PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optical control systems 7.0±0.5 Anode mark ø1.6 Device center 8.0±0.5 5.0 Features 2-1.2±0.15 2-0.6±0.15 0.41±0.15 13 min. 2.3±0.3 Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) 2 Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.) 1 5.08±0.25 2.8±0.3 Adoption of visible light cutoff resin Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit VR 30 V Reverse voltage (DC) Power dissipation PD 100 mW Operating ambient temperature Topr –30 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 1: Cathode 2: Anode Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current *1 *2 ID Conditions min VR = 10V typ max Unit 5 50 nA Photo current IL VR = 10V, L = 1000 25 µA Peak sensitivity wavelength λP VR = 10V 960 nm VR = 10V, RL = 1kΩ 50 ns VR = 10V, RL = 100kΩ 5 µs *2 Response time tr, tf Response time tr, tf*2 lx*1 15 Capacitance between pins Ct VR = 0V, f = 1MHz 70 pF Acceptance half angle θ Measured from the optical axis to the half power point 65 deg. Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) λP = 800nm Sig.OUT ,,,, ,,,, (Output pulse) 50Ω 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 PIN Photodiodes PNZ313B PD — Ta 60 40 ID (nA) 10 2 10 Dark current IL (µA) Photo current PD (mW) 80 10 3 VR = 10V Ta = 25˚C T = 2856K 100 Power dissipation ID — Ta IL — L 10 3 120 1 VR = 10V 10 2 10 1 20 0 – 30 0 20 40 60 80 10 –1 10 100 10 2 Ambient temperature Ta (˚C ) 80 60 40 20 40 60 80 100 Directional characteristics 100 VR = 10V Ta = 25˚C Ta = 25˚C S (%) 80 60 Relative sensitivity S (%) 100 Relative sensitivity IL (%) Relative photo current 120 0 Ambient temperature Ta (˚C ) Spectral sensitivity characteristics 100 VR = 10V L = 1000 lx T = 2856K 140 10 –1 – 40 – 20 10 4 Illuminance L (lx) IL — Ta 160 10 3 40 20 80 60 40 20 20 0 – 40 – 20 0 20 40 60 80 0 600 100 700 Ambient temperature Ta (˚C ) Ct — V R 20 10 Reverse voltage VR (V) 10 2 40 80 ID — VR VR = 10V 50Ω Sig. OUT RL tr td 90% 10% tf 1 Dark current 40 10 0 10 2 ,, 60 1 40 Angle θ (deg.) ID (nA) tr , tf (µs) 80 10 –1 80 λ (nm) tr , tf — RL Rise time, Fall time Ct (pF) Capacitance between pins 0 1000 1100 1200 10 2 Sig.IN 2 900 Wavelength 100 0 10 –2 800 10 –1 10 –2 10 –1 1 10 10 2 External load resistance RL (kΩ) 10 1 10 –1 0 8 16 24 32 40 Reverse voltage VR (V) 48