Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH103
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1998 Jan 30
File under Discrete Semiconductors, SC13b
1998 Feb 11
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
FEATURES
PINNING - SOT23
• Very low threshold
PIN
SYMBOL
• High-speed switching
DESCRIPTION
1
g
gate
• No secondary breakdown
2
s
source
• Direct interface to C-MOS, TTL etc.
3
d
drain
APPLICATIONS
• Power management
handbook, halfpage
3
d
• DC to DC converters
• Battery powered applications
• ‘Glue-logic’; interface between logic blocks and/or
periphery
g
• General purpose switch.
s
1
2
Top view
MAM273
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETERS
CONDITIONS
MIN.
MAX.
UNIT
−
30
V
−
1
V
−
±8
V
VDS = VGS ; ID = 1 mA
0.4
−
V
drain current (DC)
Ts = 80 °C
−
0.85
A
drain-source on-state resistance
VGS = 2.5 V; ID = 0.5 A
−
0.5
Ω
total power dissipation
Ts = 80 °C
−
0.5
W
VDS
drain-source voltage (DC)
VSD
source-drain diode forward voltage
VGS
gate-source voltage (DC)
VGSth
gate-source threshold voltage
ID
RDSon
Ptot
VGD = 0; IS = 0.5 A
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Feb 11
2
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
30
V
VGS
gate-source voltage (DC)
−
±8
V
ID
drain current (DC)
Ts = 80 °C; note 1
−
0.85
A
IDM
peak drain current
note 2
−
3.4
A
Ptot
total power dissipation
Ts = 80 °C
−
0.5
W
Tamb = 25 °C; note 3
−
0.75
W
Tamb = 25 °C; note 4
−
0.54
W
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
Source-drain diode
IS
source current (DC)
Ts = 80 °C
−
0.5
A
ISM
peak pulsed source current
note 2
−
2
A
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.
MBK502
MGM190
0.6
10
handbook, halfpage
handbook, halfpage
IDS
Ptot
(A)
(W)
(2)
1
(1)
0.4
10−1
tp
δ= T
P
0.2
DC
10−2
t
tp
10−3
10−1
0
0
40
80
120
Ts (°C)
160
T
1
10
δ = 0.01; Ts = 80 °C.
(1) RDSon limitation.
(2) Pulsed.
Fig.2 Power derating curve.
1998 Feb 11
Fig.3 SOAR.
3
VDS (V)
102
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
140
K/W
thermal resistance from junction to soldering point
Rth j-s
MBK503
103
handbook, full pagewidth
Rth j-s
(K/W)
δ=1
0.75
102
0.5
0.33
0.2
0.1
10
δ=
P
0.05
tp
T
0.02
t
tp
0.01
T
1
10−6
Fig.4
0
10−5
10−4
10−3
10−2
10−1
tp (s)
1
Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1998 Feb 11
4
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 10 µA
30
−
−
V
VGSth
gate-source threshold voltage
VGS = VDS ; ID = 1 mA
0.4
−
−
V
IDSS
drain-source leakage current
VGS = 0; VDS = 24 V
−
−
100
nA
IGSS
gate leakage current
VGS = ±8 V; VDS = 0
−
−
±100
nA
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 0.5 A
−
−
0.4
Ω
VGS = 2.5 V; ID = 0.5 A
−
−
0.5
Ω
VGS = 1.8 V; ID = 0.25 A
−
−
0.6
Ω
Ciss
input capacitance
VGS = 0; VDS = 24 V; f = 1 MHz
−
83
−
pF
Coss
output capacitance
VGS = 0; VDS = 24 V; f = 1 MHz
−
27
−
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = 24 V; f = 1 MHz
−
14
−
pF
QG
total gate charge
VGS = 4.5 V; VDD = 15 V;
ID = 0.5 A; Tamb = 25 °C
−
2100
−
pC
QGS
gate-source charge
VDD = 15 V; ID = 0.5 A;
Tamb = 25 °C
−
95
−
pC
QGD
gate-drain charge
VDD = 15 V; ID = 0.5 A;
Tamb = 25 °C
−
670
−
pC
Switching times
td(on)
turn-on delay time
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
−
2.5
−
ns
tf
fall time
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
−
3.5
−
ns
ton
turn-on switching time
VGS = 0 to 8 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
−
6
−
ns
td(off)
turn-off delay time
VGS = 8 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
−
20
−
ns
tr
rise time
VGS = 8 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
−
7
−
ns
toff
turn-off switching time
VGS = 8 to 0 V; VDD = 15 V;
ID = 0.5 A; Rgen = 6 Ω
−
27
−
ns
Source-drain diode
VSD
source-drain diode forward
voltage
VGD = 0; IS = 0.5 A
−
−
1
V
trr
reverse recovery time
IS = 0.5 A; di/dt = −100 A/µs
−
25
−
ns
1998 Feb 11
5
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
handbook, full pagewidth
BSH103
VDD
90 %
Vin
RL
10 %
0
Vout
90 %
Vout
Vin
10 %
0
td(off)
td(on)
tf
MAM274
tr
ton
toff
Fig.5 Switching times test circuit with input and output waveforms.
MBK507
5
handbook, halfpage
16
VGS
14
(V)
MBK505
4
handbook, halfpage
(1)(2) (3)(4) (5)
VDS
ID
(A)
(V)
4
(6)
3
12
10
3
(7)
2
8
(1)
(2)
2
6
1
(8)
4
1
(9)
2
0
0
2
4
6
8
QG (pC)
Tamb = 25 °C; tp = 300 µs; δ = 0.
(1)
(2)
(3)
(4)
VDD = 15 V; ID = 0.5 A; Tamb = 25 °C.
(1) VDS.
(2) VGS.
Fig.6
Gate-source and drain-source voltages as
functions of total gate charge; typical values.
1998 Feb 11
10
VDS (V)
2200
2000
1800
1800
1600
1000
1000
800
600
400
200
0
0
0
VGS = 7.5 V.
VGS = 5.5 V.
VGS = 4.5 V.
VGS = 3.5 V.
Fig.7
6
(5)
(6)
(7)
(8)
VGS = 3 V.
VGS = 2.5 V.
VGS = 2 V.
VGS = 1.5 V.
(9) VGS = 1 V.
Output characteristics; typical values.
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
MBK506
4
MBK504
300
handbook, halfpage
handbook, halfpage
ID
(A)
C
(pF)
3
200
2
100
Ciss
1
Coss
Crss
0
0
0
1
2
VGS (V)
0
3
20
VDS (V)
30
VGS = 0 ; f = 1 MHz; Tamb = 25 °C.
VDS = 10 V; Tamb = 25 °C; tp = 300 µs; δ = 0.
Fig.9
Fig.8
10
Capacitance as a function of drain-source
voltage; typical values.
Transfer characteristic; typical values.
MBK508
2
MBK509
10
handbook, halfpage
handbook, halfpage
IS
(A)
RDSon
1.6
(Ω)
(1) (2) (3) (4)
1.2
(5) (6)
1
0.8
(1)
(2)
(3)
0.4
0
10−1
0
0.4
0.8
VSD (V)
1.2
0
2
4
VGD = 0.
Tamb = 25 °C; tp = 300 µs; δ = 0.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −65 °C.
(1) ID = 0.1 A.
(2) ID = 0.22 A.
(3) ID = 0.45 A.
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
1998 Feb 11
6
8
10
VGS (V)
(4) ID = 0.9 A.
(5) ID = 1.8 A.
(6) ID = 3.6 A.
Fig.11 Drain-source on-state resistance as a function
of gate-source voltage; typical values.
7
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
MBK510
MBK511
1.6
1.2
handbook, halfpage
handbook, halfpage
(1)
k
k
(2)
1.2
0.8
0.8
0.4
0.4
0
−65
−15
V GSth at T j
k = -------------------------------------.
V GSth at 25°C
35
85
135
0
−65
185
Tj (°C)
R DSon at T j
k = ---------------------------------------- .
R DSon at 25 °C
VGSth at VDS = VGS; ID = 1 mA.
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
1998 Feb 11
−15
35
85
135
185
Tj (°C)
(1) RDSon at VGS = 4.5 V; ID = 0.5 mA.
(2) RDSon at VGS = 2.5 V; ID = 0.5 mA.
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
8
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1998 Feb 11
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 11
10
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH103
NOTES
1998 Feb 11
11
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© Philips Electronics N.V. 1998
SCA57
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Printed in The Netherlands
135108/00/04/pp12
Date of release: 1998 Feb 11
Document order number:
9397 750 03303
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