Composite Transistors XP06435 (XP6435) Silicon PNP epitaxial planar type (0.425) For high-frequency amplification 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number 0.9±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −30 V Collector-emitter voltage (Base open) VCEO −20 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −30 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ • 2SA1022 × 2 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) EIAJ: SC-88 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: 7W Internal Connection 6 5 Tr2 Tr1 1 4 2 3 ■ Electrical Characteristics Ta = 25°C ± 2°C Parameter Symbol Conditions Min Typ Max VBE VCE = −10 V, IC = −1 mA Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −10 µA Forward current transfer ratio hFE VCB = −10 V, IE = 1 mA 220 VCE(sat) IC = −10 mA, IB = −1 mA Collector-emitter saturation voltage VCB = −10 V, IE = 1 mA, f = 200 MHz − 0.7 Unit Base-emitter voltage 50 − 0.1 150 V V Transition frequency fT MHz Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz 2.8 dB Reverse transfer impedance Zrb VCB = −10 V, IE = 1 mA, f = 2 MHz 22 Ω Reverse transfer capacitance (Common emitter) Cre VCE = −10 V, IC = −1 mA, f = 10.7 MHz 1.2 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJJ00213BED 1 XP06435 IC VCE Collector current IC (mA) 100 50 IB = −250 µA −20 −200 µA −15 −150 µA −10 −100 µA −50 µA −5 0 40 80 120 100 160 −4 −6 hFE IC Cob VCB Ta = 75°C 25°C −25°C 40 20 −10 −100 6 4 3 2 1 0 − 0.1 fT I E −1 −10 −25°C − 0.01 − 0.1 300 200 4 3 2 1 10 Emitter current IE (mA) 100 −100 5 VCB = −10 V f = 100 MHz Ta = 25°C 4 16 12 8 0 − 0.1 −10 Collector-emitter voltage VCE (V) NF IE 3 2 1 4 100 −100 IC = −1 mA f = 10.7 MHz Ta = 25°C 0 −1 −100 Noise figure NF (dB) Power gain GP (dB) 400 −10 5 VCE = −10 V f = 100 MHz Ta = 25°C 20 500 −1 Collector current IC (mA) GP IC 24 VCB = −10 V Ta = 25°C Transition frequency fT (MHz) Ta = 75°C 25°C Collector-base voltage VCB (V) 600 2 −1 Cre VCE f = 1 MHz IE = 0 Ta = 25°C 5 Collector current IC (mA) 1 −10 _ VCE = −10 V −1 IC / IB = 10 − 0.1 −10 Collector-emitter voltage VCE (V) 60 0 0.1 −8 Ambient temperature Ta (°C) 80 0 − 0.1 −2 0 −100 Reverse transfer capacitance Cre (pF) (Common emitter) 0 Collector output capacitance C (pF) (Common base, input open circuited) ob Total power dissipation PT (mW) 150 120 Forward current transfer ratio hFE Ta = 25°C −25 200 0 VCE(sat) IC −30 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 250 −1 −10 Collector current IC (mA) SJJ00213BED −100 0 0.1 1 Emitter current IE (mA) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP