Data Sheet

PMZ250UN
N-channel TrenchMOS extremely low level FET
Rev. 01 — 21 February 2008
Product data sheet
BOTTOM VIEW
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
n Profile 55 % lower than SOT23
n Lower on-state resistance
n Leadless package
n Footprint 90 % smaller than SOT23
n Low threshold voltage
n Fast switching
1.3 Applications
n Driver circuits
n DC-to-DC converters
n Load switching in portable appliances
1.4 Quick reference data
n VDS ≤ 20 V
n RDSon ≤ 300 mΩ
n ID ≤ 2.28 A
n Ptot ≤ 2.50 W
2. Pinning information
Table 1.
Pinning
Pin
Description
1
gate (G)
Simplified outline
2
source (S)
1
3
drain (D)
2
Symbol
D
3
Transparent
top view
SOT883 (SC-101)
G
mbb076
S
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
3. Ordering information
Table 2.
Ordering information
Type number
PMZ250UN
Package
Name
Description
Version
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
4. Limiting values
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
20
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
20
V
VGS
gate-source voltage
-
±8
V
ID
drain current
Tsp = 25 °C; VGS = 4.5 V; see Figure 2 and 3
-
2.28
A
Tsp = 100 °C; VGS = 4.5 V; see Figure 2
-
1.44
A
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
4.56
Ptot
total power dissipation
Tsp = 25 °C; see Figure 1
-
2.50
W
Tstg
storage temperature
-
−55
+150
°C
Tj
junction temperature
-
−55
+150
°C
Source-drain diode
IS
source current
Tsp = 25 °C
-
2.28
A
ISM
peak source current
Tsp = 25 °C; pulsed; tp ≤ 10 µs
-
4.56
A
all pins
-
human body model; C = 100pF; R = 1.5 kΩ
-
60
V
machine model; C = 200 pF
-
30
V
Electrostatic discharge
Vesd
electrostatic discharge voltage
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
2 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
003aac031
120
003aac033
120
Ider
( %)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
0
200
50
100
150
200
Tsp (°C)
Tsp (°C)
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
ID
I der = -------------------- × 100 %
I D ( 25°C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Normalized continuous drain current as a
function of solder point temperature
003aac202
102
ID
(A)
Limit RDSon = VDS / ID
tp = 10 µs
10
100 µs
1
1 ms
10 ms
100 ms
DC
10−1
10−2
10−1
1
102
10
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
3 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol Parameter
thermal resistance from junction to solder point
Rth(j-sp)
thermal resistance from junction to ambient
Rth(j-a)
[1]
Conditions
see Figure 4
minimum footprint
[1]
Min
Typ
Max
Unit
-
-
50
K/W
-
670
-
K/W
Mounted on a printed-circuit board; vertical in still air.
003aab831
102
Zth(j-sp)
(K/W)
δ = 0.5
0.2
10
0.1
0.05
δ=
P
0.02
single pulse
tp
T
t
tp
T
1
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
4 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
20
-
-
V
Tj = −55 °C
18
-
-
V
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
ID = 10 µA; VGS = 0 V
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
0.45
0.7
0.95
V
Tj = 150 °C
0.25
-
-
V
Tj = −55 °C
-
-
1.15
V
VDS = 20 V; VGS = 0 V
Tj = 25 °C
-
-
1
µA
Tj = 150 °C
-
-
100
µA
-
10
100
nA
IGSS
gate leakage current
VGS = ±8 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8
Tj = 25 °C
-
250
300
mΩ
Tj = 150 °C
-
400
480
mΩ
VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8
-
320
400
mΩ
VGS = 1.8 V; ID = 0.075 A; see Figure 6 and 8
-
420
600
mΩ
ID = 1 A; VDS = 10 V; VGS = 4.5 V; see
Figure 11 and 12
-
0.89
-
nC
-
0.13
-
nC
-
0.18
-
nC
-
45
-
pF
-
11
-
pF
-
7
-
pF
-
4.5
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
VGS = 0 V; VDS = 20 V; f = 1 MHz; see
Figure 14
VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω
tr
rise time
-
10
-
ns
td(off)
turn-off delay time
-
18.5
-
ns
tf
fall time
-
5
-
ns
-
0.80
1.2
V
Source-drain diode
VSD
source-drain voltage
IS = 0.3 A; VGS = 0 V; see Figure 13
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
5 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
03an02
2.5
4.5
ID
(A)
3
2.5
03an03
1
VGS (V) = 1.8
RDSon
(Ω)
2
2
0.8
2
1.5
0.6
2.5
1.8
1
0.4
3
4.5
VGS (V) = 1.5
0.5
0.2
0
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
VDS (V)
2.5
ID (A)
Tj = 25 °C
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
03an04
2.5
ID
(A)
003aac024
2.0
a
2
25 °C
Tj = 150 °C
1.5
1.5
1.0
1
0.5
0.5
0
0
1
2
3
4
0
−60
0
Tj = 25 °C and 150 °C; VDS > ID × RDSon
120
180
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMZ250UN_1
Product data sheet
60
Tj (°C)
VGS (V)
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
6 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
03aj65
1.2
VGS(th)
(V)
03am43
10−3
ID
(A)
0.9
max
10−4
min
typ
max
typ
0.6
10−5
min
0.3
10−6
0
−60
0
60
120
180
0
0.4
0.8
Tj (°C)
1.2
VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 0.25 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03an07
5
ID = 1 A
Tj = 25 °C
VDS = 10 V
VGS
(V)
4
VDS
ID
3
VGS(pl)
2
VGS(th)
VGS
1
QGS1
QGS2
QGS
0
0
0.2
0.4
0.6
0.8
1
QG (nC)
QGD
QG(tot)
003aaa508
ID = 1 A; VDS = 10 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
7 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
03an97
1
03an06
102
VGS = 0 V
IS
(A)
0.8
Ciss
C
(pF)
0.6
Coss
10
Crss
0.4
0.2
150 °C
Tj = 25 °C
0
0
0.2
0.4
0.6
0.8
1
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
1
10−1
102
10
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain
voltage; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMZ250UN_1
Product data sheet
1
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
8 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
7. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT883
JEITA
SC-101
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
Fig 15. Package outline SOT833 (SC-101)
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
9 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
8. Soldering
1.30
R = 0.05 (12×)
0.30
R = 0.05 (12×)
solder lands
0.35
(2×)
solder resist
0.90 0.20
0.60 0.70 0.80
occupied area
0.25
(2×)
solder paste
0.30
(2×)
0.30
0.40
(2×)
0.40
0.50
(2×)
0.50
mbl873
Dimensions in mm
Fig 16. Reflow soldering footprint for SOT883
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
10 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMZ250UN_1
20080221
Product data sheet
-
-
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
11 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PMZ250UN_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 21 February 2008
12 of 13
PMZ250UN
NXP Semiconductors
N-channel TrenchMOS extremely low level FET
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 21 February 2008
Document identifier: PMZ250UN_1
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