DIM1000XSM33-TS001

DIM1000XSM33-TS001
Single Switch IGBT Module
Replaces DS6126-1
DS6126-2 October 2015 (LN33011)
FEATURES
KEY PARAMETERS

10.2kV Isolation

10µs Short Circuit Withstand

High Thermal Cycling Capability
VCES
VCE(sat) * (typ)
IC
(max)
IC(PK)
(max)

High Current Density Enhanced DMOS SPT

Isolated AlSiC Base With AlN Substrates
* Measured at the auxiliary terminals
APPLICATIONS

High Reliability Inverters

Motor Controllers

Traction Drives

Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1000XSM33-TS001 is a single switch 3300V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10μs short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
3300V
2.2V
1000A
2000A
7(C)
5(C)
6(E)
4(E)
3(C)
2(G)
1(E)
Fig. 1 Circuit configuration
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1000XSM33-TS001
Note: When ordering, please use the complete part
number
Outline type code: X
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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1 /8
DIM1000XSM33-TS001
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Test Conditions
VGE = 0V
Max.
Units
3300
V
±20
V
Continuous collector current
Tcase = 110°C
1000
A
IC(PK)
Peak collector current
1ms, Tcase = 140°C
2000
A
Pmax
Max. transistor power dissipation
Tcase = 25°C, Tj = 150°C
10.4
kW
Diode I t value
VR = 0, tp = 10ms, Tj = 125°C
320
kA s
Visol
Isolation voltage – per module
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
10.2
kV
QPD
Partial discharge – per module
IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS
10
pC
2
It
2
2
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance – transistor
Rth(j-c)
Thermal resistance – diode
Rth(c-h)
Thermal resistance – case to heatsink
Tj
Tstg
Junction temperature
Storage temperature range
Screw torque
2/8
Min
Typ.
Max
Units
-
-
12
°C/kW
-
-
24
°C/kW
-
-
8
°C/kW
Transistor
-
-
150
°C
Diode
-
-
150
°C
-40
-
125
°C
Mounting – M6
-
-
5
Nm
Electrical connections – M4
-
-
2
Nm
Electrical connections – M8
-
-
10
Nm
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000XSM33-TS001
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
ICES
IGES
VGE(TH)
VCE(sat)
Parameter
Collector cut-off current
Test Conditions
Min
Typ
Max
Units
VGE = 0V, VCE = VCES
4
mA
VGE = 0V, VCE = VCES, Tcase = 125°C
60
mA
VGE = 0V, VCE = VCES, Tcase = 150°C
100
mA
1
μA
Gate leakage current
VGE = ± 20V, VCE = 0V
Gate threshold voltage
IC = 80mA, VGE = VCE
5.7
V
VGE = 15V, IC = 1000A
2.2
V
VGE = 15V, IC = 1000A, Tj = 125°C
2.8
V
VGE = 15V, IC = 1000A, Tj = 150°C
3.0
V
Collector-emitter saturation
voltage
IF
Diode forward current
DC
1000
A
IFM
Diode maximum forward current
tp = 1ms
2000
A
IF = 1000A
2.4
V
IF = 1000A, Tj = 125°C
2.5
V
IF = 1000A, Tj = 150°C
2.4
V
VF
Diode forward voltage
(IGBT arm)
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
170
nF
Qg
Gate charge
±15V Including external Cge
17
μC
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
4
nF
LM
Module inductance
15
nH
RINT
Internal resistance
135
μ
3700
A
Tj = 150°C, VCC = 2500V
SCData
Short circuit current, ISC
tp ≤ 10μs, VGE ≤ 15V
*
VCE (max) = VCES – L x dI/dt
IEC 60747-9
Note:
*
L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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3 /8
DIM1000XSM33-TS001
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
td(off)
tf
Turn-off delay time
Fall time
EOFF
td(on)
tr
EON
Qrr
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Irr
Erec
Min
Typ.
Max
Units
1.9
520
µs
ns
IF = 1000A
1800
560
360
1300
600
mJ
ns
ns
mJ
μC
Diode reverse recovery current
VCE = 1800V
680
A
Diode reverse recovery energy
dIF/dt = 2700A/μs
750
mJ
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.2
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
td(off)
Turn-off delay time
tf
EOFF
td(on)
tr
EON
Qrr
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec
Diode reverse recovery energy
Min
Typ.
Max
Units
2.0
µs
IF = 1000A
570
2000
550
420
1600
935
ns
mJ
ns
ns
mJ
μC
VCE = 1800V
775
A
dIF/dt = 2700A/μs
1200
mJ
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.2
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
Tcase = 150°C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Parameter
Test Conditions
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Min
Typ.
Max
Units
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.2
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
2.0
580
2100
550
430
1750
µs
ns
mJ
ns
ns
mJ
Qrr
Diode reverse recovery charge
IF = 1000A
1100
μC
Irr
Diode reverse recovery current
VCE = 1800V
825
A
Erec
Diode reverse recovery energy
dIF/dt = 2700A/μs
1450
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000XSM33-TS001
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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5 /8
DIM1000XSM33-TS001
6/8
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000XSM33-TS001
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
130±0.5
4 x M8
57 ±0.25
57 ±0.25
screwing depth
max. 16
18±0.2
41±0.2
44 ±0.2
140 ±0.5
124 ±0.25
18 ±0.1
7
3 x M4
28.5 ±0.2
42.5 ±0.2
30.7 ±0.2
6 xØ 7
38±0.5
screwing depth
max. 8
61.2 ±0.3
5 ±0.2
48
+1.5
-0.0
16.5 ±0.2
Nominal Weight:
1100g
Module Outline Type Code:
X
Fig. 11 Module outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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7 /8
DIM1000XSM33-TS001
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot
constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and
the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety
and any warning requirements are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or
typographical errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it
is the most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to
property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a
product failure or malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use
outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or
explosion. Appropriate application design and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
Preliminary Information:
The product design is complete and final characterisation for volume production is in progress.
The datasheet represents the product as it is now understood but details may change.
No Annotation:
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available
on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade
names of their respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
Fax:
+44(0)1522 500550
Tel:
+44(0)1522 500500
Web:
http://www.dynexsemi.com
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
Fax:
+44(0)1522 500020
Tel:
+44(0)1522 502753 / 502901
Email: [email protected]
 Dynex Semiconductor Ltd. 2013
Technical Documentation – Not for resale.
8/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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