DCR2760M85

DCR2760M85
Phase Control Thyristor
DS6078-1 September 2012 (LN 29818)
KEY PARAMETERS
FEATURES

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
8500V
2765A
32500A
1500V/µs
200A/µs
* Higher dV/dt selections available
APPLICATIONS

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
DCR2760M85*
DCR2760M80
DCR2760M75
DCR2760M70
8500
8000
7500
7000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
o
o
*8200V @ -40 C, 8500V @ 0 C
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR2760M85
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR2760M85
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
2765
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4343
A
Continuous (direct) on-state current
-
4083
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
32.5
kA
VR = 0
5.28
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.00518
°C/W
Single side cooled
Anode DC
-
0.01012
°C/W
Cathode DC
-
0.01080
°C/W
Double side
-
0.001
°C/W
-
0.002
°C/W
-
125
°C
Clamping force 83.0kN
(with mounting compound)
Blocking VDRM / VRRM
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
74.0
91.0
kN
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DCR2760M85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
300
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
100
A/µs
Gate source 30V, 10,
Non-repetitive
-
200
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
500 to 1600A at Tcase = 125°C
-
0.9
V
Threshold voltage – High level
1600 to 4000A at Tcase = 125°C
-
1.18
V
On-state slope resistance – Low level
500A to 1600A at Tcase = 125°C
-
0.65
m
On-state slope resistance – High level
1600A to 4000A at Tcase = 125°C
-
0.46
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
1000
µs
5150
7950
µC
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
IT = 3000A, Tj = 125°C,
VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~5100V, VR ~ 3400V
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR2760M85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
400
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
7000
Max 125ºC
Min 125ºC
6000
max 25ºC
min 25CºC
Instantaneous on-state current, IT - (A)
5000
4000
3000
2000
1000
0
0.5
1.5
2.5
3.5
4.5
Instantaneous forward voltage drop, VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = -0.224010
B = 0.1725829
C = 0.000292
D = 0.01039
these values are valid for Tj = 125°C for IT 500A to 4200A
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DCR2760M85
SEMICONDUCTOR
130
16
120
Maximum case temperature, T case ( oC )
Mean power dissipation - (kW)
180
120
90
60
110
14
12
10
8
6
180
120
90
60
30
4
2
100
90
80
70
60
50
40
30
20
0
0
1000
2000
3000
Mean on-state current, IT(AV) - (A)
10
4000
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
130
180
110
120
14
90
100
Mean power dissipation - (kW)
Maximum heatsink temperature, T Heatsink - ( oC )
16
120
60
90
80
70
60
50
40
12
10
8
6
d.c.
180
120
90
60
30
4
30
2
20
10
0
0
0
0
1000
2000
3000
4000
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
5000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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DCR2760M85
SEMICONDUCTOR
130
130
d.c.
120
180
110
120
Maximum heatsik temperature Theatsink - (oC)
Maximum permissible case temperature , Tcase - (°C)
120
90
100
60
90
30
80
70
60
50
40
30
180
120
100
90
90
60
80
30
70
60
50
40
30
20
20
10
10
0
d.c.
110
0
0
2000
4000
0
Mean on-state current, IT(AV) - (A)
2000
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled
12.0
Anode side cooled
Anode Side Cooled.
Transient Thermal Impedance, Zth - ( °C/kW )
11.0
10.0
Double Side Cooled.
Cathode side cooled
Cathode Side Cooled.
Ri (°C/kW)
1
2
1.995338 1.242784
Ti (s)
Ri (°C/kW)
6.092995 1.957372 2.042252 0.035908
Ti (s)
Ri (°C/kW)
Ti (s)
0.05
3
1.9448
4
0.005
0.592935 0.592385 110.5108
5.459764 0.510898
0.05
110.1735
6.856845 1.876401 2.062845 0.025343
5.181139 0.557321
0.05
110.1546
i 4
9.0
Zth  [Ri  (1  exp(T / Ti )]
8.0
i 1
7.0
Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
6.0
5.0
4.0
Double side cooling
Zth (z)
°
sine.
rect.
180
0.51
0.36
120
0.57
0.49
90
0.64
0.56
60
0.70
0.63
30
0.74
0.71
15
0.76
0.74
3.0
2.0
1.0
0.0
0.001
4000
Mean on-state current, IT(AV) - (A)
0.01
0.1
1
10
Anode Side Cooling
Zth (z)
°
sine.
rect.
180
0.51
0.36
120
0.58
0.50
90
0.65
0.57
60
0.71
0.64
30
0.75
0.71
15
0.77
0.75
Cathode Sided Cooling
Zth (z)
°
sine.
rect.
180 0.51
0.36
120 0.58
0.50
90
0.65
0.57
60
0.71
0.64
30
0.75
0.71
15
0.77
0.75
100
Time ( s )
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR2760M85
SEMICONDUCTOR
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
800
41000
QSmax = 7950.1*(di/dt)0.4626
- (A)
700
IRRmax = 63.604*(di/dt)0.7474
600
RR
31000
Reverse recovery current, I
Stored Charge, Qs - (uC)
36000
26000
21000
QSmin = 5146.8*(di/dt)0.5188
16000
Conditions :
Tj = 125OC, VRpeak ~ 5100V
VRM ~ 3400V
snubber as appropriate to control
reverse voltage
11000
6000
500
400
IRRmin = 51.42*(di/dt)0.7839
300
Conditions:
Tj = 125OC, VRpeak ~ 5100V
VRM ~ 3400V
snubber as appropriate to
control reverse volts
200
100
1000
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
0
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
Fig.13 Reverse recovery current
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DCR2760M85
SEMICONDUCTOR
10
9
8
Upper Limit
Gate trigger voltage, VGT - (V)
7
6
5
Preferred gate drive area
4
3
2
Tj = -40oC
Tj = 25o C
1
Lower Limit
Tj = 125oC
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Gate trigger current IGT, - (A)
0.7
0.8
0.9
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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1
DCR2760M85
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Lead length: 420mm
Lead terminal connector: M4 ring
Nominal weight: 1950g
Package outline type code: M
Fig.16 Package outline
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DCR2760M85
SEMICONDUCTOR
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: [email protected]
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.
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