Data Sheet

BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002
Product data
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
2. Features
■
■
■
■
TrenchMOS™ technology
Very fast switching
Low threshold voltage
Subminiature surface mount package.
3. Applications
■ Battery management
■ High speed switch
■ Logic level translator.
4. Pinning information
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
Simplified outline
Symbol
d
3
g
1
2
Top view
MSB003
SOT23
MBB076
s
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
-
55
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 4.5 V
-
335
mA
Tsp = 25 °C
-
0.83
W
-
150
°C
VGS = 4.5 V; ID = 500 mA
2.3
4.0
Ω
VGS = 2.5 V; ID = 75 mA
2.4
5.0
Ω
VGS = 1.8 V; ID = 75 mA
3.1
8.0
Ω
Ptot
total power dissipation
Tj
junction temperature
RDSon
drain-source on-state resistance
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
Min
Max
Unit
VDS
Symbol Parameter
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
-
55
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
55
V
VGS
gate-source voltage
-
±10
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3
-
335
mA
Tsp = 100 °C; VGS = 4.5 V; Figure 2
-
212
mA
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
1.3
Tsp = 25 °C; Figure 1
Ptot
total power dissipation
-
0.83
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp = 25 °C
-
335
mA
ISM
peak source (diode forward) current
Tsp = 25 °C; pulsed; tp ≤ 10 µs
-
1.3
A
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
Rev. 02 — 26 April 2002
2 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa17
120
03aa25
120
Pder
I der
(%)
(%)
80
80
40
40
0
0
0
50
100
200
150
0
50
Tsp (°C)
100
150
200
Tsp (°C)
VGS ≥ 4.5 V
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03aa71
10
ID
(A)
Limit RDSon = VDS/ ID
tp = 10 µs
1
100 µs
1 ms
10-1
DC
10 ms
100 ms
10-2
1
102
10
VDS (V)
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
Rev. 02 — 26 April 2002
3 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance from junction to
solder point
mounted on metal clad
substrate; Figure 4
-
-
150
K/W
Rth(j-a)
thermal resistance from junction to
ambient
minimum footprint; mounted on
printed circuit board
-
350
-
K/W
7.1 Transient thermal impedance
03aa69
103
Zth(j-sp)
(K/W)
δ = 0.5
102
0.2
0.1
δ=
P
0.05
10
tp
T
0.02
1
10-5
10-4
t
tp
single pulse
T
10-3
10-2
10-1
1
10
tp (s)
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
Rev. 02 — 26 April 2002
4 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = 10 µA; VGS = 0 V
Tj = 25 °C
55
75
-
V
Tj = −55 °C
50
-
-
V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
Tj = 25 °C
0.4
1.0
1.3
V
Tj = 150 °C
0.3
-
-
V
Tj = −55 °C
-
-
2.5
V
Tj = 25 °C
-
0.01
1.0
µA
Tj = 150 °C
-
-
10
µA
-
10
100
nA
Tj = 25 °C
-
2.4
5
Ω
Tj = 150 °C
-
-
7.4
Ω
-
2.3
4
Ω
-
3.1
8
Ω
VDS = 44 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±8 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 2.5 V; ID = 75 mA;
Figure 7 and 8
VGS = 4.5 V; ID = 500 mA;
Figure 7 and 8
Tj = 25 °C
VGS = 1.8 V; ID = 75 mA;
Figure 7 and 8
Tj = 25 °C
Dynamic characteristics
gfs
forward transconductance
VDS = 10 V; ID = 200 mA;
Figure 11
100
380
-
mS
Qg(tot)
total gate charge
-
1.0
-
nC
Qgs
gate-source charge
ID = 0.5 A; VDS = 44 V;
VGS = 8 V; Figure 14
-
0.05
-
nC
Qgd
gate-drain (Miller) charge
-
0.5
-
nC
Ciss
input capacitance
-
17
40
pF
Coss
output capacitance
VGS = 0 V; VDS = 10 V;
f = 1 MHz; Figure 12
-
7
30
pF
Crss
reverse transfer capacitance
-
4
10
pF
ton
turn-on time
toff
turn-off time
VDD = 50 V; RD = 250 Ω;
VGS = 10 V; RG = 50 Ω;
RGS = 50 Ω
4
10
ns
11
15
ns
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
-
Rev. 02 — 26 April 2002
5 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
0.95
1.5
V
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 300 mA; VGS = 0 V;
Figure 13
trr
reverse recovery time
Qr
recovered charge
IS = 300 mA;
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 25 V
30
-
ns
30
-
nC
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
-
Rev. 02 — 26 April 2002
6 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa73
0.8
03aa75
0.8
I
D
(A)
ID
(A)
VGS = 4.5 V
0.6
Tj = 25 °C
0.6
150 °C
0.4
0.4
3V
2V
0.2
0.2
1.8 V
1.6 V
0
1.4 V
0
0.4
0.8
1.2
0
1.6
2
VDS (V)
Tj = 25 °C
0
2
1
4
3
5
VGS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa74
20
03aa28
2.4
1.4 V
RDSon
(Ω)
16
a
1.6 V
1.8
1.8 V
12
2V
1.2
8
3V
4
0.6
VGS = 4.5 V
0
0
0.2
0.4
0.8
0.6
ID (A)
0
-60
60
120
180
Tj (°C)
Tj = 25 °C
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
0
Rev. 02 — 26 April 2002
7 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa38
2
03aa89
10-1
ID
(A)
VGS(th)
(V)
1.6
10-2
10-3
1.2
min
typ
10-4
0.8
min
0.4
0
-60
10-5
10-6
0
typ
60
120
180
0
0.4
0.8
1.2
2
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03aa76
0.5
03aa78
102
gfs
(S)
C
(pF)
Tj = 25 °C
0.4
1.6
VGS (V)
Tj (°C)
Ciss
0.3
150 °C
10
Coss
0.2
Crss
0.1
0
0
0.2
0.4
ID (A)
0.6
Tj = 25 °C and 150 °C; VDS > ID × RDSon
1
10-1
102
10
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
1
Rev. 02 — 26 April 2002
8 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa77
1
03ab08
8
IS
(A)
VGS
(V)
0.8
6
150 °C
0.6
4
Tj = 25 °C
0.4
2
0.2
0
0
0
0.4
0.8
1.2
1.6
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
0
0.4
0.6
0.8
1
QG (nC)
ID = 0.5 A; VDS = 44 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
0.2
Rev. 02 — 26 April 2002
9 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
Fig 15. SOT23.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
Rev. 02 — 26 April 2002
10 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6:
Revision history
Rev Date
02
20020426
CPCN
Description
-
Product data (9397 750 09629)
Modifications
•
01
20000807
-
VGS data updated.
Product specification; initial version.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Product data
Rev. 02 — 26 April 2002
11 of 13
BSH111
Philips Semiconductors
N-channel enhancement mode field-effect transistor
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09629
Rev. 02 — 26 April 2002
12 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 26 April 2002
Document order number: 9397 750 09629
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