
14-09-22
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
NX7002AK
Product data sheet
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
13. Soldering
3.3
2.9
1.9
solder lands
3
solder resist
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
NX7002AK
Product data sheet
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60 V, single N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
NX7002AK v.7
20150806
Product data sheet
-
NX7002AK v.6
Modifications:
•
NX7002AK v.6
20150521
Product data sheet
-
NX7002AK v.5
NX7002AK v.5
20130213
Product data sheet
-
NX7002AK v.4
NX7002AK v.4
20121213
Product data sheet
-
NX7002AK v.3
NX7002AK v.3
20120710
Product data sheet
-
NX7002AK v.2
NX7002AK v.2
20120301
Product data sheet
-
NX7002AK v.1
NX7002AK v.1
20120212
Product data sheet
-
-
NX7002AK
Product data sheet
Dynamic parameters updated
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60 V, single N-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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NX7002AK
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
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repeated exposure to limiting values will permanently and irreversibly affect
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60 V, single N-channel Trench MOSFET
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the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NX7002AK
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
15 / 16
NX7002AK
NXP Semiconductors
60 V, single N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ................................................... 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 6 August 2015
NX7002AK
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
16 / 16