Power Transistors 2SC5926 Silicon NPN triple diffusion planar type Unit: mm 1.0±0.2 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 13.0±0.2 ■ Features 10.0±0.2 5.0±0.1 90˚ 4.2±0.2 For power amplification 1.2±0.1 C 1.0 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 3 A Peak collector current ICP 6 A Collector power dissipation PC 15 W Ta = 25°C 18.0±0.5 Solder Dip 1.48±0.2 2.25±0.2 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 2.5±0.2 2.5±0.2 1 2 3 1: Base 2: Collector 3: Emitter MT-4-A1 Package Internal Connection 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C C B Note) *: Non-repetitive peak collector current E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0 100 µA Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, IB = 0 100 µA IEBO VEB = 6 V, IC = 0 Emitter-base cutoff current (Collector open) Conditions Min VCE = 4 V, IC = 0.5 A 500 hFE2 VCE = 4 V, IC = 3 A 100 VCE(sat) IC = 1 A, IB = 20 mA Forward current transfer ratio *1 hFE1 *2 Collector-emitter saturation voltage Typ Max 60 Unit V 100 µA 2 300 0.7 V Turn-on time ton IC = 1 A, Resistance loaded 0.2 µs Storage time tstg IB1 = 0.1 A, IB2 = − 0.1 A 1.5 µs Fall time tf VCC = 50 V 0.1 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q P hFE1 500 to 1 500 1 300 to 2 300 Publication date: November 2004 SJD00326AED 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP