IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGW100N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW100N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology Features: C TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency 1 Packagepindefinition: 2 3 •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IGW100N60H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 100A 1.85V 175°C G100H603 PG-TO247-pin123 2 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit 600 V IC 140.0 120.0 A ICpuls 300.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤175°C - 300.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 714.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C VCE Collector-emitter voltage 1) vjmax DCcollectorcurrent,limitedbyT TC=25°Cvaluelimitedbybondwire TC=100°C Pulsedcollectorcurrent,tplimitedbyTvjmax2) 3) µs 5 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,4) junction - case Rth(j-c) 0.21 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 600 - - - 1.85 2.10 2.25 2.30 - 4.1 5.1 5.7 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=100.0A Tvj=25°C Tvj=125°C Tvj=175°C V V Gate-emitter threshold voltage VGE(th) IC=1.60mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=100.0A - 50.0 - S V 40.0 µA 6700.0 1) For maximal distance of 5mm between soldering point and mould Additionally tp<10ms due to bondwire Additionally tp<10ms due to bondwire 4) Thermal resistance of grease Rth(c-s) (case to heat sink) more than 0.1 K/W not included. 2) 3) 4 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 6100 - - 210 - - 180 - VCC=480V,IC=100.0A, VGE=15V - 625.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz pF 890 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 47 - ns - 265 - ns - 30 - ns - 3.70 - mJ - 1.90 - mJ - 5.60 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=100.0A, VGE=0.0/15.0V, rG=3.5Ω,Lσ=25nH, Cσ=50pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IDW50E60) reverse recovery. SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 28 - ns - 44 - ns - 310 - ns - 23 - ns - 4.70 - mJ - 2.30 - mJ - 7.00 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=100.0A, VGE=0.0/15.0V, rG=3.5Ω,Lσ=25nH, Cσ=50pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IDW50E60) reverse recovery. 5 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration 160 140 120 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 100 80 60 TC=80° 40 TC=110° 10 tp=1µs 10µs 50µs 1 100µs 200µs 20 500µs 0 10 0.1 100 DC 1 f,SWITCHINGFREQUENCY[kHz] 10 100 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,D=0.5,VCE=400V,VGE=15/0V, rG=3.5Ω,Rth(j-c)=0.21K/W) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V, Rth(j-c)=0.21K/W) 160 140 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 715 572 429 286 120 100 80 60 40 143 20 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C,Rth(j-c)=0.21K/W) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C,Rth(j-c)=0.21K/W) 6 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration 300 300.0 VGE=20V VGE=20V 17V 17V 250.0 15V 13V 11V 200 7V 11V 9V 7V 150.0 100 100.0 50 0 13V 200.0 9V 150 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 250 50.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 4.0 0.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 1.5 2.0 2.5 3.0 3.5 4.0 3.5 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 200 IC,COLLECTORCURRENT[A] 1.0 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 250 150 100 50 0 0.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 2 4 6 8 10 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 VGE,GATE-EMITTERVOLTAGE[V] IC=30A IC=60A IC=120A IC=240A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 7 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration 1000 1E+4 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 10 td(off) tf td(on) tr 1 0 20 40 60 80 100 1 100 120 140 160 180 200 0 5 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=3.5Ω,Dynamictestcircuitin Figure E) 20 25 6.0 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 15 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=100A,Dynamictestcircuitin Figure E) 1000 100 10 1 10 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 5.0 4.0 3.0 2.0 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=100A,rG=3.5Ω,Dynamictestcircuitin Figure E) typ. min. max. 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1.6mA) 8 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration 20 30 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 15 10 5 0 0 20 40 60 80 25 20 15 10 5 0 100 120 140 160 180 200 0 5 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=3.5Ω,Dynamictestcircuitin Figure E) 20 25 30 9 Eoff Eon Ets 8 E,SWITCHINGENERGYLOSSES[mJ] 7 E,SWITCHINGENERGYLOSSES[mJ] 15 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=100A,Dynamictestcircuitin Figure E) 8 6 5 4 3 2 1 0 10 rG,GATERESISTOR[Ω] Eoff Eon Ets 7 6 5 4 3 2 1 25 50 75 100 125 150 0 200 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=100A,rG=3.5Ω,Dynamictestcircuitin Figure E) 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 9 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=100A,rG=3.5Ω,Dynamictestcircuitin Figure E) Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration 15 1E+4 Ciss Coss Crss C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 120V 480V 10 5 0 0 100 200 300 400 500 1000 100 10 600 0 QGE,GATECHARGE[nC] 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 1600 13 1400 12 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] Figure 17. Typicalgatecharge (IC=100A) 1200 1000 800 600 400 200 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 11 10 9 8 7 6 5 10 12 14 16 18 4 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,Tvj≤150°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj≤150°C) 10 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 0.1 D=0.5 0.2 0.1 0.01 0.05 0.02 0.01 single pulse 0.001 i: 1 2 3 4 5 6 ri[K/W]: 4.8E-3 0.03727104 0.03725716 0.1264856 6.3E-3 1.1E-3 τi[s]: 3.6E-5 2.8E-4 2.9E-3 0.01660206 0.2281022 2.482629 1E-4 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) 11 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 12 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration t 13 Rev.1.2,2013-02-07 IGW100N60H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IGW100N60H3 Revision:2013-02-07,Rev.1.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-07-05 Preliminary data sheet 1.2 2013-02-07 Preliminary data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 14 Rev.1.2,2013-02-07