Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm ■ Features Symbol Collector to 2SD1350 base voltage 2SD1350A Collector to 2SD1350 Ratings * 4.5±0.1 0.55±0.1 400 VCBO 600 400 VCEO 500 VEBO 5 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Symbol 2SD1350 voltage 2SD1350A Collector to emitter 2SD1350 voltage 2SD1350A 1 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Collector to base 2 V Emitter to base voltage 1cm2 0.45±0.05 V 3 emitter voltage 2SD1350A 1.0 0.85 Unit 4.1±0.2 (Ta=25˚C) 1.25±0.05 Parameter 2.4±0.2 2.0±0.2 3.5±0.1 ■ Absolute Maximum Ratings 1.0 7 ● 2.5±0.1 1.5 R0.9 R0.9 0. ● 6.9±0.1 1.5 0.4 ● High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. R ● 1.0±0.1 ● Conditions VCBO IC = 100µA, IE = 0 VCEO IC = 500µA, IB = 0 min typ max 400 Unit V 600 400 V 500 Emitter to base voltage VEBO IE = 100µA, IC = 0 5 Forward current transfer ratio hFE VCE = 5V, IC = 30mA 30 Collector to emitter saturation voltage VCE(sat) IC = 250mA, IB = 50mA* 1.5 V Base to emitter saturation voltage VBE(sat) IC = 250mA, IB = 50mA* 1.5 V Transition frequency fT VCB = 30V, IE = –20mA, f = 200MHz Collector output capacitance Cob VCB = 30V, IE = 0, f = 1MHz Turn-on time Fall time Storage time 2SD1350 2SD1350A 2SD1350 2SD1350A 2SD1350 2SD1350A ton tf tstg V 55 MHz 7 VCC = 200V, IC = 100mA 0.4 IB1 = 10mA, IB2 = –10mA 1.0 VCC = 200V, IC = 100mA 0.7 IB1 = 10mA, IB2 = –10mA 1.0 VCC = 200V, IC = 100mA 3.6 IB1 = 10mA, IB2 = –10mA 4.0 pF µs µs µs * Pulse measurement 1 Transistor 2SD1350, 2SD1350A IC — VCE 1.4 1.2 1.0 0.8 0.6 0.4 Ta=25˚C 100 Collector current IC (mA) 80 IB=1.0mA 60 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 40 0.4mA 0.3mA 0.2mA 0.1mA 20 0.2 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 30 10 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 3 10 30 100 300 1000 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 25 20 15 10 5 0 10 30 100 300 1000 Collector to base voltage VCB (V) Ta=75˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 1 3 10 30 100 300 1000 Collector current IC (mA) 60 VCE=5V 100 80 Ta=75˚C 60 25˚C –25˚C 40 20 1 3 10 30 100 300 Collector current IC (mA) Cob — VCB 30 3 fT — I E 0 1 10 12 120 IC/IB=5 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 IC/IB=5 30 hFE — IC 100 Collector output capacitance Cob (pF) 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 4 VCB=30V Ta=25˚C Transition frequency fT (MHz) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 120 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.6 1000 50 40 30 20 10 0 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 Emitter current IE (A) –1