DMN4030LK3

A Product Line of
Diodes Incorporated
DMN4030LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
TA = 25°C
30mΩ @ VGS = 10V
13.7A
50mΩ @ VGS = 4.5V
10.6A
•
Low on-resistance
•
Fast switching speed
•
“Green” component and RoHS compliant (Note 1)
•
Qualified to AEC-Q101 Standards for High Reliability
40V
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
Backlighting
•
DC-DC Converters
•
Power management functions
•
Case: TO252-3L
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.33 grams (approximate)
D
D
TO252-3L
G
D
G
TOP VIEW
S
S
PIN OUT -TOP VIEW
Equivalent Circuit
Ordering Information (Note 1)
Product
DMN4030LK3-13
Notes:
Marking
N4030L
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YYWW
N4030L
DMN4030LK3
Document Number DS32008 Rev. 3 - 2
= Manufacturer’s Marking
N4030L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
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© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4030LK3
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS = 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 2)
(Note 4)
TA = 70°C (Note 4)
(Note 3)
(Note 5)
(Note 4)
(Note 5)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
40
±20
13.7
10.9
9.4
37.7
10.7
37.7
Unit
V
V
Value
4.18
33.4
8.9
71.4
2.14
17.1
29.9
14.0
58.4
2.46
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Note 3)
Power dissipation
Linear derating factor
(Note 4)
PD
(Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 3)
(Note 4)
(Note 6)
(Note 7)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2. AEC-Q101 VGS maximum is ±16V.
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note 3, except the device is measured at t ≤ 10 sec.
5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN4030LK3
Document Number DS32008 Rev. 3 - 2
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A Product Line of
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DMN4030LK3
Thermal Characteristics
RDS(on)
10
Limited
DC
1
ID Drain Current (A)
ID Drain Current (A)
RDS(on)
1s
100ms
10ms
T amb=25°C
1ms
100m 25mm x 25mm
100m
1
DC 1s
1
100ms
10ms
T amb=25°C
10
35
T amb=25°C
25mm x 25mm
1oz FR4
40
D=0.5
20
D=0.1
D=0.2
D=0.05
10
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
10
Safe Operating Area
60
Transient Thermal Impedance
Single Pulse
T amb=25°C
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
Document Number DS32008 Rev. 3 - 2
50mm x 50mm
2oz FR4
25
20
D=0.5
15
10
D=0.1
D=0.2
D=0.05
5
Single Pulse
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
1k
4
50mm x 50mm
2oz FR4
3
25mm x 25mm
1oz FR4
2
1
0
Pulse Power Dissipation
DMN4030LK3
Tamb=25°C
30
Transient Thermal Impedance
Max Power Dissipation (W)
Max Power Dissipation (W)
1
VDS Drain-Source Voltage (V)
Safe Operating Area
30
100µs
100m
VDS Drain-Source Voltage (V)
50
1ms
50mm x 50mm
2oz FR4
100m
100µs
1oz FR4
Limited
10
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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© Diodes Incorporated
A Product Line of
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DMN4030LK3
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
40
⎯
⎯
⎯
⎯
⎯
⎯
0.5
±100
V
μA
nA
ID = 250μA, VGS = 0V
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.0
RDS (ON)
⎯
gfs
VSD
trr
Qrr
⎯
⎯
S
V
ns
nC
ID = 250μA, VDS = VGS
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 6A
VDS = 15V, ID = 12A
IS = 12A, VGS = 0V
⎯
3.0
0.030
0.050
⎯
1.1
⎯
⎯
V
Static Drain-Source On-Resistance (Note 8)
⎯
0.021
0.037
22.8
0.95
135
799
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
604
106
59.6
6.5
12.9
2.3
3.6
4.2
12.4
13.8
10.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
Ω
Test Condition
IS = 12A, di/dt = 100A/μs
VDS = 20V, VGS = 0V
f= 1MHz
VGS = 4.5V
VGS = 10V
VDS = 20V
ID = 12A
VDD = 20V, VGS = 10V
ID = 12A, RG ≅ 6.0Ω
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMN4030LK3
Document Number DS32008 Rev. 3 - 2
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A Product Line of
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DMN4030LK3
Typical Characteristics
T = 25°C
4.5V
10
4V
3.5V
VGS
1
3V
T = 150°C
10V
4V
10
ID Drain Current (A)
ID Drain Current (A)
10V
3.5V
3V
1
2.5V
0.1
2V
VGS
0.1
0.01
0.1
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
T = 150°C
0.1
T = 25°C
0.01
1E-3
1
2
3
VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
10
T = 25°C
3.5V
3V
VGS
1
4V
4.5V
0.1
10V
0.01
0.01
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
DMN4030LK3
Document Number DS32008 Rev. 3 - 2
VGS = 10V
1.4
ID = 12A
RDS(on)
1.2
1.0
0.8
0.4
-50
VGS(th)
VGS = VDS
0.6
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
ID Drain Current (A)
1
Normalised RDS(on) and VGS(th)
1.6
VDS = 10V
10
1
T = 150°C
0.1
T = 25°C
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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DMN4030LK3
Typical Characteristics - continued
C Capacitance (pF)
f = 1MHz
600
CISS
COSS
400
CRSS
200
0
0.1
1
10
VGS Gate-Source Voltage (V)
10
VGS = 0V
800
8
6
4
VDS = 20V
2
0
ID = 12A
0
VDS - Drain - Source Voltage (V)
2
4
6
8
10
12
14
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
DMN4030LK3
Document Number DS32008 Rev. 3 - 2
Switching time test circuit
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A Product Line of
Diodes Incorporated
DMN4030LK3
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Min
Max
Min
Max
A
0.086
0.094
2.18
2.39
e
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1
0.205
-
5.21
-
θ1°
0°
10°
0°
10°
E
0.250
0.265
6.35
6.73
θ°
0°
15°
0°
15°
E1
0.170
-
4.32
-
-
-
-
-
-
DMN4030LK3
Document Number DS32008 Rev. 3 - 2
Min
Millimeters
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Max
Min
0.090 BSC
Max
2.29 BSC
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4030LK3
Suggested Pad Layout
6.2
0.244
3.0
0.118
5.8
0.228
1.6
0.063
2.58
0.101
6.17
0.243
mm
inches
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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DMN4030LK3
Document Number DS32008 Rev. 3 - 2
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© Diodes Incorporated
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