PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction losses • Improved dynamic avalanche performance • Suitable for standard level gate drive 1.3 Applications • DC-to-DC converters • Load switching • Motor control • Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 68 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 170 W Tj junction temperature -55 - 175 °C - 19.4 25 mΩ - 10.8 13.9 mΩ - 17 - nC [1] Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; Fig. 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; [2] Fig. 13 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 15; Fig. 14 Scan or click this QR code to view the latest information for this product PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. Symbol Parameter Conditions Min Typ Max Unit QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V; - 59 - nC - - 128 mJ Fig. 14; Fig. 15 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] [2] VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω Continuous current is limited by package Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 TO-220AB (SOT78) 3. Ordering information Table 3. Ordering information Type number PSMN013-100PS Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Marking Table 4. Marking codes Type number Marking code PSMN013-100PS PSMN013-100PS PSMN013-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 2 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 47 A VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 68 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 272 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 170 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 68 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 272 A VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; - 128 mJ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] PSMN013-100PS Product data sheet Vsup ≤ 100 V; unclamped; RGS = 50 Ω Continuous current is limited by package All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 3 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 003aac512 80 ID (A) 03aa16 120 Pder (%) 60 80 40 40 20 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 Continuous drain current as a function of mounting base temperature Fig. 2. 0 50 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature 003aae168 103 ID (A) Limit RDSon = VDS / ID 2 10 tp =10 µs 100 µs 10 DC 1 1 ms 10 ms 100 ms 10- 1 1 Fig. 3. 102 10 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.5 0.9 K/W PSMN013-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 4 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Conditions vertical in free air Min Typ Max Unit - 60 - K/W 003a a d575 1 Zth (j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 10-2 0.02 P δ= s ingle s hot 10-3 tp 10-4 1e -6 Fig. 4. tp T 10-5 10-4 10-3 10-2 10-1 t T 1 10 tp (s ) Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - - V ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V 2 3 4 V - - 4.6 V VDS = 100 V; VGS = 0 V; Tj = 125 °C - - 100 µA VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.06 2 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 10 V; ID = 15 A; Tj = 100 °C; - 19.4 25 mΩ Static characteristics V(BR)DSS VGS(th) Fig. 10 ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 10; Fig. 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance PSMN013-100PS Product data sheet Fig. 12 All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 5 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; ID = 15 A; Tj = 175 °C; - 29.5 38.9 mΩ - 10.8 13.9 mΩ f = 1 MHz - 1 - Ω ID = 25 A; VDS = 50 V; VGS = 10 V; - 59 - nC ID = 0 A; VDS = 0 V; VGS = 10 V - 47.6 - nC ID = 25 A; VDS = 50 V; VGS = 10 V; - 13.8 - nC - 9.2 - nC - 4.6 - nC - 17 - nC Fig. 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; [1] Fig. 13 RG internal gate resistance (AC) Dynamic characteristics QG(tot) total gate charge Fig. 14; Fig. 15 QGS gate-source charge Fig. 14; Fig. 15 QGS(th) pre-threshold gatesource charge QGS(th-pl) post-threshold gatesource charge QGD gate-drain charge ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 15 ID = 25 A; VDS = 50 V; VGS = 10 V; Fig. 15; Fig. 14 VGS(pl) gate-source plateau voltage VDS = 50 V; Fig. 15; Fig. 14 - 4.4 - V Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; - 3195 - pF Coss output capacitance Tj = 25 °C; Fig. 16 - 221 - pF Crss reverse transfer capacitance - 136 - pF td(on) turn-on delay time VDS = 50 V; RL = 2 Ω; VGS = 10 V; - 20.7 - ns tr rise time RG(ext) = 4.7 Ω; Tj = 25 °C - 25 - ns td(off) turn-off delay time - 52.5 - ns tf fall time - 24 - ns Source-drain diode VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; - 52 - ns Qr recovered charge VDS = 50 V - 109 - nC [1] PSMN013-100PS Product data sheet Measured 3 mm from package. All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 6 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 003a a d577 200 20 ID (A) C is s C (pF) 6 160 003a a d580 5000 10 4000 5.5 120 3000 5 C rs s 80 0 Fig. 5. 2000 4.5 40 VGS (V) = 4 0 1 2 3 V DS (V) 1000 4 Output characteristics: drain current as a Fig. 6. function of drain-source voltage; typical values 003a a d585 45 0 2 4 6 8 10 VGS (V) Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003a a d586 150 gfs (S ) 120 RDS on (mΩ) 35 90 25 60 15 5 Fig. 7. 30 4 8 12 16 VGS (V) 0 20 Drain-source on-state resistance as a function of gate-source voltage; typical values PSMN013-100PS Product data sheet Fig. 8. 0 30 90 12 0 150 I D (A) Forward transconductance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 10 August 2012 60 © NXP B.V. 2012. All rights reserved 7 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 003a a d582 100 003aad280 5 ID (A) VGS(th) (V) 80 4 60 3 max typ Tj = 1 75 °C 2 40 1 20 0 Fig. 9. min 25 °C 0 2 4 VGS (V) 0 - 60 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values ID (A) min 10- 2 typ 60 120 Tj (°C) 180 Fig. 10. Gate-source threshold voltage as a function of junction temperature 03aa35 10- 1 0 003aad774 3.2 a max 2.4 10- 3 1.6 10- 4 0.8 10- 5 10- 6 0 2 4 VGS (V) 0 -60 6 Fig. 11. Sub-threshold drain current as a function of gate-source voltage PSMN013-100PS Product data sheet 0 60 120 Tj (°C) 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 8 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 003aad578 30 RDSon (mΩ) 003a a d583 10 VGS (V) VGS (V) = 4.5 8 25 V DS = 50V 6 20 4 5 15 10 0 20 40 2 20 10 6 60 ID (A) 0 80 Fig. 13. Drain-source on-state resistance as a function of drain current; typical values 0 15 30 45 003aad581 Ciss C (pF) ID 60 Fig. 14. Gate-source voltage as a function of gate charge; typical values 104 VDS QG (nC) 103 VGS(pl) Coss VGS(th) VGS QGS1 QGS Crss 102 QGS2 QGD QG(tot) 003aaa508 10 10- 2 Fig. 15. Gate charge waveform definitions 10- 1 1 10 VDS (V) 102 Fig. 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PSMN013-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 9 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 003a a d584 100 IS (A) 80 60 40 Tj = 175 °C 20 0 25 °C 0 0 .3 0.6 0.9 VS D (V) 1.2 Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN013-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 10 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 8. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 18. TO-220AB (SOT78) PSMN013-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 11 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PSMN013-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 13 / 14 PSMN013-100PS NXP Semiconductors N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................3 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Package outline ................................................... 11 9 9.1 9.2 9.3 9.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 August 2012 PSMN013-100PS Product data sheet All information provided in this document is subject to legal disclaimers. 10 August 2012 © NXP B.V. 2012. All rights reserved 14 / 14