Data Sheet

PMV56XN
µTrenchMOS™ extremely low level FET
Rev. 02 — 24 June 2004
Product data
M3D088
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
■ TrenchMOS™ technology
■ Low threshold voltage
■ Very fast switching
■ Subminiature surface mount package.
1.3 Applications
■ Battery management
■ High-speed switch
■ Low power DC-to-DC converter.
1.4 Quick reference data
■ VDS ≤ 20 V
■ Ptot ≤ 1.92 W
■ ID ≤ 3.76 A
■ RDSon ≤ 85 mΩ
2. Pinning information
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
Simplified outline
Symbol
3
d
g
1
2
Top view
SOT23
MSB003
mbb076
s
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
3. Ordering information
Table 2:
Ordering information
Type number
PMV56XN
Package
Name
Description
Version
SOT23
Plastic surface mounted package; 3 leads
SOT23
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
Conditions
25 °C ≤ Tj ≤ 150 °C
Min
Max
Unit
-
20
V
-
±8
V
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
-
3.76
A
Tsp = 70 °C; VGS = 4.5 V; Figure 2
-
3
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
15
A
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
-
1.92
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
-
1.6
A
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
Rev. 02 — 24 June 2004
2 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
03aa17
120
03aa25
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
Tsp (°C)
200
0
P tot
P der = ----------------------- × 100%
P
°
50
100
150
Tsp (°C)
200
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ap06
102
ID
(A)
Limit RDSon = VDS / ID
tp = 10 µ s
10
100 µ s
1 ms
1
10 ms
DC
100 ms
10-1
10-2
10-1
1
102
10
VDS (V)
Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
Rev. 02 — 24 June 2004
3 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
thermal resistance from junction to solder point Figure 4
Rth(j-sp)
-
-
65
K/W
5.1 Transient thermal impedance
03ap05
102
Zth(j-sp)
(K/W)
δ = 0.5
0.2
10
0.1
0.05
δ=
P
0.02
tp
T
single pulse
t
tp
T
1
10-4
10-3
10-2
10-1
1
tp (s)
10
Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
Rev. 02 — 24 June 2004
4 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
ID = 10 µA; VGS = 0 V
20
-
-
V
0.65
-
-
V
Tj = 25 °C
-
0.01
1.0
µA
Tj = 55 °C
-
-
10
µA
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
IDSS
drain-source leakage current
VDS = 20 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±8 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8
-
56
85
mΩ
VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8
-
77
115
mΩ
VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13
Dynamic characteristics
Qg(tot)
total gate charge
-
5.4
-
nC
Qgs
gate-source charge
-
0.65
-
nC
Qgd
gate-drain (Miller) charge
-
1.6
-
nC
Ciss
input capacitance
-
230
-
pF
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11
Coss
output capacitance
-
125
-
pF
Crss
reverse transfer capacitance
-
80
-
pF
td(on)
turn-on delay time
-
12
-
ns
tr
rise time
-
23
-
ns
td(off)
turn-off delay time
-
50
-
ns
tf
fall time
-
34
-
ns
-
0.8
1.2
V
VDD = 10 V; RL = 5.5 Ω; VGS = 4.5 V; RG = 6 Ω
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
Rev. 02 — 24 June 2004
5 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
03ae93
10
4.5 V 3 V
ID
(A)
8
03ae95
10
2.5 V
ID
(A)
VDS > ID x RDSon
8
2V
6
6
4
4
VGS = 1.5 V
2
2
Tj = 150 °C
0
25 °C
0
0
0.5
1
VDS (V) 1.5
Tj = 25 °C
0
2
3
VGS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ae94
0.1
03ad57
2
VGS = 2.5 V
Tj = 25 °C
RDSon
(Ω)
1
a
0.09
1.5
0.08
3V
1
0.07
0.5
0.06
4.5 V
0.05
0
0
2
4
6
8 I (A) 10
D
Tj = 25 °C
-60
60
120
Tj (°C)
180
R DSon
a = ---------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
0
Rev. 02 — 24 June 2004
6 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
03ag05
VGS(th)
(V)
03ah78
10-1
1.2
ID
(A)
10-2
typ
0.8
10-3
min
min
typ
10-4
0.4
10-5
10-6
0
-60
0
60
120
0
180
0.4
Tj (ºC)
0.8
VGS (V)
1.2
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ae98
103
C
(pF)
Ciss
102
Coss
Crss
10
10-1
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
Rev. 02 — 24 June 2004
7 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
03ae97
10
IS
(A)
8
03ae99
5
VGS
(V)
4
VGS = 0 V
ID = 3.6 A
Tj = 25 ˚C
VDD = 10 V
6
3
4
2
2
1
150 °C
Tj = 25 °C
0
0
0
0.3
0.6
0.9
VSD (V)
1.2
0
4
6
QG (nC)
Tj = 25 °C and 150 °C; VGS = 0 V
ID = 3.6 A; VDD = 10 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
2
Rev. 02 — 24 June 2004
8 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
7. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
Fig 14. SOT23.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
Rev. 02 — 24 June 2004
9 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
8. Revision history
Table 6:
Revision history
Rev Date
02
20040624
CPCN
Description
-
Product data (9397 750 13495)
Modifications:
•
•
•
•
•
01
20030226
-
Updated to latest standards.
Section 1.4 “Quick reference data” ID and Ptot increased.
Section 4 “Limiting values” ID, IDM, Ptot and IS increased.
Section 4 “Limiting values” Figure 3 modified.
Section 5 “Thermal characteristics” Figure 4 modified.
Product data (9397 750 11096).
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Product data
Rev. 02 — 24 June 2004
10 of 12
PMV56XN
Philips Semiconductors
µTrenchMOS™ extremely low level FET
9. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13495
Rev. 02 — 24 June 2004
11 of 12
Philips Semiconductors
PMV56XN
µTrenchMOS™ extremely low level FET
Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
5.1
6
7
8
9
10
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2004.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 24 June 2004
Document order number: 9397 750 13495
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