Data Sheet

TO
-2
20A
B
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
7 June 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic power supply equipment.
2. Features and benefits
•
•
•
•
High efficiency due to low switching and conduction losses
Improved dynamic avalanche performance
Suitable for standard level gate drive
TO-220 package can be mounted to heatsink
3. Applications
•
•
•
AC-to-DC power supply
Synchronous rectification
Motor control
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
120
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
70
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
405
W
VGS = 10 V; ID = 25 A; Tj = 25 °C;
4
5.7
6.7
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
-
61.9
-
nC
total gate charge
Fig. 14; Fig. 15
-
207.1
-
nC
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
-
-
532
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
drain
Simplified outline
Graphic symbol
D
mb
G
S
mbb076
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN6R3-120PS
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
120
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
120
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
70
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
-
70
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
280
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
405
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
-
70
A
Source-drain diode
IS
source current
PSMN6R3-120PS
Product data sheet
Tmb = 25 °C
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
Symbol
Parameter
Conditions
Min
Max
Unit
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
280
A
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
-
532
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
003aaj851
80
ID
(A)
03aa16
120
Pder
(%)
60
80
40
40
20
0
Fig. 1.
0
30
60
90
120
150
Tj (°C)
Continuous drain current as a function of
mounting base temperature
IAL
(A)
0
180
Fig. 2.
0
50
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
003aaj852
102
(1)
10
(2)
1
10-3
Fig. 3.
10-2
10-1
1
tAL (ms)
10
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
PSMN6R3-120PS
Product data sheet
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
003aaj850
103
ID
(A)
Limit RDSon = VDS / ID
tp = 10 us
102
100 us
10
DC
1 ms
1
10 ms
100 ms
10-1
Fig. 4.
1
102
10
103
VDS (V)
Safe operating area; continuous and peak drain current as a function of drain-source voltage
8. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.3
0.37
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
-
60
-
K/W
vertical in free air
003aaj849
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
P
10-2 0.02
δ=
tp
T
single shot
tp
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
10-1
t
T
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN6R3-120PS
Product data sheet
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
120
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
108
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
3
4
V
1
-
-
V
-
-
4.6
V
VDS = 120 V; VGS = 0 V; Tj = 25 °C
-
0.1
1
µA
VDS = 120 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
4
5.7
6.7
mΩ
-
16.5
19.4
mΩ
f = 1 MHz
0.44
0.88
1.76
Ω
Static characteristics
V(BR)DSS
VGS(th)
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10; Fig. 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
RG
internal gate
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 60 V; VGS = 10 V;
-
207.1
-
nC
QGS
gate-source charge
Fig. 14; Fig. 15
-
43.2
-
nC
QGS(th)
pre-threshold gatesource charge
-
29.8
-
nC
QGS(th-pl)
post-threshold gatesource charge
-
13.4
-
nC
QGD
gate-drain charge
-
61.9
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15
-
4.3
-
V
Ciss
input capacitance
VDS = 60 V; VGS = 0 V; f = 1 MHz;
-
11384 -
pF
Coss
output capacitance
Tj = 25 °C; Fig. 16
-
534
-
pF
Crss
reverse transfer
capacitance
-
358
-
pF
td(on)
turn-on delay time
VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;
-
42.1
-
ns
tr
rise time
RG(ext) = 5 Ω; Tj = 25 °C
-
58.2
-
ns
PSMN6R3-120PS
Product data sheet
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
Symbol
Parameter
td(off)
tf
Conditions
Min
Typ
Max
Unit
turn-off delay time
-
142.1
-
ns
fall time
-
67.7
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.79
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
76.1
-
ns
Qr
recovered charge
VDS = 60 V
-
264.2
-
nC
003aaj844
120
ID
(A)
6
10
100
5
80
16
VGS (V) = 4.5
60
12
40
8
20
0
Fig. 6.
003aaj843
24
RDSon
(mΩ )
20
5.5
4
4
0
1
2
3
0
4
VDS(V)
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
003aaj841
250
0
8
12
16
VGS (V)
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaj842
100
gfs
(S)
ID
(A)
200
80
150
60
100
40
50
20
0
Fig. 8.
4
0
20
40
60
80
ID (A)
Forward transconductance as a function of
drain current; typical values
PSMN6R3-120PS
Product data sheet
0
100
Fig. 9.
Tj = 175 ° C
0
4
VGS (V)
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
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2
Tj = 25 ° C
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
003aad280
5
ID
(A)
VGS(th)
(V)
4
typ
max
10- 3
typ
2
min
10- 2
max
3
10- 4
min
10- 5
1
0
- 60
0
60
120
Tj (°C)
10- 6
180
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
a
RDSon
(mΩ )
4.5
20
0
2
4
VGS (V)
6
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
003aaj848
25
003aak793
3
2.4
1.8
15
10
1.2
VGS (V) = 5V
5.5
5
0
03aa35
10- 1
7
0.6
10
0
20
40
60
80
100
0
-60
120
ID (A)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN6R3-120PS
Product data sheet
-30
0
30
60
90
120 150
Tj (°C)
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
003aaj845
10
VDS
VGS
(V)
8
ID
VGS(pl)
96 V
60 V
VDS = 24 V
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
QGD
QG(tot)
2
003aaa508
0
Fig. 14. Gate charge waveform definitions
0
50
100
150
200
250
QG (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aaj846
1E+5
C
(pF)
IS
(A)
Ciss
80
104
10
60
Coss
3
003aaj847
100
40
Crss
102
10
10-1
Tj = 175° C
20
1
10
VDS (V)
0
102
0
0.3
Tj = 25 °C
0.6
0.9
VSD (V)
1.2
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source (diode forward) current as a function of
as a function of drain-source voltage; typical
source-drain (diode forward) voltage; typical
values
values
PSMN6R3-120PS
Product data sheet
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
10. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
e
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig. 18. Package outline TO-220AB (SOT78)
PSMN6R3-120PS
Product data sheet
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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Please consult the most recently issued document before initiating or
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PSMN6R3-120PS
Product data sheet
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
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Corporation.
PSMN6R3-120PS
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PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
12. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Limiting values .......................................................2
8
Thermal characteristics .........................................4
9
Characteristics ....................................................... 5
10
Package outline ..................................................... 9
11
11.1
11.2
11.3
11.4
Legal information .................................................10
Data sheet status ............................................... 10
Definitions ...........................................................10
Disclaimers .........................................................10
Trademarks ........................................................ 11
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 7 June 2013
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
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