DIM400GCM33-F

DIM400GCM33-F000
IGBT Chopper Module
Replaces DS5863-1.1
DS5863-2 February 2011 (LN28080)
FEATURES
KEY PARAMETERS

10µs Short Circuit Withstand

High Thermal Cycling Capability

Soft Punch Through Silicon
VCES
VCE(sat) * (typ)
IC
(max)
IC(PK)
(max)

Isolated AlSiC Base With AlN Substrates

Lead Free Construction
* Measured at the auxiliary terminals
APPLICATIONS

Choppers

Motor Controllers

Power Supplies

Traction Auxiliaries
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM400GCM33-F000 is a 3300V, n-channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module. The IGBT has a wide reverse
bias safe operating area (RBSOA) plus 10μs short
circuit withstand. This device is optimised for traction
drives and other applications requiring high thermal
cycling capability.
3300V
2.8V
400A
800A
1(E)
2(K)
3(C)
4(A)
7(E)
6(G)
5(C)
Fig. 1 Circuit configuration
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400GCM33-F000
Outline type code: G
Note: When ordering, please use the complete part
number
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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1 /8
DIM400GCM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Test Conditions
VGE = 0V
Max.
Units
3300
V
±20
V
Continuous collector current
Tcase = 90°C
400
A
IC(PK)
Peak collector current
1ms, Tcase = 115°C
800
A
Pmax
Max. transistor power dissipation
Tcase = 25°C, Tj = 150°C
5200
W
80
kA s
80
kA s
6000
V
10
pC
2
2
Diode I t value (IGBT arm)
It
VR = 0, tp = 10ms, Tj = 125ºC
2
Diode I t value (Diode arm)
Visol
Isolation voltage – per module
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
QPD
Partial discharge – per module
IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
2
2
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Comparative Tracking Index):
350
Symbol
Parameter
Rth(j-c)
Thermal resistance – transistor (per arm)
Thermal resistance – diode (IGBT arm)
Rth(j-c)
Rth(c-h)
Tj
Tstg
Continuous dissipation –
junction to case
Min
Typ.
Max
Units
-
-
24
°C/kW
-
-
48
°C/kW
48
°C/kW
Thermal resistance – diode (Diode arm)
Continuous dissipation –
junction to case
Thermal resistance – case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
-
8
°C/kW
Transistor
-
-
150
°C
Diode
-
-
125
°C
-40
-
125
°C
Mounting – M6
-
-
5
Nm
Electrical connections – M4
-
-
2
Nm
Electrical connections – M8
-
-
10
Nm
Junction temperature
Storage temperature range
Screw torque
2/8
Test Conditions
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400GCM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Max
Units
VGE = 0V, VCE = VCES
2
mA
VGE = 0V, VCE = VCES, Tcase = 125°C
30
mA
Gate leakage current
VGE = ± 20V, VCE = 0V
1
μA
VGE(TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
7.0
V
Collector-emitter
saturation voltage
VGE = 15V, IC = 400A
2.8
V
VCE(sat)
VGE = 15V, IC = 400A, Tj = 125°C
3.6
V
IF
Diode forward current
DC
400
A
IFM
Diode maximum forward current
tp = 1ms
800
A
2.9
V
2.9
V
3.0
V
3.0
V
ICES
IGES
VF
†
Parameter
Test Conditions
Min
Typ
Collector cut-off current
Diode forward voltage
(IGBT arm)
Diode forward voltage
(Diode arm)
Diode forward voltage
(IGBT arm)
Diode forward voltage
(Diode arm)
5.5
6.5
IF = 400A
IF = 400A, Tj = 125°C
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
72
nF
Qg
Gate charge
±15V
10
μC
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
LM
Module inductance – per arm
25
nH
RINT
Internal resistance – per arm
260
μ
1850
A
SCData
Short circuit current, ISC
Tj = 125°C, VCC = 2500V
tp ≤ 10μs, VGE ≤ 15V
*
VCE (max) = VCES – L x dI/dt
IEC 60747-9
nF
Note:
†
Measured at the power busbars, not the auxiliary terminals
*
L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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3 /8
DIM400GCM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
Parameter
Test Conditions
Turn-off delay time
Min
IC = 400A
Typ.
Max
Units
2100
ns
Fall time
VGE = ±15V
210
ns
Turn-off energy loss
VCE = 1800V
520
mJ
1130
ns
245
ns
620
mJ
160
μC
RG(ON) = 5.6
Turn-on delay time
RG(OFF) = 8.2
Cge = 110nF
Rise time
LS ~ 100nH
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse recovery current
VCE = 1800V
330
A
Erec
Diode reverse recovery energy
dIF/dt = 2000A/μs
150
mJ
IF = 400A
Tcase = 125°C unless stated otherwise
Parameter
Symbol
td(off)
tf
EOFF
td(on)
tr
Test Conditions
Turn-off delay time
Turn-off energy loss
Units
VGE = ±15V
220
ns
VCE = 1800V
600
mJ
1160
ns
285
ns
870
mJ
300
μC
RG(OFF) = 8.2
Cge = 110nF
Rise time
Max
ns
RG(ON) = 5.6
Turn-on delay time
Typ.
2150
IC = 400A
Fall time
Min
LS ~ 100nH
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse recovery current
VCE = 1800V
400
A
Erec
Diode reverse recovery energy
dIF/dt = 2000A/μs
300
mJ
4/8
IF = 400A
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400GCM33-F000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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5 /8
DIM400GCM33-F000
6/8
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400GCM33-F000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal Weight: 1050g
Module Outline Type Code:
G
Fig. 11 Module outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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7 /8
DIM400GCM33-F000
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not
constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and
the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety
and any warning requirements are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or
typographical errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it
is the most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to
property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a
product failure or malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use
outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or
explosion. Appropriate application design and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
Preliminary Information:
The product design is complete and final characterisation for volume production is in progress.
The datasheet represents the product as it is now understood but details may change.
No Annotation:
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available
on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade
names of their respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
Fax:
+44(0)1522 500550
Tel:
+44(0)1522 500500
Web:
http://www.dynexsemi.com
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
Fax:
+44(0)1522 500020
Tel:
+44(0)1522 502753 / 502901
Email: [email protected]
 Dynex Semiconductor Ltd. 2005
8/8
Technical Documentation – Not for resale.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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