Si3446ADV Vishay Siliconix New Product N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES rDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ) • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8-mm Profile 5.6 nC RoHS COMPLIANT APPLICATIONS • Load Switch for Portable Applications • Small High Frequency DC-DC converter TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 AC S XXX Lot Traceability and Date Code G (3) Part # Code 2.85 mm (4) S Ordering Information: Si3446ADV–T1–E3 (Lead (Pb)–free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 20 ± 12 6a 5.9 5.8b,c 4.7b,c 20 2.7 TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS 1.7b,c 3.2 2.1 PD 2b,c 1.25b,c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 51 32 Maximum 62.5 39 Unit °C/W Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under steady state conditions is 110 °C/W. Document Number: 73772 S-60469–Rev. A, 27-Mar-06 www.vishay.com 1 Si3446ADV Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 250 µA 20 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C -4 0.8 1.8 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.8 A 20 0.037 VGS = 2.5 V, ID = 1.5 A 0.053 0.065 VDS = 10 V, ID = 5.8 A 15 VDS = 10 V, VGS = 0 V, f = 1 MHz 110 640 pF 60 VDS = 10 V, VGS = 10 V, ID = 5.8 A 13 20 5.6 9 VDS = 10 V, VGS = 4.5 V, ID = 5.8 A 1.45 f = 1 MHz 2.8 nC 1.4 VDD = 10 V, RL = 2.1 Ω ID ≅ 4.7 A, VGEN = 4.5 V, Rg = 1 Ω Ω 50 75 120 180 30 45 40 60 td(on) 7 15 tr Ω S tf td(off) µA A 0.031 td(on) td(off) V 21.5 VDD = 10 V, RL = 2.1 Ω ID ≅ 4.7 A, VGEN = 10 V, Rg = 1 Ω tf 86 130 25 40 10 15 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage IS TC = 25 °C 6 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 IS = 4.7 A, VGS = 0 V IF = 4.7 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 21 40 ns 12 25 nC 13 8 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73772 S-60469–Rev. A, 27-Mar-06 Si3446ADV Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted 10 VGS = 3 thru 5 V 16 I D – Drain Current (A) ID – Drain Current (A) 20 12 VGS = 2.5 V 8 VGS = 2 V 4 8 6 TC = - 55 °C 4 TC = 125 °C 2 TC = 25 °C VGS = 1.5 V 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 1.5 2.0 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 900 750 0.08 C – Capacitance (pF) rDS(on) – On-Resistance (m ) 1.0 VDS – Drain-to-Source Voltage (V) 0.10 VGS = 2.5 V 0.06 Ciss 600 450 300 0.04 Coss VGS = 4.5 V 150 0.02 Crss 0 0 4 8 12 16 20 0 4 8 12 16 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 20 1.6 VGS = 2.5 V I D = 5.8 A ID = 5.8 A 1.4 8 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 0.5 VDS = 10 V 6 VDS = 16 V 4 2 1.2 VGS = 4.5 V 1.0 0.8 0.6 0 0 2 4 6 8 10 12 14 0.4 - 50 - 25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73772 S-60469–Rev. A, 27-Mar-06 150 www.vishay.com 3 Si3446ADV Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted I S – Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.0 0.10 rDS(on) – Drain-to-Source On-Resistance (m ) 20 ID = 5.8 A 25 °C 0.09 0.08 0.07 0.06 0.05 0.04 0.03 125 °C 0.02 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD – Source-to-Drain Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Temperature 1.4 50 1.3 40 ID = 250 µA 1.2 Power (W) VGS(th) (V) 1.1 1.0 0.9 30 20 0.8 0.7 10 0.6 0.5 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ – Temperature ( C) 0.1 1 10 100 1000 Time (sec) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 *Limited by rDS(on) BVDSS Limited I D – Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 *VGS 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73772 S-60469–Rev. A, 27-Mar-06 Si3446ADV Vishay Semiconductors TYPICAL CHARACTERISTICS 25 °C unless noted 4 10 8 Power Dissipation (W) ID – Drain Current (A) 3 6 Package Limited 4 2 1 2 0 0 0 25 50 75 100 TC – Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC – Case Temperature (°C) Power Derating *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73772 S-60469–Rev. A, 27-Mar-06 www.vishay.com 5 Si3446ADV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73772. www.vishay.com 6 Document Number: 73772 S-60469–Rev. A, 27-Mar-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1