Transistors 2SB0779 (2SB779) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE at the low collector voltage • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.8+0.2 –0.3 3 ■ Features 2.90+0.20 –0.05 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −25 V Collector-emitter voltage (Base open) VCEO −20 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −500 mA Peak collector current ICP −1 A Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 1.1+0.2 –0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 1A ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −25 V Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −20 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −25 V, IE = 0 ICEO VCE = −20 V, IB = 0 Collector-emitter cutoff current (Base open) VCE = −2 V, IC = −500 mA 90 VCE = −2 V, IC = −1 A 25 Forward current transfer ratio *1 hFE1 *2 Collector-emitter saturation voltage *1 VCE(sat) IC = −500 mA, IB = −50 mA VBE(sat) IC = −500 mA, IB = −50 mA hFE2 Base-emitter saturation voltage *1 Transition frequency fT Collector output capacitance (Common-emitter reverse transfer) Cob V −100 nA −1 µA 220 − 0.2 − 0.4 −1.2 V V VCB = −10 V, IE = 50 mA, f = 200 MHz 150 MHz VCB = −10 V, IE = 0, f = 1 MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00054BED 1 2SB0779 VCE(sat) IC −100 Collector-emitter saturation voltage VCE(sat) (V) 160 120 80 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 40 0 0 40 80 120 160 − 0.01 − 0.01 Ambient temperature Ta (°C) − 0.1 Transition frequency fT (MHz) Forward current transfer ratio hFE 400 300 Ta = 75°C 25°C −25°C 100 − 0.1 −1 Collector current IC (A) 2 −1 −10 −10 75°C − 0.01 − 0.01 VCB = −10 V Ta = 25°C 240 160 80 1 − 0.1 −1 −10 Collector current IC (A) 320 0 0.1 Ta = −25°C Cob VCB 400 VCE = −2 V 0 − 0.01 25°C −1 fT I E 500 200 −10 Collector current IC (A) hFE IC 600 IC / IB = 10 − 0.1 −25°C 10 Emitter current IE (mA) SJC00054BED 100 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (mW) 200 VBE(sat) IC −100 Base-emitter saturation voltage VBE(sat) (V) PC Ta 240 60 IE = 0 f = 1 MHz Ta = 25°C 50 40 30 20 10 0 −1 −10 −100 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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