DRD2690Y50

DRD2690Y50
Rectifier Diode
DS5982-2 July 2011 (LN28532)
FEATURES

Double Side Cooling

High Surge Capability
KEY PARAMETERS
VRRM
IF(AV)
IFSM
5000V
2691A
55000A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VRRM
V
DRD2690Y50
DRD2690Y48
DRD2690Y46
DRD2690Y44
5000
4800
4600
4400
Conditions
VRSM = VRRM+100V
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD2690Y48 for a 4800V device
(See Package Details for further information)
Fig. 1 Package outline
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DRD2690Y50
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 75°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
3485
A
Double Side Cooled
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
5474
A
Continuous (direct) on-state current
-
5097
A
2299
A
IF
Half wave resistive load
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
3611
A
Continuous (direct) on-state current
-
3118
A
Test Conditions
Max.
Units
2691
A
IF
Half wave resistive load
Tcase = 100°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
4227
A
Continuous (direct) on-state current
-
3843
A
1742
A
IF
Half wave resistive load
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
2737
A
Continuous (direct) on-state current
-
2293
A
IF
Half wave resistive load
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DRD2690Y50
-3SEMICONDUCTOR
SURGE RATINGS
Symbol
IFSM
2
It
IFSM
2
It
Parameter
Surge (non-repetitive) on-state current
2
I t for fusing
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 150°C
44
kA
VR = 50% VRRM - ¼ sine
9.68
MA s
10ms half sine, Tcase = 150°C
55
kA
VR = 0
15.12
MA s
Min.
Max.
Units
2
I t for fusing
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.0095
°C/W
Single side cooled
Anode DC
-
0.019
°C/W
Cathode DC
-
0.019
°C/W
Double side
-
0.002
°C/W
-
0.004
°C/W
On-state (conducting)
-
160
°C
Reverse (blocking)
-
150
°C
Clamping force 43kN
(with mounting compound)
Tvj
Virtual junction temperature
Single side
Tstg
Storage temperature range
-55
150
°C
Fm
Clamping force
38.0
47.0
kN
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DRD2690Y50
SEMICONDUCTOR
CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VFM
Forward voltage
At 3000A peak, Tcase = 25°C
-
1.25
V
IRM
Peak reverse current
At VDRM, Tcase = 150°C
-
100
mA
QS
Total stored charge
IF = 2000A, dIRR/dt =4A/µs
-
7500
µC
Irr
Peak reverse recovery current
Tcase = 150°C, VR =100V
-
190
A
VTO
Threshold voltage
At Tvj = 150°C
-
0.82
V
rT
Slope resistance
At Tvj = 150°C
-
0.143
m
CURVES
8000
25ºC
10000
7000
150ºC
9000
Mean Power Dissipation (W)
Instantaneous Forward Current, IFM - (A)
11000
8000
7000
6000
5000
4000
3000
2000
6000
5000
4000
dc
3000
180sine
120 square
2000
60 square
30 square
1000
1000
0
0
0
0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
Instantaneous Forward Voltage , VFM - ( V )
VTM = A + Bln (IT) + C.IT+D.IT
2000
3000
4000
5000
6000
Mean on-state Current (A)
Fig.2 Maximum (limit) on-state characteristics
VTM EQUATION
1000
Fig.3 Dissipation curves
Where
A = - 0.630059
B = 0.2338835
C = 0.000166
D = - 0.009367
these values are valid for Tj = 150°C for IF 1000A to 11000A
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DRD2690Y50
-5SEMICONDUCTOR
25000
1400
QS max =
IRR max = 81.792*(di/dt)0.5963
4789.7*(di/dt)0.3197
Reverse recovery current , IRR - (A)
1200
Stored Charge, QS - (uC)
20000
15000
Conditions:
IF = 2000A
VR = 100V
Tj = 150oC
10000
5000
QS min = 2771.5*(di/dt)0.3717
1000
800
Conditions:
IF = 2000A
VR = 100V
Tj = 150oC
600
400
200
IRR min = 50.733*(di/dt)0.6536
0
0
0
50
100
150
Rate of decay of forward current, diF/dt - (A/us)
Fig.4 Total stored charge
0
50
100
150
Rate of decay of forward current, dIF/dt - (A/us)
Fig.5 Maximum reverse recovery current
Fig.6 Maximum (limit) transient thermal impedancejunction to case
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DRD2690Y50
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Normal weight: 1600g
Clamping force: 43kN±10%
Package outline type code:Y
Note:
Some packages may be supplied with gate and or tags.
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DRD2690Y50
-7SEMICONDUCTOR
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: [email protected]
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.
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