Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.8+0.2 –0.3 3 ■ Features 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open) VCBO −45 V Collector-emitter voltage (Base open) VCEO −45 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.2 –0.1 Rating 0 to 0.1 Symbol 1.1+0.3 –0.1 10˚ Parameter 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −45 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −45 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 Forward current transfer ratio * hFE VCE = −10 V, IC = −2 mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Unit V 160 IC = −100 mA, IB = −10 mA Max − 0.3 − 0.1 µA −100 µA 460 − 0.5 V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 Marking symbol BQ BR BS B Product of no-rank is not classified and have no marking symbol for rank. Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJD00047BED 1 2SB0709A IC VCE 200 −100 160 120 80 Ta = 25°C −80 IB = −300 µA −60 −250 µA −200 µA −40 0 −150 µA −100 µA 40 80 120 160 −2 0 −4 VCE = −5 V Ta = 25°C −10 Collector current IC (mA) Base current IB (µA) −150 −100 −50 − 0.8 VCE = −5 V 25°C Ta = 75°C −1.2 −25°C −80 0 − 0.4 − 0.8 Transition frequency fT (MHz) 300 Ta = 75°C 25°C −25°C 200 100 0 −1 −1.6 −2.0 −100 Collector current IC (mA) −1 000 IC / IB = 10 Ta = 75°C 25°C −25°C − 0.001 −1 120 100 80 60 40 1 −100 −1 000 Cob VCB VCB = −10 V Ta = 25°C 0 0.1 −10 Collector current IC (mA) 20 −10 −400 −1 fT I E 160 140 400 −1.2 Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 500 −300 −10 Base-emitter voltage VBE (V) VCE = −10 V −200 Base current IB (µA) − 0.01 0 −1.6 −100 − 0.1 Base-emitter voltage VBE (V) 600 0 VCE(sat) IC −40 − 0.4 0 −12 −120 −200 Forward current transfer ratio hFE −8 −160 −250 2 −6 −240 −200 0 −10 IC VBE −300 0 −20 Collector-emitter voltage VCE (V) IB VBE −350 −30 −50 µA Ambient temperature Ta (°C) −400 −40 Collector-emitter saturation voltage VCE(sat) (V) 0 VCE = −5 V Ta = 25°C −50 −20 40 0 IC I B −60 Collector current IC (mA) −120 Collector current IC (mA) Collector power dissipation PC (mW) PC Ta 240 10 Emitter current IE (mA) SJC00047BED 100 8 IE = 0 f = 1 MHz Ta = 25°C 7 6 5 4 3 2 1 0 −1 −10 −100 Collector-base voltage VCB (V) 2SB0709A NF IE NF IE VCB = −5 V R = 50 kΩ 18 g Ta = 25°C VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C hfe 16 4 3 2 14 12 f = 100 Hz 10 1 kHz 8 hoe (µS) 10 10 kHz 6 hie (kΩ) 4 1 VCE = −5 V f = 270 Hz Ta = 25°C 100 h Parameter Noise figure NF (dB) 5 Noise figure NF (dB) h Parameter IE 20 6 2 0 0.01 0.1 1 10 0 0.1 1 Emitter current IE (mA) Emitter current IE (mA) 10 1 0.1 hre (× 10−4) 1 10 Emitter current IE (mA) h Parameter VCE hfe IE = 2 mA f = 270 Hz Ta = 25°C h Parameter 100 hoe (µS) 10 hre (× 10−4) hie (kΩ) 1 −1 −10 −100 Collector-emitter voltage VCE (V) SJC00047BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL