Transistors 2SC4626J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 ■ Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C (0.375) 1.60±0.05 0.10 max. 5˚ Parameter 5˚ 2 (0.80) 1 0.27±0.02 0.70+0.05 –0.03 • Optimum for RF amplification of FM/AM radios • High transition frequency fT • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.85+0.05 –0.03 3 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Marking Symbol: V ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Conditions Min Typ Max Unit 0.1 µA hFE VCB = 10 V, IE = −1 mA 70 Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω Common-emitter reverse transfer capacitance Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.9 1.5 pF Forward current transfer ratio * 220 250 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank B C No-rank hFE 70 to 140 110 to 220 70 to 220 Product of no-rank is not classified and have no indication for rank. Publication date: December 2002 SJC00281BED 1 2SC4626J IC VCE IC I B 100 16 120 14 IB = 100 µA 12 80 µA Ta = 25°C 90 80 60 40 10 6 0 0 60 80 100 120 140 2 4 6 8 10 12 50 40 30 20 VCE = 10 V Ta = 85°C 80 60 −25°C 25°C 40 20 10 0.4 0.6 0.8 1.0 0 1.2 0 Base-emitter voltage VBE (V) 0.2 25°C −25°C 100 50 0 1 10 Collector current IC (mA) 100 Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE Ta = 85°C 150 0.6 0.8 1.0 1.2 1.4 2 10 1 f = 1 MHz Ta = 25°C 0 5 10 15 20 25 30 Collector-base voltage VCB (V) SJC00281BED 4 6 8 10 12 Base current IB (mA) 10 IC / IB = 10 Ta = 85°C 1 −25°C 25°C 0.1 0.01 0.1 1 10 100 Collector current IC (mA) Cob VCB VCE = 10 V 200 0.4 Base-emitter voltage VBE (V) hFE IC 250 0 VCE(sat) IC 120 Collector current IC (mA) Base current IB (mA) 60 0.2 30 0 0 100 0 40 IC VBE 70 0 50 Collector-emitter voltage VCE (V) VCE = 10 V Ta = 25°C 80 60 10 IB VBE 90 70 20 20 µA Collector-emitter saturation voltage VCE(sat) (V) 40 40 µA 4 2 20 60 µA 8 20 0 Collector current IC (mA) 100 Ambient temperature Ta (°C) 2 VCE = 10 V Ta = 25°C 80 Collector current IC (mA) Collector power dissipation PC (mW) PC Ta 140 35 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL