Data Sheet

TO
-2
20A
B
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
7 June 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic power supply equipment.
2. Features and benefits
•
•
•
•
High efficiency due to low switching and conduction losses
Improved dynamic avalanche performance
Suitable for standard level gate drive
TO-220 package can be mounted to heatsink
3. Applications
•
•
•
AC-to-DC power supply
Synchronous rectification
Motor control
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
120
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
70
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
405
W
VGS = 10 V; ID = 25 A; Tj = 25 °C;
4
5.7
6.7
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
-
61.9
-
nC
total gate charge
Fig. 14; Fig. 15
-
207.1
-
nC
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
-
-
532
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
Scan or click this QR code to view the latest information for this product
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
drain
Simplified outline
Graphic symbol
D
mb
G
S
mbb076
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN6R3-120PS
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
120
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
120
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
70
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
-
70
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
280
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
405
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
-
70
A
Source-drain diode
IS
source current
PSMN6R3-120PS
Product data sheet
Tmb = 25 °C
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
2 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
Symbol
Parameter
Conditions
Min
Max
Unit
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
280
A
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
-
532
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
003aaj851
80
ID
(A)
03aa16
120
Pder
(%)
60
80
40
40
20
0
Fig. 1.
0
30
60
90
120
150
Tj (°C)
Continuous drain current as a function of
mounting base temperature
IAL
(A)
0
180
Fig. 2.
0
50
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
003aaj852
102
(1)
10
(2)
1
10-3
Fig. 3.
10-2
10-1
1
tAL (ms)
10
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
3 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
003aaj850
103
ID
(A)
Limit RDSon = VDS / ID
tp = 10 us
102
100 us
10
DC
1 ms
1
10 ms
100 ms
10-1
Fig. 4.
1
102
10
103
VDS (V)
Safe operating area; continuous and peak drain current as a function of drain-source voltage
8. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.3
0.37
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
-
60
-
K/W
vertical in free air
003aaj849
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
P
10-2 0.02
δ=
tp
T
single shot
tp
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
10-1
t
T
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
4 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
120
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
108
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
3
4
V
1
-
-
V
-
-
4.6
V
VDS = 120 V; VGS = 0 V; Tj = 25 °C
-
0.1
1
µA
VDS = 120 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
4
5.7
6.7
mΩ
-
16.5
19.4
mΩ
f = 1 MHz
0.44
0.88
1.76
Ω
Static characteristics
V(BR)DSS
VGS(th)
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10; Fig. 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
RG
internal gate
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 60 V; VGS = 10 V;
-
207.1
-
nC
QGS
gate-source charge
Fig. 14; Fig. 15
-
43.2
-
nC
QGS(th)
pre-threshold gatesource charge
-
29.8
-
nC
QGS(th-pl)
post-threshold gatesource charge
-
13.4
-
nC
QGD
gate-drain charge
-
61.9
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15
-
4.3
-
V
Ciss
input capacitance
VDS = 60 V; VGS = 0 V; f = 1 MHz;
-
11384 -
pF
Coss
output capacitance
Tj = 25 °C; Fig. 16
-
534
-
pF
Crss
reverse transfer
capacitance
-
358
-
pF
td(on)
turn-on delay time
VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;
-
42.1
-
ns
tr
rise time
RG(ext) = 5 Ω; Tj = 25 °C
-
58.2
-
ns
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
5 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
Symbol
Parameter
td(off)
tf
Conditions
Min
Typ
Max
Unit
turn-off delay time
-
142.1
-
ns
fall time
-
67.7
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.79
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
76.1
-
ns
Qr
recovered charge
VDS = 60 V
-
264.2
-
nC
003aaj844
120
ID
(A)
6
10
100
5
80
16
VGS (V) = 4.5
60
12
40
8
20
0
Fig. 6.
003aaj843
24
RDSon
(mΩ )
20
5.5
4
4
0
1
2
3
0
4
VDS(V)
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
003aaj841
250
0
8
12
16
VGS (V)
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaj842
100
gfs
(S)
ID
(A)
200
80
150
60
100
40
50
20
0
Fig. 8.
4
0
20
40
60
80
ID (A)
Forward transconductance as a function of
drain current; typical values
PSMN6R3-120PS
Product data sheet
0
100
Fig. 9.
Tj = 175 ° C
0
4
VGS (V)
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
All information provided in this document is subject to legal disclaimers.
7 June 2013
2
Tj = 25 ° C
© NXP B.V. 2013. All rights reserved
6 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
003aad280
5
ID
(A)
VGS(th)
(V)
4
typ
max
10- 3
typ
2
min
10- 2
max
3
10- 4
min
10- 5
1
0
- 60
0
60
120
Tj (°C)
10- 6
180
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
a
RDSon
(mΩ )
4.5
20
0
2
4
VGS (V)
6
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
003aaj848
25
003aak793
3
2.4
1.8
15
10
1.2
VGS (V) = 5V
5.5
5
0
03aa35
10- 1
7
0.6
10
0
20
40
60
80
100
0
-60
120
ID (A)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN6R3-120PS
Product data sheet
-30
0
30
60
90
120 150
Tj (°C)
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
7 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
003aaj845
10
VDS
VGS
(V)
8
ID
VGS(pl)
96 V
60 V
VDS = 24 V
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
QGD
QG(tot)
2
003aaa508
0
Fig. 14. Gate charge waveform definitions
0
50
100
150
200
250
QG (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aaj846
1E+5
C
(pF)
IS
(A)
Ciss
80
104
10
60
Coss
3
003aaj847
100
40
Crss
102
10
10-1
Tj = 175° C
20
1
10
VDS (V)
0
102
0
0.3
Tj = 25 °C
0.6
0.9
VSD (V)
1.2
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source (diode forward) current as a function of
as a function of drain-source voltage; typical
source-drain (diode forward) voltage; typical
values
values
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
8 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
10. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
e
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig. 18. Package outline TO-220AB (SOT78)
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
9 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
11. Legal information
11.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
11.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PSMN6R3-120PS
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
10 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
11.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
11 / 12
PSMN6R3-120PS
NXP Semiconductors
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
12. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Limiting values .......................................................2
8
Thermal characteristics .........................................4
9
Characteristics ....................................................... 5
10
Package outline ..................................................... 9
11
11.1
11.2
11.3
11.4
Legal information .................................................10
Data sheet status ............................................... 10
Definitions ...........................................................10
Disclaimers .........................................................10
Trademarks ........................................................ 11
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 June 2013
PSMN6R3-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 June 2013
© NXP B.V. 2013. All rights reserved
12 / 12