Data Sheet

D2
PA
K
PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
2 April 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
•
•
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
3. Applications
•
•
•
•
DC-to-DC converters
Load switiching
Motor control
Server power supplies
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
30
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
-
-
120
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
306
W
Tj
junction temperature
-55
-
175
°C
-
0.89
1
mΩ
-
1.19
1.5
mΩ
[1]
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13; Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
VGS = 4.5 V; ID = 75 A; VDS = 15 V;
-
37
-
nC
total gate charge
Fig. 14; Fig. 15
-
118
-
nC
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
-
-
1.9
J
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
[1]
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
Continuous current is limited by package.
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
D
drain[1]
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
mb
D
G
mbb076
2
1
S
3
D2PAK (SOT404)
[1]
It is not possible to make connection to pin 2
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMNR90-30BL
Name
Description
Version
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMNR90-30BL
PSMNR90-30BL
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
30
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
30
V
PSMNR90-30BL
Product data sheet
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
Symbol
Parameter
Conditions
VGS
gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID
drain current
VGS = 10 V; Tmb = 100 °C; Fig. 2
VGS = 10 V; Tmb = 25 °C; Fig. 2
Min
Max
Unit
-20
20
V
-
306
W
[1]
-
120
A
[1]
-
120
A
-
1573
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
-
120
A
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
1573
A
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
-
1.9
J
[1]
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1]
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
Continuous current is limited by package.
03aa16
120
003a a f774
5 00
ID
(A)
Pder
(%)
4 00
80
3 00
2 00
40
(1)
1 00
0
Fig. 1.
0
50
100
150
Tmb (°C)
Normalized total power dissipation as a
function of mounting base temperature
PSMNR90-30BL
Product data sheet
0
200
Fig. 2.
0
10 0
150
200
Tmb ( C)
Continuous drain current as a function of
mounting base temperature.
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
003a a f773
104
ID
(A)
103
tp =10 ms
Limit R DS on = VDS / ID
100 ms
102
1 ms
DC
10
10 ms
100 ms
1
10-1
10-1
Fig. 3.
1
10
102
V DS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.22
0.49
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
minimum footprint; mounted on a
printed-circuit board
-
50
-
K/W
003aaf772
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
10-2
P
0.02
single shot
10
tp
-3
Fig. 4.
10-6
δ=
10-5
10-4
10-3
10-2
10-1
tp
T
t
T
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMNR90-30BL
Product data sheet
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
27
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
1.3
1.7
2.2
V
0.65
-
-
V
-
-
2.5
V
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
0.02
10
µA
VDS = 30 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
0.89
1
mΩ
-
1.1
1.4
mΩ
-
1.65
2
mΩ
-
1.19
1.5
mΩ
f = 1 MHz
-
1.1
-
Ω
ID = 75 A; VDS = 15 V; VGS = 10 V;
-
243
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
222
-
nC
ID = 75 A; VDS = 15 V; VGS = 4.5 V;
-
118
-
nC
Fig. 14; Fig. 15
-
39
-
nC
Static characteristics
V(BR)DSS
VGS(th)
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 12
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13; Fig. 12
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
Fig. 14; Fig. 15
QGS
gate-source charge
QGS(th)
pre-threshold gatesource charge
-
22
-
nC
QGS(th-pl)
post-threshold gatesource charge
-
17
-
nC
QGD
gate-drain charge
-
37
-
nC
VGS(pl)
gate-source plateau
voltage
-
2.8
-
V
PSMNR90-30BL
Product data sheet
ID = 75 A; VDS = 15 V; Fig. 14; Fig. 15
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
Symbol
Parameter
Conditions
Min
Typ
Ciss
input capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
-
14850 -
pF
Coss
output capacitance
Tj = 25 °C; Fig. 16
-
2799
-
pF
Crss
reverse transfer
capacitance
-
1215
-
pF
td(on)
turn-on delay time
-
95
-
ns
-
213
-
ns
VDS = 15 V; RL = 0.2 Ω; VGS = 5 V;
Max
Unit
RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C
tr
rise time
VDS = 15 V; RL = 0.2 Ω; VGS = 5 V;
RG(ext) = 5 Ω; Tj = 25 °C; ID = 75 A
td(off)
tf
turn-off delay time
VDS = 15 V; RL = 0.2 Ω; VGS = 5 V;
-
199
-
ns
fall time
RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C
-
115
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.8
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
67
-
ns
recovered charge
VDS = 15 V
-
123
-
nC
Qr
003aaf762
300
003aaf766
105
gfs
(S)
C
(pF)
240
C iss
180
Crss
104
120
60
0
Fig. 5.
0
20
40
60
ID (A)
Forward transconductance as a function of
drain current; typical values
PSMNR90-30BL
Product data sheet
103
10-1
80
Fig. 6.
10
VGS (V)
102
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
003aaf764
5
ID
(A)
RDSon
(mΩ )
4
60
3
45
2
30
1
15
0
Fig. 7.
003aaf763
75
0
4
8
12
VGS (V)
0
16
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 8.
003aad011
300
ID
(A)
250
10
0
0.6
1.2
Tj = 25 ° C
1.8
2.4
V GS (V)
3
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aab271
10-1
3
4.5
3.5
Tj = 175 ° C
ID
(A)
10-2
200
10-3
2.8
min
typ
1
2
max
150
10-4
100
2.6
10-5
50
0
Fig. 9.
VGS (V) = 2.4
0
2
4
6
8
VDS (V)
10-6
10
0
VGS (V)
3
Output characteristics: drain current as a
Fig. 10. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
PSMNR90-30BL
Product data sheet
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
003a a c982
3
VGS (th)
(V)
003aag668
10
RDSon
(mΩ)
8
max
2
2.8
2.6
VGS (V) = 3
6
typ
min
4
1
4.5
2
0
-60
0
60
120
Tj (°C)
0
180
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
3.5
10
0
100
200
ID (A)
300
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
003a a f767
2
VDS
a
ID
1.5
VGS(pl)
VGS(th)
1
VGS
QGS1
0.5
QGS2
QGS
QGD
QG(tot)
003aaa508
0
-60
0
60
120
Tj ( C)
Fig. 14. Gate charge waveform definitions
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMNR90-30BL
Product data sheet
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
003aaf768
10
003aaf769
105
V GS
(V)
8
C
(pF)
24V
15V
6
Ciss
104
VDS = 6V
Coss
4
Crss
103
2
0
0
100
200
102
10-1
QG (nC) 300
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
1
10
V DS (V)
102
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaf770
75
IS
(A)
60
45
30
Tj = 175 ° C
15
0
0
0.2
0.4
Tj = 25 °C
0.6
0.8
VSD (V)
1
Fig. 17. Source current as a function of source-drain voltage; typical values
PSMNR90-30BL
Product data sheet
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
11. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
b2
c
b
e
e
Q
0
5 mm
scale
Dimensions (mm are the original dimensions)
Unit
max
nom
min
mm
A
A1
b
b2
c
4.5
1.40 0.85 1.45 0.64
4.1
1.27 0.60 1.05 0.46
D
D1
E
11
1.6
10.3
1.2
9.7
e
2.54
HD
Lp
Q
15.8
2.9
2.6
14.8
2.1
2.2
sot404_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
06-03-16
13-02-25
SOT404
Fig. 18. Package outline D2PAK (SOT404)
PSMNR90-30BL
Product data sheet
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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PSMNR90-30BL
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
grant, conveyance or implication of any license under any copyrights, patents
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Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
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PSMNR90-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
12 / 13
PSMNR90-30BL
NXP Semiconductors
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
Package outline ................................................... 10
12
12.1
12.2
12.3
12.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 April 2014
PSMNR90-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
13 / 13