Data Sheet

PMF370XN
N-channel TrenchMOS extremely low level FET
Rev. 03 — 20 June 2008
Product data sheet
1. Product profile
1.1 General description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
„ Low threshold voltage
on-state resistance
„ Saves PCB space due to small footprint „ Suitable for low gate drive sources
(40 % smaller than SOT23)
„ Surface-mounted package
1.3 Applications
„ Driver circuits
„ Switching in portable appliances
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C
-
-
30
V
ID
drain current
Tsp = 25 °C; VGS = 4.5 V;
see Figure 1 and 3
-
-
0.87
A
Ptot
total power dissipation
Tsp = 25 °C; see Figure 2
-
-
0.56
W
VGS = 4.5 V; ID = 0.2 A;
Tj = 25 °C; see Figure 9 and
10
-
370
440
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
mbb076
SOT323 (SC-70)
S
3. Ordering information
Table 3.
Ordering information
Type number
PMF370XN
Package
Name
Description
Version
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C
-
30
V
VDGR
drain-gate voltage
Tj ≤ 150 °C; Tj ≥ 25 °C; RGS = 20 kΩ
-
30
V
VGS
gate-source voltage
-12
12
V
ID
drain current
Tsp = 25 °C; VGS = 4.5 V; see Figure 1 and 3
-
0.87
A
Tsp = 100 °C; VGS = 4.5 V; see Figure 1
-
0.55
A
IDM
peak drain current
Tsp = 25 °C; tp ≤ 10 μs; pulsed; see Figure 3
-
1.74
A
Ptot
total power dissipation
Tsp = 25 °C; see Figure 2
-
0.56
W
Tstg
storage temperature
-55
150
°C
Tj
junction temperature
-55
150
°C
Source-drain diode
IS
source current
Tsp = 25 °C
-
0.47
A
ISM
peak source current
Tsp = 25 °C; tp ≤ 10 μs; pulsed
-
0.94
A
PMF370XN_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
2 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
03aa25
120
03aa17
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
Tsp (°C)
Ider =
ID
ID(25°C )
× 100 %
P der =
Fig 1. Normalized continuous drain current as a
function of solder point temperature
P tot
P tot (25°C )
× 100 %
Fig 2. Normalized total power dissipation as a
function of solder point temperature
03an15
10
ID
(A)
200
Tsp (°C)
Limit RDSon = VDS / ID
tp = 10 μ s
1
100 μ s
1 ms
10-1
DC
10 ms
100 ms
10-2
10-1
1
10
102
VDS (V)
Ts p = 25°C; IDM is single pulse;VGS = 4.5V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMF370XN_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
3 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-sp)
thermal resistance
see Figure 4
from junction to solder
point
Min
Typ
Max
Unit
-
-
220
K/W
03an27
103
Zth(j-sp)
(K/W)
102
δ = 0.5
0.2
0.1
0.05
0.02
10
δ=
P
single pulse
tp
T
t
tp
T
1
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 1 μA; VGS = 0 V; Tj = -55 °C
27
-
-
V
ID = 1 μA; VGS = 0 V; Tj = 25 °C
30
-
-
V
-
-
1.8
V
ID = 0.25 mA; VDS = VGS;
Tj = 150 °C; see Figure 7 and 8
0.35
-
-
V
ID = 0.25 mA; VDS = VGS;
Tj = 25 °C; see Figure 7 and 8
0.5
1
1.5
V
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
μA
VDS = 30 V; VGS = 0 V; Tj = 70 °C
-
-
2
μA
VDS = 30 V; VGS = 0 V;
Tj = 150 °C
-
-
10
μA
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -12 V; VDS = 0 V;
Tj = 25 °C
-
10
100
nA
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
drain-source
breakdown voltage
gate-source threshold ID = 0.25 mA; VDS = VGS;
voltage
Tj = -55 °C; see Figure 7
drain leakage current
gate leakage current
PMF370XN_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
4 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
Table 6.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RDSon
drain-source on-state
resistance
VGS = 2.5 V; ID = 0.1 A;
Tj = 25 °C; see Figure 9 and 10
-
550
650
mΩ
VGS = 4.5 V; ID = 0.2 A;
Tj = 150 °C; see Figure 10
-
629
748
mΩ
VGS = 4.5 V; ID = 0.2 A;
