AP2186/ AP2196 1.5A DUAL CHANNEL CURRENT-LIMITED POWER SWITCH Description Pin Assignments The AP2186 and AP2196 are integrated high-side power switches ( Top View ) optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices complies with USB 2.0 and EN1 available with both polarities of Enable input. They offer current and thermal limiting and short circuit protection as well as controlled rise time and under-voltage lockout functionality. A 7ms deglitch capability on the open-drain Flag output prevents false over-current reporting and does not require any external components. All devices are available in SO-8 and MSOP-8EP packages 8 FLG1 2 7 FLG2 3 6 GND EN2 4 5 OUT2 IN SO-8 Features Dual USB Port Power Switches Over-Current and Thermal Protection 2.1A Accurate Current Limiting Reverse Current Blocking 90mΩ On-Resistance Input Voltage Range: 2.7V - 5.5V 0.6ms Typical Rise Time Very Low Shutdown Current: 1µA (max) Fault Report (FLG) with Blanking Time (7ms typ) ESD Protection: 6KV HBM, 300V MM Active Low (AP2186) or Active High (AP2196) Enable Ambient Temperature Range -40ºC to +85°C OUT1 1 ( Top View ) EN1 1 8 OUT1 FLG1 2 7 IN FLG2 3 6 GND EN2 4 5 OUT2 MSOP-8EP Applications SO-8 and MSOP-8EP (Exposed Pad): Available in “Green” Consumer electronics – LCD TV & Monitor, Game Machines Molding Compound (No Br, Sb) Communications – Set-Top-Box, GPS, Smartphone Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) UL Recognized, File Number E322375 IEC60950-1 CB Scheme Certified Notes: Computing – Laptop, Desktop, Servers, Printers, Docking Station, HUB 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Typical Applications Circuit Power Supply 2.7V to 5.5V IN 10k 10k 10uF OFF AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 0.1uF 68uF 0.1uF 68uF 0.1uF FLG1 FLG2 ON Load OUT1 EN1 EN2 OUT2 Load GND 1 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Available Options Part Number Channel Enable Pin (EN) Current Limit (typ) Recommended Maximum Continuous Load Current AP2186 AP2196 2 2 Active Low Active High 2.1A 2.1A 1.5A 1.5A Pin Descriptions Pin Name Pin Number SO-8 MSOP-8EP EN1 FLG1 FLG2 EN2 OUT2 GND 1 2 3 4 5 6 1 2 3 4 5 6 IN OUT1 7 8 7 8 Exposed Pad — Function Switch 1 enable input, active low (AP2186) or active high (AP2196) Switch 1 over-current and over-temperature fault report, open-drain Switch 2 over-current and over-temperature fault report, open-drain Switch 2 enable input, active low (AP2186) or active high (AP2196) Switch 2 voltage output pin Ground Voltage input pin Switch 1 voltage output pin Exposed Pad: Exposed Pad It should be connected externally to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path. Functional Block Diagram FLG 1 T h e rm a l S ense D e g litc h EN1 D riv e r C u rre n t L im it GND U VLO CS O UT1 CS O UT2 R e v e rs e b lo c k in g IN R e v e rs e b lo c k in g U VLO EN2 FLG 2 D riv e r C u rre n t L im it D e g litc h T h e rm a l S ense AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 GND 2 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol ESD HBM ESD MM VIN Rating 6 Unit kV Machine Model ESD Protection 300 V Input Voltage 6.5 V VOUT Output Voltage VIN +0.3 V VEN , VFLG Enable Voltage 6.5 V Internal Limited A 150 °C -65 to +150 °C ILOAD TJ(MAX) TST Note: Parameter Human Body Model ESD Protection Maximum Continuous Load Current Maximum Junction Temperature Storage Temperature Range (Note 4) 4. UL Recognized Rating from -30°C to +70°C (Diodes qualified TST from -65°C to +150°C) Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter VIN Input voltage IOUT Output Current Min Max Units 2.7 5.5 V 0 1.5 A VIL EN Input Logic Low Voltage 0 0.8 V VIH EN Input Logic High Voltage 2.0 VIN V TA Operating Ambient Temperature -40 +85 C AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 3 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Electrical Characteristics (@TA = +25°C, CIN = 10µF, VIN = +5V, unless otherwise specified.) Symbol Parameter Test Conditions Min Typ Max 1.6 1.9 2.5 V Disabled, IOUT = 0 0.5 1 µA Enabled, IOUT = 0 95 140 µA 1 µA VUVLO Input UVLO RLOAD = 1kΩ ISHDN Input Shutdown Current Input Quiescent Current, Dual IQ ILEAK Input Leakage Current Disabled, OUT grounded IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5V, IREV at VIN RDS(ON) ISHORT ILIMIT Unit 1 µA VIN = 5V, IOUT = 1.5A, -40°C ≤ TA ≤ +85°C MSOP-8EP SO-8 90 100 135 135 mΩ mΩ VIN = 3.3V, IOUT = 1.5A, -40°C ≤ TA ≤ +85°C MSOP-8EP SO-8 120 160 mΩ 2.6 A Switch On-Resistance Short-Circuit Current Limit Enabled into short circuit, CL = 68µF Over-Load Current Limit VIN = 5V, VOUT = 4.5V, CL = 120µF, -40°C ≤ TA ≤ +85°C 2.1 1.6 2.1 A Current Limiting Trigger Threshold VIN = VEN, Output Current Slew rate (<100A/WS), CL = 68µF 2.5 A TSHORT Short-Circuit Response Time VOUT = 0V to IOUT = ILIMIT (short applied to output), CL = 68µF 20 µs VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V EN Input Leakage VEN = 5V TD(ON) Output Turn-On Delay Time CL=1µF, RLOAD = 10Ω 0.05 TR Output Turn-On Rise Time CL=1µF, RLOAD = 10Ω 0.6 ITrig ISINK 0.8 V 2 V 1 µA ms 1.5 ms Output Turn-Off Delay Time CL=1µF, RLOAD = 10Ω 0.01 Output Turn-Off Fall Time CL=1µF, RLOAD = 10Ω 0.05 0.1 RFLG FLG Output FET On-Resistance IFLG =10mA 20 40 Ω IFOH Error Flag Off Current VFLG = 5V 0.01 1 µA 7 15 ms TD(OFF) TF TBlank FLG Blanking Time CL = 68µF TSHDN Thermal Shutdown Threshold Enabled, RLOAD = 1kΩ THYS Thermal Shutdown Hysteresis 25 SO-8 (Note 5) Thermal Resistance Junction-to-Ambient MSOP-8EP (Note 6) 110 60 θJA Notes: 4 ms ms C 140 C o C/W o C/W 5. Test condition for SO-8: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad layout. 6. Test condition for MSOP-8EP: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom layer ground plane. AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 4 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Typical Performance Characteristics VEN 50% TD(ON) 10% TD(OFF) TR TF 90% 50% 50% TD(OFF) TR VOUT VEN 50% TD(ON) 90% VOUT 10% CL=1µF TF 90% 10% TA= +25°C RL=5Ω 90% 10% Figure 1 Voltage Waveforms: AP2186 (left), AP2196 (right) All Enable Plots are for AP2196 Active High Channel 1 Turn-On Delay and Rise Time Channel 1 Turn-Off Delay and Fall Time Ven 1 5V/div Ven 1 5V/div CL=1µF Vout 1 2V/div Vout 1 2V/div TA= +25°C RL=5Ω CL=1µF TA= +25°C RL=5Ω 400µs/div 400µs/div Channel 2 Turn-On Delay and Rise Time Channel 2 Turn-Off Delay and Fall Time Ven 2 5V/div Ven 2 5V/div CL=1µF Vout 2 2V/div TA= +25°C RL=5Ω Vout 2 2V/div CL=1µF TA= +25°C RL=5Ω 400µs/div 400µs/div AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 5 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Typical Performance Characteristics (cont.) Channel 1 Turn-On Delay and Rise Time Channel 1 Turn-Off Delay and Fall Time Ven 2 5V/div Ven 2 5V/div CL=100µF Vout 2 2V/div TA= +25°C Vout 2 2V/div RL=5Ω CL=100µF TA= +25°C RL=5Ω 400µs/div 400µs/div Channel 2 Turn-On Delay and Rise Time Channel 2 Turn-Off Delay and Fall Time Ven 2 5V/div Ven 2 5V/div CL=100µF Vout 2 2V/div TA= +25°C Vout 2 2V/div RL=5Ω CL=100µF TA= +25°C RL=5Ω 400µs/div 400µs/div Channel 1 Short Circuit Current, Device Enabled Into Short Channel 2 Short Circuit Current, Device Enabled Into Short Ven 1 5V/div Ven 2 5V/div Iout 1 500mA/div Iout 2 500mA/div VIN=5V VIN=5V TA= +25°C TA= +25°C CL=68µF CL=68µF 500µs/div AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 500µs/div 6 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Typical Performance Characteristics (cont.) Channel 1 Inrush Current Channel 2 Inrush Current Ven 1 5V/div Ven 2 5V/div CL=100µF CL=470µF VIN=5V TA= +25°C RL=3.3Ω Iout 1 500mA/div CL=100µF CL=470µF VIN=5V TA= +25°C RL=3.3Ω Iout 2 500mA/div CL=220µF CL=220µF 1ms/div 1ms/div Channel 1 0.6 Ω Load Connected to Enabled Device Channel 2 0.6 Ω Load Connected to Enabled Device VIN=5V VIN=5V TA= +25°C CL=68µF Vflag 1 2V/div Iout 1 1A/div TA= +25°C CL=68µF Vflag 2 2V/div Iout 2 1A/div 2ms/div 2ms/div Channel 1 Short Circuit with Blanking Time and Recovery Channel 2 Short Circuit with Blanking Time and Recovery Vout 1 5V/div Vout 2 5V/div VIN=5V VIN=5V TA= +25°C Vflag 1 5V/div CL=68µF Iout 1 2A/div TA= +25°C Vflag 2 5V/div CL=68µF Iout 2 2A/div 20ms/div AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 20ms/div 7 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Typical Performance Characteristics (cont.) Channel 2 Power On Channel 1 Power On Vflag 1 5V/div Vflag 2 5V/div TA= +25°C TA= +25°C CL=68µF CL=68µF RL=3Ω Iout 1 500mA/div RL=3Ω Iout 2 500mA/div Ven 1 5V/div Ven 2 5V/div Vin 5V/div Vin 5V/div 1ms/div 1ms/div Channel 1 UVLO Increasing Channel 1 UVLO Decreasing TA= +25°C CL=68µF RL=3Ω Vin 2V/div Vin 2V/div TA= +25°C Iout 1 500mA/div CL=68µF RL=3Ω Iout 1 500mA/div 1ms/div 10ms/div Channel 2 UVLO Increasing Channel 2 UVLO Decreasing TA= +25°C Vin 2V/div CL=68µF Vin 2V/div TA= +25°C Iout 500mA/div CL=68µF RL=3Ω Iout 500mA/div RL=3Ω 1ms/div AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 10ms/div 8 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Typical Performance Characteristics (cont.) Channel 1 Enabled and Shorted with Channel 2 Disabled Channel 1 Disabled and Channel 2 Enabled Vout 1 5V/div Ven1 5V/div Vout 2 5V/div Vout 1 5V/div Vflag 1 5V/div TA= +25°C Ven2 5V/div CL=68µF TA= +25°C CL=68µF Iout 2 500mA/div Vout 2 5V/div 100ms/div 50ms/div Turn-Off Time vs Input Voltage 850 55 750 50 Turn-Off Time (us) Turn-On Time (us) Turn-On Time vs Input Voltage 650 550 450 CL=1µF RL=10Ω 350 CL=1µF RL=10Ω 45 TA= +25°C 40 35 30 TA= +25°C 25 250 1.5 2 2.5 3 3.5 4 4.5 5 5.5 1.5 6 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Input Voltage (V) Fall Time vs Input Voltage Rise Time vs Input Voltage 650 25 600 24 Fall Time (us) Rise Time (us) 550 500 450 CL=1µF 400 23 22 21 CL=1µF RL=10Ω RL=10Ω 20 TA= +25°C 350 TA= +25°C 19 300 2 2.5 3 3.5 4 4.5 5 5.5 6 2 AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Input Voltage (V) 9 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Typical Performance Characteristics (cont.) Supply Current, Output Disabled vs Ambient Temperature Supply Current, Output Enabled vs Ambient Temperature 0.9 Supply Current, Output Disabled (uA) Supply Current, Output Enabled (uA) 52 Vin=5.0V 47 Vin=5.5V 42 37 Vin=2.7V 32 Vin=3.3V Vin=5.5V 0.8 Vin=5.0V 0.7 0.6 Vin=3.3V 0.5 0.4 0.3 0.2 Vin=2.7V 0.1 0.0 27 -60 -40 -20 0 20 40 60 80 -60 100 -40 -20 0 20 40 60 80 100 Ambient Temperature (°C) Ambient Temperature (°C) Static Drain-Source On-State Resistance vs Ambient Temperature Short-Circuit Output Current vs Ambient Temperature 2.60 Short-Circuit Output Current (A) Static Drain-Source On-State Resistance (mΩ) 180 Vin=2.7V 170 160 150 140 130 Vin=3.3V 120 110 100 Vin=5V 90 CL=100µF 2.50 Vin=3.3V Vin=2.7V Vin=5.0V 2.40 2.30 2.20 2.10 Vin=5.5V 2.00 80 -60 -40 -20 0 20 40 60 80 -60 100 -40 -20 0 20 40 60 80 100 Ambient Temperature (°C) Ambient Temperature (°C) Threshold Trip Current vs Input Voltage Undervoltage Lockout vs Ambient Temperature 3.24 2.15 Threshold Trip Current (A) Undervoltage Lockout (V) 3.22 2.10 UVLO Rising 2.05 2.00 UVLO Falling 1.95 3.20 3.18 3.16 TA= +25°C 3.14 CL=68µF 3.12 3.10 3.08 1.90 -60 -40 -20 0 20 40 60 80 100 2.8 AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 3.3 3.8 4.3 4.8 5.3 Input Voltage (V) Ambient Temperature (°C) 10 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Typical Performance Characteristics (cont.) Current Limit Response vs Peak Current 45 Current Limit Response (us) 40 35 VIN = 5V 30 TA= +25°C 25 CL=68µF, 20 L=68µF 15 10 5 0 0 2 4 6 8 10 12 Peak Current (A) AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 11 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Application Information Power Supply Considerations A 0.01-μF to 0.1-μF X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic capacitor on the input (10-μF minimum) and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 0.01-μF to 0.1-μF ceramic capacitor improves the immunity of the device to short-circuit transients. Over-Current and Short Circuit Protection An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting. Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before VIN has been applied. The AP2186/AP2196 senses the short circuit and immediately clamps output current to a certain safe level namely ILIMIT. In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher current may flow for a very short period of time before the current limit function can react. After the current limit function has tripped (reached the over-current trip threshold), the device switches into current limiting mode and the current is clamped at ILIMIT. In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold (ITRIG) is reached or until the thermal limit of the device is exceeded. The AP2186/AP2196 is capable of delivering current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting mode and is set at ILIMIT. Note that when the output has been shorted to GND at extremely low temperature (< -30°C), a minimum 120-μF electrolytic capacitor on the output pin is recommended. A correct capacitor type with capacitor voltage rating and temperature characteristics must be properly chosen so that capacitance value does not drop too low at the extremely low temperature operation. A recommended capacitor should have temperature characteristics of less than 10% variation of capacitance change when operated at extremely low temp. Our recommended aluminum electrolytic capacitor type is Panasonic FC series. FLG Response When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms deglitch timeout. The FLG output remains low until both over-current and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout. The AP2186/AP2196 is designed to eliminate false over-current reporting without the need of external components to remove unwanted pulses. Power Dissipation and Junction Temperature The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: 2 PD = RDS(ON)× I Finally, calculate the junction temperature: TJ = PD x RJA + TA Where: TA = Ambient temperature C RJA = Thermal resistance PD = Total power dissipation Thermal Protection Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The AP2186/AP2196 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately 140°C due to excessive power dissipation in an over-current or short-circuit condition the internal thermal sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 25°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input power is removed. The FLG open-drain output is asserted when an over-temperature shutdown or over-current occurs with 7-ms deglitch. AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 12 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Application Information (cont.) Under-Voltage Lockout (UVLO) Under-voltage lockout function (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 1.9V, even if the switch is enabled. Whenever the input voltage falls below approximately 1.9V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. Host/Self-Powered HUBs Hosts and self-powered hubs (SPH) have a local power supply that powers the embedded functions and the downstream ports (see Figure 2). This power supply must provide from 5.25V to 4.75V to the board side of the downstream connection under both full-load and no-load conditions. Hosts and SPHs are required to have current-limit protection and must report over-current conditions to the USB controller. Typical SPHs are desktop PCs, monitors, printers, and stand-alone hubs. Downstream USB Ports Power Supply 3.3V 5V D+ DVBUS AP2186 2 IN OUT1 7 0.1uF USB Controller 0.1uF 8 FLG1 3 EN1 5 FLG2 4 EN2 OUT2 68uF D+ DVBUS 6 GND 1 GND 0.1uF 68uF GND Figure 2 Typical Two-Port USB Host / Self-Powered Hub Generic Hot-Plug Applications In many applications it may be necessary to remove modules or pc boards while the main unit is still operating. These are considered hot-plug applications. Such implementations require the control of current surges seen by the main power supply and the card being inserted. The most effective way to control these surges is to limit and slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply normally turns on. Due to the controlled rise times and fall times of the AP2186/AP2196, these devices can be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature of the AP2186/AP2196 also ensures that the switch is off after the card has been removed, and that the switch is off during the next insertion. By placing the AP2186/AP2196 between the VCC input and the rest of the circuitry, the input power reaches these devices first after insertion. The typical rise time of the switch is approximately 1ms, providing a slow voltage ramp at the output of the device. This implementation controls system surge current and provides a hot-plugging mechanism for any device. AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 13 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Ordering Information Part Number Package Code Packaging AP21X6SG-13 AP21X6MPG-13 S MP SO-8 MSOP-8EP Quantity 2500/Tape & Reel 2500/Tape & Reel 13” Tape and Reel Part Number Suffix -13 -13 Marking Information (1) SO-8 ( Top view ) 8 7 6 5 Logo Part Number 8 : Active Low 9 : Active High AP21X X YY WW X X 1 (2) 6 : 2 Channel G : Green YY : Year : 08, 09,10~ WW : Week : 01~52; 52 represents 52 and 53 week X : Internal Code 2 3 4 MSOP-8EP AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 14 of 17 www.diodes.com March 2013 © Diodes Incorporated AP2186/ AP2196 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 (1) Package Type: SO-8 E1 E Gauge Plane Seating Plane A1 L Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D (2) SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Package Type: MSOP-8EP D 4X 10 ° 0.25 D1 x E E2 Gauge Plane Seating Plane a y 1 4X 10 ° 8Xb e Detail C E3 A1 A3 L c A2 A D E1 See Detail C AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 15 of 17 www.diodes.com MSOP-8EP Dim Min Max Typ A 1.10 A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39 b 0.22 0.38 0.30 c 0.08 0.23 0.15 D 2.90 3.10 3.00 D1 1.60 2.00 1.80 E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E2 1.30 1.70 1.50 E3 2.85 3.05 2.95 e 0.65 L 0.40 0.80 0.60 a 0° 8° 4° x 0.750 y 0.750 All Dimensions in mm March 2013 © Diodes Incorporated AP2186/ AP2196 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package Type: SO-8 X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y (2) Package Type: MSOP-8EP X C Y G Y2 Dimensions C G X X1 Y Y1 Y2 Y1 X1 AP2186/ AP2196 Document number: DS31815 Rev. 3 - 2 16 of 17 www.diodes.com Value (in mm) 0.650 0.450 0.450 2.000 1.350 1.700 5.300 March 2013 © Diodes Incorporated AP2186/ AP2196 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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