Si1032R/X Vishay Siliconix N-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • • • • • • • Halogen-free Option Available Low-Side Switching Low On-Resistance: 5 Ω Low Threshold: 0.9 V (typ.) Fast Switching Speed: 35 ns TrenchFET® Power MOSFETs: 1.5-V Rated 2000 V ESD Protection RoHS COMPLIANT BENEFITS • • • • • SC-75A or SC-89 G 1 Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS 3 S D • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers 2 Marking Code: G Top View Ordering Information: Si1032R-T1-E3 (SC-75A, Lead (Pb)-free) Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-E3 (SC-89, Lead (Pb)-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Si1032R Parameter Symbol 5s Si1032X Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C a Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS PD Steady State Unit V 200 140 210 200 110 100 150 140 IDM Pulsed Drain Current Maximum Power Dissipationa for SC-75 ID 5s 500 600 250 200 300 240 280 250 340 300 145 130 170 150 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. Document Number: 71172 S-81543-Rev. E, 07-Jul-08 www.vishay.com 1 Si1032R/X Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS = VGS, ID = 250 µA 0.40 Typ. Max. Unit V Static VGS(th) Gate Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current a 1.2 ± 0.5 ± 1.0 VDS = 0 V, VGS = ± 4.5 V ± 1.0 ± 3.0 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 ID(on) On-State Drain Current Drain-Source On-State Resistancea Forward 0.7 VDS = 0 V, VGS = ± 2.8 V VDS = 5 V, VGS = 4.5 V RDS(on) Transconductancea Diode Forward Voltagea 250 mA VGS = 4.5 V, ID = 200 mA 5 VGS = 2.5 V, ID = 175 mA 7 VGS = 1.8 V, ID = 150 mA 9 VGS = 1.5 V, ID = 40 mA 10 gfs VDS = 10 V, ID = 200 mA VSD IS = 150 mA, VGS = 0 V µA Ω 0.5 S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 750 VDS = 10 V, VGS = 4.5 V, ID = 250 mA tr Rise Time td(off) Turn-Off Delay Time pC 75 225 50 VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω 25 tf Fall Time ns 50 25 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.5 600 TJ = - 55 °C VGS = 5 thru 1.8 V 500 ID - Drain Current (mA) ID - Drain Current (A) 0.4 0.3 0.2 0.1 25 °C 400 125 °C 300 200 100 1V 0.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71172 S-81543-Rev. E, 07-Jul-08 Si1032R/X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 50 100 40 80 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 0 V f = 1 MHz 30 20 Ciss 60 40 VGS = 1.8 V 10 Coss 20 VGS = 2.5 V VGS = 4.5 V 0 0 50 100 150 200 Crss 0 250 0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) Capacitance On-Resistance vs. Drain Current 5 1.60 VDS = 10 V ID = 150 mA 4 1.40 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 3 2 1 VGS = 4.5 V ID = 200 mA 1.20 VGS = 1.8 V ID = 175 mA 1.00 0.80 0 0.0 0.2 0.4 0.6 0.60 - 50 0.8 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 1000 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = 50 °C 10 1 0.0 40 ID = 200 mA 30 20 ID = 175 mA 10 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - S ource-to-Drain Voltage (V) Surge-Drain Diode Forward Voltage Document Number: 71172 S-81543-Rev. E, 07-Jul-08 1.4 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si1032R/X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.3 3.0 0.2 2.5 2.0 IGSS - (µA) V GS(th) Variance (V) ID = 0.25 mA 0.1 0.0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 2.8 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 25 50 75 TJ - Temperature (°C) IGSS vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature 100 125 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71172. www.vishay.com 4 Document Number: 71172 S-81543-Rev. E, 07-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1