Data Sheet

TO
-2
20F
PSMN3R9-60XS
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F
(SOT186A)
12 September 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to
175 °C. This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
2. Features and benefits
•
•
•
High efficiency due to low switching and conduction losses
Isolated package
Suitable for standard level gate drive
3. Applications
•
•
•
•
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
60
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
75
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
55
W
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
3.25
4
mΩ
[1]
Static characteristics
RDSon
drain-source on-state
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 48 V;
-
34.7
-
nC
total gate charge
Fig. 13; Fig. 14
-
103
-
nC
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A;
-
-
478
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
Vsup ≤ 60 V; RGS = 50 Ω; unclamped;
Fig. 3
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
[1]
Continuous current is limited by package
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
Simplified outline
Graphic symbol
D
mb
G
mounting base; isolated
S
mbb076
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN3R9-60XS
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
60
V
VDGR
drain-gate voltage
RGS = 20 kΩ
-
60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
-
56
A
-
75
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 1
[1]
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
318
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
55
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
PSMN3R9-60XS
Product data sheet
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
Parameter
Conditions
Min
Max
Unit
Source-drain diode
IS
source current
Tmb = 25 °C
-
46
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
318
A
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A;
-
478
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Vsup ≤ 60 V; RGS = 50 Ω; unclamped;
Fig. 3
[1]
Continuous current is limited by package
aaa-008785
100
ID
(A)
03aa16
120
Pder
(%)
75
(1)
80
50
40
25
0
0
25
50
75
100
125
150 175
Tmb (°C)
0
200
(1) Capped at 75A due to package
Fig. 1.
Continuous drain current as a function of
mounting base temperature
PSMN3R9-60XS
Product data sheet
Fig. 2.
0
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
IAL
(A)
aaa-008786
102
(1)
(2)
10
1
10-2
Fig. 3.
ID
(A)
10-1
1
10
tAL (ms)
Single pulse avalanche rating; avalanche current as a function of avalanche time
aaa-008787
103
tp = 10 us
Limit RDSon = VDS / ID
102
100 us
10
DC
1 ms
10 ms
100 ms
1
10-1
10-1
Fig. 4.
1
10
102
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
8. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
2.5
2.73
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
-
55
-
K/W
PSMN3R9-60XS
Product data sheet
vertical in free air
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
aaa-008788
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1
0.05
0.02
P
10-2
δ=
T
single shot
tp
10-3
10-6
Fig. 5.
tp
10-5
10-4
10-3
10-2
10-1
1
t
T
10
102
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
9. Isolation characteristics
Table 6.
Isolation characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Cisol
isolation capacitance
-
10
-
pF
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
sinusoidal waveform; clean and dust
free
-
-
2500
V
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
54
-
-
V
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2.4
3
4
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
-
-
4.5
V
1
-
-
V
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
0.07
1
µA
VDS = 60 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
[1]
Conditions
[1]
f = 1 MHz
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
VGS(th)
VGSth
Fig. 9; Fig. 10
Fig. 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
IDSS
drain leakage current
PSMN3R9-60XS
Product data sheet
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
-
8.7
mΩ
-
3.25
4
mΩ
f = 1 MHz
-
0.71
-
Ω
total gate charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
-
103
-
nC
QGS
gate-source charge
Fig. 13; Fig. 14
-
25.1
-
nC
QGD
gate-drain charge
-
34.7
-
nC
Ciss
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
-
5494
-
pF
Coss
output capacitance
Tj = 25 °C; Fig. 15
-
743
-
pF
Crss
reverse transfer
capacitance
-
455
-
pF
td(on)
turn-on delay time
VDS = 30 V; RL = 1 Ω; VGS = 10 V;
-
30.6
-
ns
tr
rise time
RG(ext) = 5 Ω
-
71.2
-
ns
td(off)
turn-off delay time
-
63.7
-
ns
tf
fall time
-
64.4
-
ns
RDSon
drain-source on-state
resistance
Fig. 11
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
RG
gate resistance
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
0.76
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
40.5
-
ns
recovered charge
VDS = 30 V
-
53
-
nC
Qr
PSMN3R9-60XS
Product data sheet
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
aaa-008789
300
ID
(A)
10 V
8V
aaa-008790
20
RDSon
(mΩ)
6V
240
16
VGS = 5.5 V
180
12
120
8
5V
60
4
4.5 V
0
Fig. 6.
0
0.5
1
1.5
VDS (V)
0
2
Output characteristics; drain current as a
Fig. 7.
function of drain-source voltage; typical values
aaa-008792
300
0
4
8
003aah027
max
240
4
180
3
typ
120
2
min
0
Fig. 8.
0
1
2
3
4
1
Tj = 25°C
5
6
7
VGS (V)
0
-60
8
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN3R9-60XS
Product data sheet
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
VGS(th)
(V)
150°C
16
VGS (V)
5
ID
(A)
60
12
Fig. 9.
60
120
T j (°C)
180
Gate-source threshold voltage as a function of
junction temperature
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
003aah028
10-1
003aag814
2.4
ID
(A)
a
10-2
1.8
typ
min
10-3
max
1.2
10-4
0.6
10-5
10-6
0
2
4
0
-60
6
VGS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-008793
10
RDSon
(mΩ)
5V
5.5 V
VDS
ID
8
6V
VGS(pl)
6
VGS(th)
4
VGS
8V
QGS1
10 V
QGS2
QGS
2
QGD
QG(tot)
003aaa508
0
0
60
120
180
240
ID (A)
Fig. 13. Gate charge waveform definitions
300
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN3R9-60XS
Product data sheet
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
003aah402
10
VGS
(V)
8
aaa-008795
104
C
(pF)
Ciss
14 V
6
VDS = 48V
103
Coss
4
Crss
2
0
0
40
80
QG (nC)
102
10-1
120
1
10
VDS (V)
102
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-008796
300
IS
(A)
240
180
120
60
0
150°C
0
0.3
0.6
Tj = 25°C
0.9
1.2
1.5
VSD (V)
1.8
Fig. 16. Source current as a function of source-drain voltage; typical values
PSMN3R9-60XS
Product data sheet
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
11. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
A
P
A1
q
D1
mounting
base
T
D
j
L2
L1
K
Q
b1
L
b2
1
2
3
b
w M
c
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
b2
c
D
D1
E
e
e1
j
K
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
0.6
0.4
L
L1
14.4 3.30
13.5 2.79
(1)
L2
max.
P
Q
q
3
3.2
3.0
2.6
2.3
3.0
2.6
(2)
T
2.5
w
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are # 2.5 × 0.8 max. depth
OUTLINE
VERSION
SOT186A
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
06-02-14
3-lead TO-220F
Fig. 17. Package outline TO-220F (SOT186A)
PSMN3R9-60XS
Product data sheet
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
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information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
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short data sheet, the full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PSMN3R9-60XS
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
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associated with their applications and products.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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PSMN3R9-60XS
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N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
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the product is not suitable for automotive use. It is neither qualified nor
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without NXP Semiconductors’ warranty
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between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN3R9-60XS
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PSMN3R9-60XS
NXP Semiconductors
N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Limiting values .......................................................2
8
Thermal characteristics .........................................4
9
Isolation characteristics ........................................5
10
Characteristics ....................................................... 5
11
Package outline ................................................... 10
12
12.1
12.2
12.3
12.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 September 2013
PSMN3R9-60XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 September 2013
© NXP N.V. 2013. All rights reserved
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