DMN6068LK3

DMN6068LK3
Green
Product Summary
V(BR)DSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
ID
RDS(on)
TA = +25°C
68mΩ @ VGS = 10V
8.5A
100mΩ @ VGS = 4.5V
7.0A
•
100% Unclamped Inductive Switch (UIS) test in production
•
Low on-resistance
•
Fast switching speed
•
•
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
60V
Mechanical Data
•
Case: TO252
Description
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.33 grams (approximate)
Applications
•
Motor Control
•
Transformer Driving Switch
•
DC-DC Converters
•
Power Management Functions
•
Uninterrupted Power Supply
D
D
TO252-3L
G
D
G
TOP VIEW
Ordering Information
Note:
S
PIN OUT -TOP VIEW
S
Equivalent Circuit
(Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN6068LK3-13
N6068L
13
16
2,500
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
YYWW
N6068L
DMN6068LK3
Document Number DS32057 Rev 4 - 2
= Manufacturer’s Marking
N6068L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
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DMN6068LK3
Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source voltage
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 5)
(Note 11)
(Note 11)
(Note 7)
TA = 70°C (Note 7)
(Note 6)
(Note 8)
(Note 7)
(Note 8)
Symbol
VDSS
VGS
EAS
IAS
ID
IDM
IS
ISM
Value
60
±20
37.5
5.0
8.5
6.8
6.0
22.2
10.2
22.2
Unit
V
V
mJ
A
Value
4.12
33
8.49
67.9
2.12
16.9
30.3
14.7
59.0
3.09
-55 to +150
Unit
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 6)
Power dissipation
Linear derating factor
(Note 7)
PD
(Note 9)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Note 6)
(Note 7)
(Note 9)
(Note 10)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
5. AEC-Q101 VGS maximum is ±16V.
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note 2, except the device is measured at t ≤ 10 sec.
8. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25• , VDD = 50V, starting TJ = 25°C
DMN6068LK3
Document Number DS32057 Rev 4 - 2
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DMN6068LK3
RDS(on)
10 Limited
1
RDS(on)
ID Drain Current (A)
ID Drain Current (A)
Thermal Characteristics
DC 1s
100ms
100m
10ms
Tamb=25°C
25mm x 25mm
1oz FR4
DC
1
100µs
1s
100ms
100m
1ms
1
10 Limited
10ms
Tamb=25°C
50mm x 50mm
2oz FR4
10
1ms
100µs
1
VDS Drain-Source Voltage (V)
10
VDS Drain-Source Voltage (V)
Safe Operating Area
Safe Operating Area
50
Tamb=25°C
25mm x 25mm
1oz FR4
40
D=0.5
30
20 D=0.2
D=0.1
D=0.05
10
Single Pulse
0
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
35
60
Single Pulse
Tamb=25°C
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ 1m
10m 100m
1
10
100
Pulse Width (s)
25
20 D=0.5
15
10
Document Number DS32057 Rev 4 - 2
D=0.1
D=0.2
D=0.05
5
0
100µ 1m
Single Pulse
10m 100m
1
10
100
1k
Pulse Width (s)
1k
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Pulse Power Dissipation
DMN6068LK3
Tamb=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Max Power Dissipation (W)
Max Power Dissipation (W)
Transient Thermal Impedance
30
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
0
20
40
60
80 100 120 140 160
Temperature (°C)
Derating Curve
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DMN6068LK3
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60


V
ID = 250µA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS


0.5
µA
VDS= 60V, VGS= 0V
Gate-Source Leakage
IGSS


±100
nA
VGS= ±20V, VDS= 0V
VGS(th)
1.0

3.0
V
ID= 250µA, VDS= VGS
ON CHARACTERISTICS
Gate Threshold Voltage
0.068


Forward Transconductance (Notes 12 & 13)
gfs

19.7

S
VDS= 15V, ID= 12A
Diode Forward Voltage (Note 12)
VSD

0.98
1.15
V
IS= 12A, VGS= 0V
Reverse recovery time (Note 13)
trr
145

ns
Reverse recovery charge (Note 13)
Qrr
929

nC

0.100
Ω
VGS= 10V, ID= 12A
RDS (ON)
Static Drain-Source On-Resistance (Note 12)
VGS= 4.5V, ID= 6A
IS= 12A, di/dt= 100A/µs
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
Ciss

