Data Sheet

TO
-2
20A
B
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
17 October 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
•
•
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
3. Applications
•
•
•
•
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tj = 25 °C; VGS = 10 V; Fig. 1
-
-
100
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
263
W
VGS = 10 V; ID = 25 A; Tj = 25 °C;
4.5
6.4
8.5
mΩ
[1]
Static characteristics
RDSon
drain-source on-state
resistance
Fig. 13; Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
-
33
-
nC
total gate charge
Fig. 14; Fig. 15
-
111
-
nC
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
-
-
219
mJ
Avalanche Ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
[1]
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
Continious current limited by package.
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
S
mbb076
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN8R5-100PS
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN8R5-100PS
PSMN8R5-100PS
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
-20
20
V
ID
drain current
-
100
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
-
75
A
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
429
A
IDM
peak drain current
PSMN8R5-100PS
Product data sheet
VGS = 10 V; Tj = 25 °C; Fig. 1
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2 / 14
PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Symbol
Parameter
Conditions
Min
Max
Unit
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
263
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
-
100
A
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
429
A
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
-
219
mJ
[1]
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
[1]
Continious current limited by package.
003aak417
160
ID
(A)
03aa16
120
Pder
(%)
120
80
(1)
80
40
40
0
0
50
100
150
Tmb (°C)
(1) Capped at 100A due to package
Fig. 1.
Continuous drain current as a function of
mounting base temperature
PSMN8R5-100PS
Product data sheet
0
200
Fig. 2.
0
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aak418
103
IAL
(A)
102
(1)
10
(2)
1
10-3
Fig. 3.
10-2
10-1
1
tAL (ms)
10
Avalanche rating; avalanche current as a function of avalanche time
003aak419
103
ID
(A)
Limit RDSon = V DS / ID
tp =10 µ s
102
100 µ s
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
Fig. 4.
1
10
102
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.49
0.57
K/W
PSMN8R5-100PS
Product data sheet
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah108
1
δ = 0.5
Zth(j-mb)
(K/W)
0.2
10-1
0.1
0.05
0.02
10
-2
10
-3
P
single shot
tp
10-6
Fig. 5.
10-5
10-4
10-3
10-2
tp
T
δ=
t
T
10-1
1
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2.4
3
4
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
-
-
V
-
-
4.5
V
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.02
1
µA
VDS = 100 V; VGS = 0 V; Tj = 100 °C
-
-
20
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
16.95
22.6
mΩ
-
11.18
14.9
mΩ
4.5
6.4
8.5
mΩ
0.36
0.71
1.42
Ω
Static characteristics
V(BR)DSS
VGS(th)
VGSth
Fig. 10; Fig. 11
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 13; Fig. 12
RG
gate resistance
PSMN8R5-100PS
Product data sheet
f = 1 MHz
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
-
111
-
nC
QGS
gate-source charge
Fig. 14; Fig. 15
-
24
-
nC
QGS(th)
pre-threshold gatesource charge
-
16
-
nC
QGS(th-pl)
post-threshold gatesource charge
-
8
-
nC
QGD
gate-drain charge
-
33
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 15 A; VDS = 50 V; Fig. 14; Fig. 15
-
4.4
-
V
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
-
5512
-
pF
-
380
-
pF
-
256
-
pF
Dynamic characteristics
QG(tot)
Tj = 25 °C; Fig. 16; Fig. 17
Coss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 17
Crss
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
td(on)
turn-on delay time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
-
20
-
ns
tr
rise time
RG(ext) = 5 Ω
-
35
-
ns
td(off)
turn-off delay time
-
87
-
ns
tf
fall time
-
43
-
ns
Tj = 25 °C; Fig. 16; Fig. 17
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18
-
0.82
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
53
-
ns
Qr
recovered charge
VDS = 50 V
-
124
-
nC
PSMN8R5-100PS
Product data sheet
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah739
240
6
VGS (V) = 10
ID
(A)
003aak421
20
RDSon
(mΩ )
5.5
180
15
5
120
10
60
5
4.5
0
4
0
2
4
0
6
VDS(V)
Tj = 25 °C; tp = 300 μs
Fig. 6.
Fig. 7.
003aak425
5
10
15 V (V) 20
GS
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Output characteristics; drain current as a
function of drain-source voltage; typical values
120
0
003aah742
250
ID
(A)
gfs
(S)
200
90
150
60
100
30
Tj = 25 °C
50
0
Fig. 8.
Tj = 175 °C
0
80
160
240
320
ID (A)
0
400
Forward transconductance as a function of
drain current; typical values
PSMN8R5-100PS
Product data sheet
Fig. 9.
0
2
6
8
VGS (V)
10
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah027
5
VGS(th)
(V)
ID
(A)
max
4
10-2
3
typ
10-3
2
min
10-4
0
60
120
T j (°C)
10-6
180
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
003aag818
3
20
1.8
15
1.2
10
0.6
5
60
120
Tj (°C)
0
180
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN8R5-100PS
Product data sheet
max
2
4
6
VGS (V)
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
2.4
0
0
003aak422
25
RDSon
(mΩ )
a
0
-60
typ
min
10-5
1
0
-60
003aah028
10-1
4.5
5.5
5
6
VGS (V) = 10
0
80
160
ID (A)
240
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aak426
10
VGS
(V)
VDS
ID
8
VGS(pl)
20 V
6
80 V
VGS(th)
VDS = 50 V
4
VGS
QGS1
QGS2
QGS
2
QGD
QG(tot)
003aaa508
0
0
40
80
QG (nC)
Fig. 15. Gate charge waveform definitions
120
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aak424
12000
003aak423
104
C
(pF)
C
(pF)
Ciss
Ciss
8000
103
Crss
4000
Coss
Crss
0
0
4
8
VGS (V)
102
10-1
12
Fig. 16. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
PSMN8R5-100PS
Product data sheet
1
10
VDS (V)
102
Fig. 17. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
003aah749
400
IS
(A)
320
240
160
Tj = 175° C
80
0
Tj = 25 °C
0
0.4
0.8
1.2
V SD (V)
1.6
Fig. 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN8R5-100PS
Product data sheet
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
e
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig. 19. Package outline TO-220AB (SOT78)
PSMN8R5-100PS
Product data sheet
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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PSMN8R5-100PS
Product data sheet
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damage to the device. Limiting values are stress ratings only and (proper)
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PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
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TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
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PSMN8R5-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
13 / 14
PSMN8R5-100PS
NXP Semiconductors
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
Package outline ................................................... 11
12
12.1
12.2
12.3
12.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 October 2013
PSMN8R5-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
14 / 14