ds31667

DMS2120LFWB
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR®
SUPER BARRIER RECTIFIER
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
Low On-Resistance
•
95mΩ @VGS = -4.5V
•
120mΩ @VGS = -2.5V
•
150mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low VF Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
•
Case: U-DFN3020-8 Type B
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.011 grams (approximate)
S
K
G
U-DFN3020-8
Type B
Bottom View
A
K
A
D
S
D
G
A
D
Top View
K
Bottom View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMS2120LFWB-7
Notes:
Case
DFN3020B-8
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MF = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
MF YM
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
2010
X
Mar
3
2011
Y
Apr
4
May
5
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep
9
2016
D
Oct
O
2017
E
Nov
N
Dec
D
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
1 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMS2120LFWB
NEW PRODUCT
Maximum Ratings – TOTAL DEVICE (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.5
85
-55 to +150
Unit
W
°C/W
°C
Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-2.9
-10
Units
V
V
A
A
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
Value
Unit
20
V
14
1
V
A
IFSM
3
A
Maximum Ratings – SBR – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
±100
±800
V
μA
IGSS
nA
VGS(th)
-0.45
⎯
-1.3
V
RDS (ON)
⎯
⎯
⎯
70
84
100
95
120
150
mΩ
|Yfs|
VSD
⎯
⎯
8
0.42
⎯
-1.2
S
V
Ciss
Coss
Crss
⎯
⎯
⎯
632
65
54
⎯
⎯
⎯
pF
pF
pF
Test Condition
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
VDS = -5V, ID = -2.8A
VGS = 0V, IS = -1.0A
VDS = -10V, VGS = 0V
f = 1.0MHz
Electrical Characteristics – SBR – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Symbol
V(BR)R
Forward Voltage
VF
Reverse Current (Note 7)
IR
Notes:
Min
20
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.45
0.52
80
Unit
V
V
μA
Test Condition
IR = 1mA
IF = 0.5A
IF = 1.0A
VR = 20V
5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
2 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMS2120LFWB
Q1, P-CHANNEL MOSFET
10
10
VGS = -8.0V
VDS = -5V
VGS = -4.5V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
8
VGS = -2.5V
VGS = -2.0V
6
VGS = -1.5V
4
VGS = -1.0V
0
0
4
TA = 150°C
VGS = -1.2V
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0.1
0.06
VGS = -2.5V
VGS = -4.5V
0.04
0.02
0
0
1
2
3
4
5
6
7
-ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.12
0.1
VGS = -2.5V
ID = -2A
VGS = -4.5V
ID = -5A
1.0
0.8
TA = 150°C
TA = 125°C
0.08
TA = 85°C
0.06
TA = 25°C
0.04
TA = -55°C
0.02
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.4
0.6
-50
2
0.14
8
1.6
1.2
1
1.5
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.12
VGS = -1.8V
TA = 85°C
TA = -55°C
0
0.5
0.14
0.08
TA = 125°C
TA = 25°C
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
6
2
2
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
8
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1
2
3
4
5
6
7
-ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
8
0.11
0.09
VGS = -2.5V
ID = -2A
0.07
VGS = -4.5V
ID = -5A
0.05
0.03
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
3 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMS2120LFWB
10,000
1
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
C, CAPACITANCE (pF)
1,000
Ciss
100
Coss
Crss
10
0
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Capacitance
20
0.9
0.8
0.7
0.6
ID = -1mA
0.5
ID = -250µA
0.4
0.3
0.2
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
10
-IS, SOURCE CURRENT (A)
NEW PRODUCT
f = 1MHz
8
6
TA = 25°C
4
2
0
0
0.2 0.4 0.6 0.8
1
1.2
1.4 1.6
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
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www.diodes.com
September 2012
© Diodes Incorporated
DMS2120LFWB
D1, SBR
IF, INSTANTANEOUS FORWARD CURRENT (A)
0.7
PD, POWER DISSIPATION (W)
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 10 Forward Power Dissipation
0.1
TA = 125°C
TA = 85°C
0.01
TA = 25°C
0.001
0.0001
0
TA = -55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 11 Typical Forward Characteristics
TA = 150°C
1,000
T A = 125°C
1,000
C, CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE CURRENT(uA)
TA = 150°C
10,000
10,000
100
TA = 85°C
10
TA = 25°C
1
f = 1MHz
100
10
0.1
0.01
0
1
0.1
5
10
15
20
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 12 Typical Reverse Characteristics
1.6
1.4
1.2
Note 5
1.0
0.8
0.6
0.4
0.2
0
25
1
10
100
VR, DC REVERSE VOLTAGE (V)
Fig. 13 Total Capacitance vs. Reverse Voltage
150
TA, DERATED AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
NEW PRODUCT
0.6
1
125
100
75
50
25
0
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 14 Forward Current Derating Curve
175
0
10
20
30
VR, DC REVERSE VOLTAGE (V)
Fig. 15 Operating Temperature Derating
40
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
5 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMS2120LFWB
Package Outline Dimensions
NEW PRODUCT
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A3
A1
D
D4
D4
D2
E
E2
b
Z
e
L
U-DFN3020-8
Type B
Dim Min Max Typ
A
0.77 0.83 0.80
A1
0
0.05 0.02
A3
0.15
b
0.25 0.35 0.30
D
2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e
0.65
E
1.95 2.075 2.00
E2 0.43 0.63 0.53
L
0.25 0.35 0.30
Z
0.375
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
X1
Y1
a
G
b
Y2
X2
Dimensions
a
b
C
G
X1
X2
Y1
Y2
Value (in mm)
0.09
0.365
0.65
0.285
0.4
1.12
0.5
0.73
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
6 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMS2120LFWB
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
7 of 7
www.diodes.com
September 2012
© Diodes Incorporated
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