502

pF
Output Capacitance
Coss

45.7

pF
Reverse Transfer Capacitance
Crss

27.1

pF
Total Gate Charge
Qg

5.55

nC
Total Gate Charge
Qg

10.3

nC
Gate-Source Charge
Qgs

1.6

nC
Gate-Drain Charge
Qgd

3.5

nC
Turn-On Delay Time (Note 14)
tD(on)

3.6

ns
Turn-On Rise Time (Note 14)
tr

10.8

ns
Turn-Off Delay Time (Note 14)
tD(off)

11.9

ns
tf

8.7

ns
Turn-Off Fall Time (Note 14)
Notes:
VDS= 30V, VGS= 0V
f= 1MHz
VGS= 4.5V
VGS= 10V
VDS= 30V
ID= 12A
VDD= 30V, VGS= 10V
ID= 12A, RG ≅ 6.0Ω
12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
DMN6068LK3
Document Number DS32057 Rev 4 - 2
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DMN6068LK3
Typical Characteristics
10V
T = 150°C
5V
4.5V
10
4V
1
3.5V
VGS
0.1
3V
0.01
0.1
1
1
0.01
3
4
VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
5
Normalised RDS(on) and VGS(th)
T = 25°C
10
2.0
VGS = 10V
ID = 12A
1.8
1.6
RDS(on)
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS(th)
VGS = VDS
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
100
3V
VGS
3.5V
10
4V
1
4.5V 5V
0.1
10V
T = 25°C
0.01
0.01
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
DMN6068LK3
Document Number DS32057 Rev 4 - 2
ISD Reverse Drain Current (A)
ID Drain Current (A)
T = 150°C
2
1
Output Characteristics
VDS = 10V
1
2V
0.1
VDS Drain-Source Voltage (V)
1
1E-3
2.5V
VGS
Output Characteristics
0.1
3V
0.1
VDS Drain-Source Voltage (V)
10
4.5V
4V
3.5V
0.01
10
10V
10
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
10
T = 150°C
1
T = 25°C
0.1
Vgs = 0V
0.01
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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DMN6068LK3
Typical Characteristics - continued
600
VGS Gate-Source Voltage (V)
C Capacitance (pF)
10
VGS = 0V
f = 1MHz
CISS
400
COSS
CRSS
200
0
0.1
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
6
4
VDS = 30V
ID = 12A
2
0
0
2
4
6
8
10
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
40
Starting TJ = 25°C
15
30
10
20
5
10
100µ
1m
EAS Avalanche Energy (mJ)
IAS Avalanche Current (A)
20
8
L Inductor (H)
Single-Pulsed Avalanche Rating
DMN6068LK3
Document Number DS32057 Rev 4 - 2
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DMN6068LK3
Test Circuits
Current
regulator
QG
50k
12V
Q GS
VG
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
td(off)
t(on)
tr
t(on)
Switching time waveforms
Switching time test circuit
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
A
b3
c2
L3
A2
D
E1
H
L4
A1
L
e
2X b2
3X b
DMN6068LK3
Document Number DS32057 Rev 4 - 2
a
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TO252
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21
−
−
e
2.286
−
−
E 6.45 6.70 6.58
E1 4.32
−
−
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°
−
All Dimensions in mm
May 2013
© Diodes Incorporated
DMN6068LK3
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Z
X1
X2
Y1
Y2
C
E1
Y2
C
Z
Y1
X1
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
E1
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMN6068LK3
Document Number DS32057 Rev 4 - 2
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