Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Unit VR 30 V VRRM 30 V 300 mA Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single IFM Double*2 1.45 0.95 + 0.1 0.16 − 0.06 1 : Cathode 1 2 : Cathode 2 JEDEC : TO-236 3 : Anode 1, 2 EIAJ : SC-59 Mini Type Package(3-pin) 200 IF(AV) 100 Double*2 Non-repetitive peak forward surge current*1 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Rating 3 0.8 + 0.2 1.1 − 0.1 Symbol 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.65 ± 0.15 + 0.1 • Two MA3X786s are contained in one package (anode common) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 1.5 0.95 + 0.2 2.9 − 0.05 ■ Features 1.9 ± 0.2 0.65 ± 0.15 + 0.25 − 0.05 0.4 − 0.05 For super-high speed switching circuit For small current rectification Marking Symbol: M3Y mA 70 Internal Connection IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 3 2 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 15 µA 0.55 V Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 20 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 2 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3X786D Schottky Barrier Diodes (SBD) IF V F VF Ta Forward current IF (mA) − 20°C Ta = 125°C 10 Forward voltage VF (V) 75°C 25°C 102 1 10−1 10−2 1.0 104 0.8 103 0.6 0.4 IF = 100 mA 0.2 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) Ct VR 40 80 120 160 200 IR T a 103 Reverse current IR (µA) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 16 12 8 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 VR = 30 V 3V 1V 102 10 1 4 30 10−1 −40 102 75°C 10 25°C 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 104 20 Ta = 125°C 10−1 0 IR VR 1 10 mA 3 mA Ambient temperature Ta (°C) 24 Reverse current IR (µA) 103 200 30