Data Sheet

PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Rev. 01 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ Improved mechanical and thermal
characteristics
„ High efficiency gains in switching
power converters
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Motor control
„ Lithium-ion battery protection
„ Server power supplies
„ Load switching
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C
-
-
80
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1
-
-
60
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
Tj
junction temperature
-
-
106
W
-55
-
175
°C
-
-
70
mJ
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V;
avalanche energy
RGS = 50 Ω; unclamped
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
-
8
-
nC
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
-
37
-
nC
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12
-
-
19.8
mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13
-
9.7
12.9
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
S
mbb076
1 2 3 4
SOT669
(LFPAK)
3. Ordering information
Table 3.
Ordering information
Type number
PSMN013-80YS
Package
Name
Description
Version
LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C
-
80
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ
VGS
gate-source voltage
ID
drain current
-
80
V
-20
20
V
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
42
A
VGS = 10 V; Tmb = 25 °C; see Figure 1
-
60
A
IDM
peak drain current
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
-
233
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
106
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering
temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
60
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
233
A
-
70
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V;
drain-source avalanche RGS = 50 Ω; unclamped
energy
PSMN013-80YS_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
2 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad230
60
ID
(A)
Pder
(%)
40
80
20
40
0
0
0
Fig 1.
03aa16
120
50
100
150
Tmb (°C)
200
0
50
100
150
200
Tmb (°C)
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aad314
103
ID
(A)
10μ s
Limit RDSon = VDS / ID
102
100μ s
10
1
1ms
DC
10ms
100ms
10-1
1
Fig 3.
10
10
2
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN013-80YS_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
3 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-mb)
thermal resistance from see Figure 4
junction to mounting
base
Min
Typ
Max
Unit
-
0.54
1.4
K/W
003aac657
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
δ=
P
tp
T
single shot
t
tp
10
T
-3
10-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN013-80YS_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
4 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
6. Characteristics
Table 6.
Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
73
-
-
V
ID = 250 µA; VGS = 0 V; Tj = 25 °C
80
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 10; see Figure 11
1
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 10; see Figure 11
-
-
4.6
V
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 10; see Figure 11
2
3
4
V
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
RDSon
RG
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 80 V; VGS = 0 V; Tj = 25 °C
-
-
3
µA
VDS = 80 V; VGS = 0 V; Tj = 125 °C
-
-
40
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 10 V; ID = 15 A; Tj = 175 °C; see
Figure 12
-
-
31
mΩ
VGS = 10 V; ID = 15 A; Tj = 100 °C; see
Figure 12
-
-
19.8
mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C; see
Figure 13
-
9.7
12.9
mΩ
-
0.68
-
Ω
ID = 0 A; VDS = 0 V; VGS = 10 V
-
31
-
nC
ID = 25 A; VDS = 40 V; VGS = 10 V; see
Figure 14; see Figure 15
-
37
-
nC
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGS(th)
pre-threshold
gate-source charge
QGS(th-pl)
ID = 25 A; VDS = 40 V; VGS = 10 V; see
Figure 14; see Figure 15
-
11
-
nC
-
7
-
nC
post-threshold
gate-source charge
-
4
-
nC
QGD
gate-drain charge
-
8
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 40 V
-
4.8
-
V
VDS = 40 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
2420
-
pF
-
224
-
pF
-
125
-
pF
-
20
-
ns
-
15
-
ns
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
37
-
ns
tf
fall time
-
10
-
ns
VDS = 40 V; RL = 1.6 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
PSMN013-80YS_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
5 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Table 6.
Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; see
Figure 17
-
0.84
1.2
V
trr
reverse recovery time
-
52
-
ns
Qr
recovered charge
IS = 50 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 40 V
-
91
-
nC
003aad181
60
ID
(A)
20 10 8 6 5.5
50
003aad187
4000
C
(pF)
5
Ciss
3000
40
2000
30
Crss
20
4.5
1000
10
VGS (V) = 4
0
0
0
Fig 5.
ID
(A)
0.5
1
1.5
VDS (V)
0
2
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
003aad183
70
3
6
9
VGS (V)
12
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aad189
45
RDSon
(mΩ)
60
35
50
40
25
30
Tj = 150 °C
20
15
Tj = 175 °C
10
Tj = 25 °C
0
5
0
Fig 7.
2
4
VGS (V)
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
Fig 8.
10
15
VGS (V)
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN013-80YS_1
Product data sheet
5
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
6 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad188
80
03aa35
10−1
ID
(A)
gfs
(S)
min
10−2
typ
max
60
10−3
40
10−4
20
10−5
10−6
0
0
Fig 9.
20
40
60
ID (A)
80
003aad280
VGS(th)
(V)
6
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aad045
2.5
max
2.0
typ
1.5
min
1.0
3
2
1
0.5
0
60
120
180
0.0
-60
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of
junction temperature
-30
0
30
60
90
120
150 180
Tj (°C)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN013-80YS_1
Product data sheet
4
a
4
0
−60
2
VGS (V)
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
5
0
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
7 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad182
25
VGS (V) = 5
VDS
RDSon
(mΩ)
ID
20
VGS(pl)
5.5
VGS(th)
15
6
VGS
8
10
20
10
QGS1
QGS2
QGS
QGD
QG(tot)
003aaa508
5
0
20
40
ID (A)
60
Fig 14. Gate charge waveform definitions
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
003aad185
10
VGS
(V)
8
003aad186
104
C
(pF)
64V
16V
Ciss
VDS = 40V
6
103
4
Coss
2
Crss
0
0
10
20
30
QG (nC)
40
Fig 15. Gate-source voltage as a function of gate
charge; typical values
102
10-1
10
VDS (V)
102
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN013-80YS_1
Product data sheet
1
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
8 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad184
100
IS
(A)
80
60
40
Tj = 150 °C
20
Tj = 175 °C
Tj = 25 °C
0
0
0.3
0.6
0.9
VSD (V)
1.2
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN013-80YS_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
9 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
A2
A
E
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w M A
b
1/2
X
c
e
A
(A 3)
A1
C
θ
L
detail X
y C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A1
A2
A3
b
b2
1.20 0.15 1.10
0.50 4.41
0.25
1.01 0.00 0.95
0.35 3.62
mm
b3
b4
2.2
2.0
0.9
0.7
c
D (1)
c2
D1(1)
E(1) E1(1)
max
0.25 0.30 4.10
4.20
0.19 0.24 3.80
5.0
4.8
3.3
3.1
e
H
L
L1
L2
w
y
θ
1.27
6.2
5.8
0.85
0.40
1.3
0.8
1.3
0.8
0.25
0.1
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT669
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-10-13
06-03-16
MO-235
Fig 18. Package outline SOT669 (LFPAK)
PSMN013-80YS_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
10 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN013-80YS_1
20090625
Product data sheet
-
-
PSMN013-80YS_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
11 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PSMN013-80YS_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 25 June 2009
12 of 13
PSMN013-80YS
NXP Semiconductors
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 25 June 2009
Document identifier: PSMN013-80YS_1
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