DCR780G30 Phase Control Thyristor DS6045-1 April 2011 (LN28256) KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 3000 V 780 A 10500 A 1000 V/µs 200 A/µs * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR780G30 DCR780G28 DCR780G26 DCR780G24 Repetitive Peak Voltages VDRM and VRRM V 3000 2800 2600 2400 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 60mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM +100V respectively Lower voltage grades available. ORDERING INFORMATION Outline type code: G (See Package Details for further information) Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR780G30 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR780G30 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 780 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1220 A Continuous (direct) on-state current - 1100 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 10.5 kA VR = 0 0.551 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.035 °C/W Rth(c-h) Thermal resistance – case to heatsink Double side cooled DC - 0.008 °C/W Tvj Virtual junction temperature Blocking VDRM / VRRM - 125 °C Tstg Storage temperature range -40 140 °C Fm Clamping force 12 18 kN 2/9 www.dynexsemi.com DCR780G30 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units - 60 mA 1000 - V/µs Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open dI/dt Rate of rise of on-state current From 67% VDRM to 1000A Repetitive 50Hz - 200 A/µs Gate source 30V, 10, Non-repetitive - 1000 A/µs 1.90 V tr < 0.5µs, Tj = 125°C VT VT(TO) rT tgd On-state voltage IT = 1500A, Tcase = 125°C Threshold voltage – Low level Tcase = 125°C - 1.00 V On-state slope resistance – Low level Tcase = 125°C - 0.60 m VD = 67% VDRM, gate source 30V, 10 - 3.0 µs 400 µs Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 100V, dI/dt = 10A/µs, dVDR/dt = 20V/µs linear to 67% VDRM QS Stored charge IT = 1000A, tp = 1000us,Tj = 125°C, dI/dt =10A/µs, - 2400 µC IRR Reverse recovery current - 125 A IL Latching current Tj = 25°C, - 1 A IH Holding current Tj = 25°C, - 200 mA GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units 3 V VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C VGD Gate non-trigger voltage At 40% VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 300 mA IGD Gate non-trigger current At 40% VDRM, Tcase = 125°C TBD mA 3/9 www.dynexsemi.com DCR780G30 SEMICONDUCTOR CURVES 10000 Instantaneous on-state current, IT - (A) 9000 8000 7000 VTM EQUATION 6000 VTM = A + Bln (IT) + C.IT+D.IT 5000 4000 Where A = 0.446497 B = 0.11214 C = 0.000516 D = -0.003629 These values are valid for Tj = 125°C 3000 2000 Tj=25°C 1000 Tj=125°C 0 0 1 2 3 4 5 Instantaneous on-state voltage,VT - (V) 6 Fig.2 Maximum &minimum on-state characteristics 0.04 Double side cooled t i Rthjc t Rthi 1 e i 1 Thermal Impedance Zth(j-c) (°C/W) n 0.03 0.02 0.01 i τi (s) Rthi (°C/kW) 1 0.7085781 19.71901 2 0.1435833 4.240625 3 0.0361520 7.963806 4 0.0021308 3.043661 0 0.001 0.01 0.1 Time ( s ) 1 10 100 Fig.3 Maximum (limit) transient thermal impedance – junction to case (°C/W) 4/9 www.dynexsemi.com DCR780G30 SEMICONDUCTOR 1600 130 120 Mean power dissipation - (W) 1200 1000 800 600 400 180 120 90 60 30 200 0 0 Maximum case temperature, Tcase - (°C) 1400 110 100 90 80 70 60 50 40 30 20 10 0 100 200 300 400 500 600 700 800 Mean on-state current, IT(AV) - (A) 0 Fig.4 On-state power dissipation – sine wave 130 180 120 90 60 30 100 200 300 400 500 600 700 800 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible case temperature, double side cooled – sine wave 1400 120 1200 100 Mean power dissipation - (W) Maximum case temperature, Tcase - (°C) 110 1000 90 80 70 60 50 40 d.c. 180 120 90 60 30 30 20 10 0 800 600 400 d.c. 180 120 90 60 30 200 0 0 100 200 300 400 500 600 700 800 Mean on-state current, IT(AV) - (A) Fig.6 Maximum permissible case temperature, double side cooled – rectangular wave 0 100 200 300 400 500 600 700 800 Mean on-state current, IT(AV) - (A) Fig.7 On-state power dissipation – rectangular wave 5/9 www.dynexsemi.com DCR780G30 SEMICONDUCTOR 11.0 Conditons: Tcase=125°C VR=0 Pulse width = 10ms 10.0 0.60 0.55 9.0 0.50 8.0 I2t (MA2s) Surge current, ITSM - (KA) Conditons: Tcase=125°C VR=0 half-sine wave 7.0 6.0 0.45 0.40 5.0 0.35 4.0 0.30 3.0 2.0 0.25 1 10 Number of cycles 100 1 Fig.9 Single-cycle I t 5000 500 Conditons: Tj=125°C IT=1000A VR=0 Reverse recovery current, IRR - (A) 4500 Stored charge, QS - (uC) 4000 3500 3000 2500 2000 Conditons: Tj=125°C IT=1000A VR=0 1000 1 10 Rate of decay of on-state current, di/dt - (A/us) Fig.10 Stored charge vs di/dt 10 2 Fig.8 Multi-cycle surge current 1500 Pulse width, tp - (ms) 100 400 300 200 100 0 1 10 Rate of decay of on-state current, di/dt - (A/us) 100 Fig.11 Reverse recovery current vs di/dt 6/9 www.dynexsemi.com DCR780G30 SEMICONDUCTOR 4.50 4.00 Gate trigger voltage, VGT - (V) 3.50 Upper limit 3.00 2.50 2.00 1.50 1.00 Lower limit 0.50 Tj=-40°C Tj=25°C Tj=125°C 0.00 0 50 100 150 200 250 300 350 400 450 500 Gate trigger current IGT, - (mA) Fig.12 Gate characteristics 12.0 PGM=20W Gate trigger voltage, VGT - (V) 10.0 8.0 6.0 A 4.0 A is Recommended Triggering Area. B is Unreliable Triggering Area. C is Recommended Gate Load Line. 2.0 0.0 B 0.0 C 1.0 2.0 3.0 4.0 Gate trigger current IGT, - (A) Fig.13 Gate characteristics 7/9 www.dynexsemi.com DCR780G30 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Package outline type code: G Fig.14 Package outline 8/9 www.dynexsemi.com DCR780G30 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 9/9 www.dynexsemi.com