Tj = 25 °C; see Figure 9 and 10
-
370
440
mΩ
ID = 1 A; VDS = 15 V;
VGS = 4.5 V; Tj = 25 °C;
see Figure 11 and 12
-
0.65
-
nC
-
0.14
-
nC
-
0.18
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
VDS = 25 V; VGS = 0 V;
f = 1 MHz; Tj = 25 °C;
see Figure 13
RG(ext) = 6 Ω; RL = 15 Ω;
VDS = 15 V; VGS = 4.5 V;
Tj = 25 °C
-
37
-
pF
-
8.5
-
pF
-
5.5
-
pF
-
6.5
-
ns
-
9.5
-
ns
-
14
-
ns
-
5.5
-
ns
-
0.81
1.2
V
Source-drain diode
source-drain voltage
VSD
IS = 0.3 A; VGS = 0 V; Tj = 25 °C;
see Figure 14
03ao00
2.5
VGS (V) = 4.5
ID
(A)
3.5
03ao02
2.5
ID
(X)
2
25 °C
Tj = 150 °C
2
3
1.5
1.5
1
2.5
0.5
2
1
0.5
1.8
0
0
0
0.5
1
1.5
2
0
VDS (V)
2
3
4
5
VGS (V)
T j = 25°C
T j = 25°C and 150°C;VDS > ID × R DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PMF370XN_3
Product data sheet
1
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
5 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
03al82
2
VGS (th)
(V)
03an65
10−3
ID
(A)
1.5
max
1
10−4
typ
min
10−5
typ
max
min
0.5
10−6
0
−60
0
60
120
180
0
0.8
1.2
1.6
VGS (V)
ID = 0.25 A;VDS = VGS
T j = 25°C;VDS = 5V
Fig 7. Gate-source threshold voltage as a function of
junction temperature
Fig 8. Subthreshold drain current as a function of
gate-source voltage
03ao01
1
VGS (V) = 2.5
RDSon
(Ω)
0.4
Tj (°C)
03al00
1.8
3
a
0.8
3.5
1.2
0.6
4.5
0.4
0.6
0.2
0
0
0.5
1
1.5
2
2.5
ID (A)
T j = 25°C
0
−60
a=
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
60
120
180
Tj (°C)
R DSon
R DSon (25°C )
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMF370XN_3
Product data sheet
0
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
6 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
03ao05
5
VGS
(V)
ID = 1 A
Tj = 25 °C
4
VDS
ID
VDS = 15 V
3
VGS(pl)
2
VGS(th)
VGS
1
QGS1
QGS2
QGS
QGD
QG(tot)
0
0
0.2
0.4
0.6
0.8
QG (nC)
003aaa508
ID = 1 A;VDS = 15V
Fig 11. Gate charge waveform definitions
Fig 12. Gate-source voltage as a function of gate
charge; typical values
03ao04
102
03ao03
1
VGS = 0 V
IS
(A)
0.8
Ciss
C
(pF)
0.6
10
Coss
0.4
Crss
0.2
Tj = 25 °C
150 °C
1
10−1
1
102
10
0
0
0.2
0.4
0.6
VDS (V)
VGS = 0V; f = 1M H z
T j = 25°C and 150°C;VGS = 0V
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 14. Source current as a function of source-drain
voltage; typical values
PMF370XN_3
Product data sheet
0.8
1
VSD (V)
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
7 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
7. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
IEC
SOT323
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 15. Package outline SOT323 (SC-70)
PMF370XN_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
8 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
8. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
1.3
1
0.5
(3×)
solder paste
occupied area
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 16. SOT323 (SC-70)
PMF370XN_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
9 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
9. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMF370XN_3
20080620
Product data sheet
-
PMF370XN_2
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate
PMF370XN_2
20051206
Product data sheet
-
PMF370XN-01
PMF370XN-01
20040211
Product data sheet
-
-
PMF370XN_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
10 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PMF370XN_3
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 03 — 20 June 2008
11 of 12
PMF370XN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 June 2008
Document identifier: PMF370XN_3
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