TO -2 20A B PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 3. Applications • • • • AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tj = 25 °C; VGS = 10 V; Fig. 1 - - 100 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 263 W VGS = 10 V; ID = 25 A; Tj = 25 °C; 4.5 6.4 8.5 mΩ [1] Static characteristics RDSon drain-source on-state resistance Fig. 13; Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 10 V; ID = 25 A; VDS = 50 V; - 33 - nC total gate charge Fig. 14; Fig. 15 - 111 - nC VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; - - 219 mJ Avalanche Ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 Continious current limited by package. Scan or click this QR code to view the latest information for this product PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G S mbb076 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package PSMN8R5-100PS Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking code PSMN8R5-100PS PSMN8R5-100PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V ID drain current - 100 A VGS = 10 V; Tmb = 100 °C; Fig. 1 - 75 A pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 429 A IDM peak drain current PSMN8R5-100PS Product data sheet VGS = 10 V; Tj = 25 °C; Fig. 1 All information provided in this document is subject to legal disclaimers. 17 October 2013 [1] © NXP N.V. 2013. All rights reserved 2 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 263 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 100 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 429 A VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; - 219 mJ [1] Avalanche Ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 [1] Continious current limited by package. 003aak417 160 ID (A) 03aa16 120 Pder (%) 120 80 (1) 80 40 40 0 0 50 100 150 Tmb (°C) (1) Capped at 100A due to package Fig. 1. Continuous drain current as a function of mounting base temperature PSMN8R5-100PS Product data sheet 0 200 Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 17 October 2013 50 © NXP N.V. 2013. All rights reserved 3 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 003aak418 103 IAL (A) 102 (1) 10 (2) 1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time 003aak419 103 ID (A) Limit RDSon = V DS / ID tp =10 µ s 102 100 µ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 Fig. 4. 1 10 102 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 0.49 0.57 K/W PSMN8R5-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 17 October 2013 © NXP N.V. 2013. All rights reserved 4 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 003aah108 1 δ = 0.5 Zth(j-mb) (K/W) 0.2 10-1 0.1 0.05 0.02 10 -2 10 -3 P single shot tp 10-6 Fig. 5. 10-5 10-4 10-3 10-2 tp T δ= t T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2.4 3 4 V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V - - 4.5 V VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 100 V; VGS = 0 V; Tj = 100 °C - - 20 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; - 16.95 22.6 mΩ - 11.18 14.9 mΩ 4.5 6.4 8.5 mΩ 0.36 0.71 1.42 Ω Static characteristics V(BR)DSS VGS(th) VGSth Fig. 10; Fig. 11 Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 13; Fig. 12 RG gate resistance PSMN8R5-100PS Product data sheet f = 1 MHz All information provided in this document is subject to legal disclaimers. 17 October 2013 © NXP N.V. 2013. All rights reserved 5 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 Symbol Parameter Conditions Min Typ Max Unit total gate charge ID = 25 A; VDS = 50 V; VGS = 10 V; - 111 - nC QGS gate-source charge Fig. 14; Fig. 15 - 24 - nC QGS(th) pre-threshold gatesource charge - 16 - nC QGS(th-pl) post-threshold gatesource charge - 8 - nC QGD gate-drain charge - 33 - nC VGS(pl) gate-source plateau voltage ID = 15 A; VDS = 50 V; Fig. 14; Fig. 15 - 4.4 - V Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; - 5512 - pF - 380 - pF - 256 - pF Dynamic characteristics QG(tot) Tj = 25 °C; Fig. 16; Fig. 17 Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 17 Crss reverse transfer capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; td(on) turn-on delay time VDS = 50 V; RL = 2 Ω; VGS = 10 V; - 20 - ns tr rise time RG(ext) = 5 Ω - 35 - ns td(off) turn-off delay time - 87 - ns tf fall time - 43 - ns Tj = 25 °C; Fig. 16; Fig. 17 Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18 - 0.82 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 53 - ns Qr recovered charge VDS = 50 V - 124 - nC PSMN8R5-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 17 October 2013 © NXP N.V. 2013. All rights reserved 6 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 003aah739 240 6 VGS (V) = 10 ID (A) 003aak421 20 RDSon (mΩ ) 5.5 180 15 5 120 10 60 5 4.5 0 4 0 2 4 0 6 VDS(V) Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. 003aak425 5 10 15 V (V) 20 GS Drain-source on-state resistance as a function of gate-source voltage; typical values Output characteristics; drain current as a function of drain-source voltage; typical values 120 0 003aah742 250 ID (A) gfs (S) 200 90 150 60 100 30 Tj = 25 °C 50 0 Fig. 8. Tj = 175 °C 0 80 160 240 320 ID (A) 0 400 Forward transconductance as a function of drain current; typical values PSMN8R5-100PS Product data sheet Fig. 9. 0 2 6 8 VGS (V) 10 Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 17 October 2013 4 © NXP N.V. 2013. All rights reserved 7 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 003aah027 5 VGS(th) (V) ID (A) max 4 10-2 3 typ 10-3 2 min 10-4 0 60 120 T j (°C) 10-6 180 Fig. 10. Gate-source threshold voltage as a function of junction temperature 003aag818 3 20 1.8 15 1.2 10 0.6 5 60 120 Tj (°C) 0 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature PSMN8R5-100PS Product data sheet max 2 4 6 VGS (V) Fig. 11. Sub-threshold drain current as a function of gate-source voltage 2.4 0 0 003aak422 25 RDSon (mΩ ) a 0 -60 typ min 10-5 1 0 -60 003aah028 10-1 4.5 5.5 5 6 VGS (V) = 10 0 80 160 ID (A) 240 Fig. 13. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 17 October 2013 © NXP N.V. 2013. All rights reserved 8 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 003aak426 10 VGS (V) VDS ID 8 VGS(pl) 20 V 6 80 V VGS(th) VDS = 50 V 4 VGS QGS1 QGS2 QGS 2 QGD QG(tot) 003aaa508 0 0 40 80 QG (nC) Fig. 15. Gate charge waveform definitions 120 Fig. 14. Gate-source voltage as a function of gate charge; typical values 003aak424 12000 003aak423 104 C (pF) C (pF) Ciss Ciss 8000 103 Crss 4000 Coss Crss 0 0 4 8 VGS (V) 102 10-1 12 Fig. 16. Input and reverse transfer capacitances as a function of gate-source voltage, typical values PSMN8R5-100PS Product data sheet 1 10 VDS (V) 102 Fig. 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 17 October 2013 © NXP N.V. 2013. All rights reserved 9 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 003aah749 400 IS (A) 320 240 160 Tj = 175° C 80 0 Tj = 25 °C 0 0.4 0.8 1.2 V SD (V) 1.6 Fig. 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN8R5-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 17 October 2013 © NXP N.V. 2013. All rights reserved 10 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 19. Package outline TO-220AB (SOT78) PSMN8R5-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 17 October 2013 © NXP N.V. 2013. All rights reserved 11 / 14 PSMN8R5-100PS NXP Semiconductors N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 October 2013 PSMN8R5-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 17 October 2013 © NXP N.V. 2013. All rights reserved 14 / 14