6ED003L06-C2 Data Sheet (737 KB, EN)

Eice DR IV ER ™ Co m pac t
High voltage gate driver IC
6E D f a mil y - 2 nd g e nera tion
Chip pr od uct
3 phase 600 V gate drive IC
6ED003L06-C2
6EDL04I06PC
6EDL04I06NC
6EDL04N06PC
EiceDRIVER™ Compact
datash eet
<Revision 2.5>, 20.04.2015
Indust rial Po wer C o ntrol
Edition 20.04.2015
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
Revision History
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Subjects (major changes since previous revision)
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revised wording of test temperature
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Last Trademarks Update 2010-10-26
datasheet
3
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
Table of Contents
1
Overview ............................................................................................................................................. 7
2
Blockdiagram...................................................................................................................................... 9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
Chip size, bondpad configuration and description ...................................................................... 11
Mechanical data ................................................................................................................................. 11
Pad description................................................................................................................................... 12
Low Side and High Side Control Pins (Pin 2, 3, 4, 5, 6, 7) ................................................................ 13
EN (Gate Driver Enable, Pin 10) ........................................................................................................ 13
FAULT (Fault Feedback, Pin 8) ......................................................................................................... 13
ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11) ......................................................... 14
VCC, VSS and COM (Low Side Supply, Pin 1, 12,13) ...................................................................... 14
VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28) ............................................. 14
LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27) ............................... 14
4
4.1
4.2
4.3
4.4
4.5
4.6
Electrical Parameters ....................................................................................................................... 15
Absolute Maximum Ratings ............................................................................................................... 15
Required operation conditions ........................................................................................................... 16
Operating Range ................................................................................................................................ 16
Static logic function table ................................................................................................................... 17
Static parameters ............................................................................................................................... 17
Dynamic parameters .......................................................................................................................... 20
5
Quality disclaimer ............................................................................................................................ 21
6
Timing diagrams............................................................................................................................... 22
datasheet
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EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
datasheet
Typical Application ............................................................................................................................... 8
Block diagram for 6ED003L06-C2, and 6EDL04I06NC (with ultra fast BS diodes) ............................. 9
Block Diagram for 6EDL04I06PC, and 6EDL04N06PC ..................................................................... 10
Bond pad configuration of 6ED family (signals HIN1,2,3 and LIN1,2,3 according to Table 1) .......... 11
Input pin structure for negative logic (left) and positive logic (right) ................................................... 13
Input filter timing diagram for negative logic (left) and positive logic (right) ....................................... 13
EN pin structures ................................................................................................................................ 13
FAULT pin structures ......................................................................................................................... 14
Timing of short pulse suppression (6EDL04I06NC, 6ED003L06-C2)................................................ 22
Timing of short pulse suppression (6EDL04I06PC, 6EDL04N06PC) ................................................ 22
Timing of of internal deadtime (input logic according to Table 1) ...................................................... 22
Enable delay time definition ............................................................................................................... 23
Input to output propagation delay times and switching times definition (6EDL04I06NC, 6ED003L06C2) ...................................................................................................................................................... 23
Input to output propagation delay times and switching times definition (6EDL04I06PC,
6EDL04N06PC).................................................................................................................................. 23
Operating areas (6EDL04I06NC, 6EDL04I06PC, 6ED003L06-C2)................................................... 23
Operating Areas (6EDL04N06PC) ..................................................................................................... 24
ITRIP-Timing ...................................................................................................................................... 24
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6ED family - 2nd generation chip product
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
datasheet
nd
Members of 6ED family – 2 generation ............................................................................................. 7
Mechanical parameters ...................................................................................................................... 11
Pad position and dimension ............................................................................................................... 11
Pad Description .................................................................................................................................. 12
Abs. maximum ratings ........................................................................................................................ 15
Required Operation Conditions .......................................................................................................... 16
Operating range ................................................................................................................................. 16
Static parameters ............................................................................................................................... 17
Dynamic parameters .......................................................................................................................... 20
6
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
EiceDRIVER™ Compact
3 phase 600 V gate drive IC
Overview
1
Main features

Thin-film-SOI-technology

Maximum blocking voltage +600V

Separate control circuits for all six drivers

CMOS and LSTTL compatible input (negative logic)

Signal interlocking of every phase to prevent cross-conduction

Detection of over current and under voltage supply

externally programmable delay for fault clear after over current detection
Chip product
Product highlights

Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology

Ultra fast bootstrap diodes (except 6ED003L06-C2)

'shut down' of all switches during error conditions
Typical applications

Home appliances

Fans, pumps

General purpose drives
Product family
Table 1
nd
Members of 6ED family – 2
Sales Name
generation
high side control
input HIN1,2,3 and
LIN1,2,3
typ. UVLOThresholds
Bootstrap diode Package
Replacement for
st
1 generation
6EDL04I06NC
negative logic
11.7 V / 9.8 V
Yes
sawn on foil
No
6EDL04I06PC
positive logic
11.7 V / 9.8 V
Yes
sawn on foil
No
6EDL04N06PC
positive logic
9 V / 8.1 V
Yes
sawn on foil
No
6ED003L06-C2
negative logic
11.7 V / 9.8 V
No
sawn on foil
Yes
Description
nd
The device 6ED family – 2 generation is a full bridge driver to control power devices like MOS-transistors or
IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology
there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the
device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.
The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down
to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin
ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down off all six switches. An
error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be
adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 µA. Therefore,
the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and 375 mA for pull
down. Because of system safety reasons a 310 ns interlocking time has been realised. The function of input EN
datasheet
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EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
can optionally be extended with an over-temperature detection, using an external NTC-resistor (see Fig.1). The
monolithic integrated bootstrap diode structures between pins VCC and VBx can be used for power supply of
the high side.
DC-Bus
VCC
VCC
HIN1,2,3
LIN1,2,3
EN
HIN1,2,3
LIN1,2,3
EN
VB1,2,3
HO1,2,3
To Load
VS1,2,3
5V
FAULT
FAULT
LO1,2,3
RRCIN
CRCIN
COM
RCIN
ITRIP
VSS
R Sh
VSS
Signals HIN1,2,3 and LIN1,2,3 according to Table 1
Figure 1
datasheet
Typical Application
8
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6ED family - 2nd generation chip product
Blockdiagram
2
BOOTSTRAP DIODE-VB1
BIAS NETWORK / VDD2
INPUT NOISE
FILTER
HIN1
LIN1
INPUT NOISE
FILTER
HIN2
INPUT NOISE
FILTER
VB1
BIAS NETWORK - VB1
DEADTIME &
SHOOT-THROUGH
PREVENTION
LATCH
HV LEVEL-SHIFTER
+ REVERSE-DIODE
z
COMPAR
ATOR
UVDETECT
GateDrive
HO1
VS1
BOOTSTRAP DIODE-VB2
LIN2
INPUT NOISE
FILTER
HIN3
INPUT NOISE
FILTER
VB2
BIAS NETWORK - VB2
DEADTIME &
SHOOT-THROUGH
PREVENTION
LATCH
HV LEVEL-SHIFTER
+ REVERSE-DIODE
COMPAR
ATOR
UVDETECT
GateDrive
HO2
VS2
BOOTSTRAP DIODE-VB3
LIN3
INPUT NOISE
FILTER
EN
INPUT NOISE
FILTER
VB3
BIAS NETWORK / VB3
DEADTIME &
SHOOT-THROUGH
PREVENTION
LATCH
HV LEVEL-SHIFTER
+ REVERSE-DIODE
COMPAR
ATOR
UVDETECT
GateDrive
HO3
VS3
>1
ITRIP
VCC
UVDETECT
DELAY
VSS / COM
LEVELSHIFTER
GateDrive
LO1
DELAY
VSS / COM
LEVELSHIFTER
GateDrive
LO2
DELAY
VSS / COM
LEVELSHIFTER
GateDrive
LO3
INPUT NOISE
FILTER
S
VDD2
Q
SET
DOMINANT
LATCH
R
IRCIN
RCIN
COM
FAULT
VSS
>1
Figure 2
datasheet
Block diagram for 6ED003L06-C2, and 6EDL04I06NC (with ultra fast BS diodes)
9
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EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
BOOTSTRAP DIODE-VB1
BIAS NETWORK / VDD2
INPUT NOISE
FILTER
HIN1
LIN1
INPUT NOISE
FILTER
HIN2
INPUT NOISE
FILTER
VB1
BIAS NETWORK - VB1
DEADTIME &
SHOOT-THROUGH
PREVENTION
LATCH
HV LEVEL-SHIFTER
+ REVERSE-DIODE
z
COMPAR
ATOR
UVDETECT
GateDrive
HO1
VS1
BOOTSTRAP DIODE-VB2
LIN2
INPUT NOISE
FILTER
HIN3
INPUT NOISE
FILTER
VB2
BIAS NETWORK - VB2
DEADTIME &
SHOOT-THROUGH
PREVENTION
LATCH
HV LEVEL-SHIFTER
+ REVERSE-DIODE
COMPAR
ATOR
UVDETECT
GateDrive
HO2
VS2
BOOTSTRAP DIODE-VB3
VB3
BIAS NETWORK / VB3
DEADTIME &
SHOOT-THROUGH
PREVENTION
LATCH
HV LEVEL-SHIFTER
+ REVERSE-DIODE
COMPAR
ATOR
UVDETECT
GateDrive
INPUT NOISE
FILTER
LIN3
HO3
VS3
>1
INPUT NOISE
FILTER
EN
ITRIP
VCC
UVDETECT
DELAY
VSS / COM
LEVELSHIFTER
GateDrive
LO1
DELAY
VSS / COM
LEVELSHIFTER
GateDrive
LO2
DELAY
VSS / COM
LEVELSHIFTER
GateDrive
LO3
INPUT NOISE
FILTER
S
VDD2
Q
SET
DOMINANT
LATCH
R
IRCIN
RCIN
COM
FAULT
VSS
>1
Figure 3
datasheet
Block Diagram for 6EDL04I06PC, and 6EDL04N06PC
10
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EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
3
Chip size, bondpad configuration and description
3.1
Mechanical data
Table 2
Mechanical parameters
Raster size of die
2544 x 1706
µm x µm
Area total / active
4.34 / 4.65
mm²
Thickness
280
µm
Wafer size
200
mm
Max. possible chips per wafer
5908
pcs
Passivation frontside
Polyimide
Backside (Note 2)
Grinded silicon
Reject ink dot diameter
Min. 0.6 max 1.2
mm
Note1: Filler material inside the mould compound with sharp edges may harm the passivation.
Note2: Chip must be bonded onto an electrically isolated area
All pad openings are designed for gold wire ball bonds and not for aluminum wedge bonds.
y
x
Figure 4
Table 3
Pad Name
Bond pad configuration of 6ED family (signals HIN1,2,3 and LIN1,2,3 according to Table 1)
Pad position and dimension
Pad Number
Voltage
Domain
Pad Center Coordinates /µm Active Pad Dimension /µm
X
Y
X
Y
VCC
1
1
271
565
80
145
HIN1
2
1
271
423
80
80
HIN2
3
1
271
313
80
80
HIN3
4
1
271
203
80
80
LIN1
5
1
390
185
80
80
LIN2
6
1
669
185
80
80
datasheet
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EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
Table 3
Pad Name
Pad position and dimension
Pad Number
Voltage
Domain
Pad Center Coordinates /µm Active Pad Dimension /µm
X
Y
X
Y
LIN3
7
1
862
185
80
80
FAULT
8
1
1063
185
80
80
ITRIP
9
1
1210
185
80
80
EN
10
1
1488
185
80
80
RCIN
11
1
1637
185
80
80
VSS
12
1
2104
171
160
100
COM
13
1
2305
226
160
80
LO3
14
1
2350
349
80
80
LO2
15
1
2350
469
80
80
LO1
16
1
2350
619
80
140
VS3
18
2
2217
1325
140
80
HO3
19
2
2047
1325
140
80
VB3
20
2
1877
1325
140
80
VS2
22
3
1440
1325
140
80
HO2
23
3
1270
1325
140
80
VB2
24
3
1100
1325
140
80
VS1
26
4
324
1325
140
80
HO1
27
4
294
1185
80
140
VB1
28
4
294
1014
80
140
floating
---
---
---
---
Chip back side ---
3.2
Pad description
Table 4
Pad Description
Symbol
Description
VCC
Low side power supply
VSS
Logic ground
/HIN1,2,3
High side logic input (negative logic)
/LIN1,2,3
Low side logic input (negative logic)
/FAULT
Indicates over-current and under-voltage (negative logic, open-drain output)
EN
Enable I/O functionality (positive logic)
ITRIP
Analog input for over-current shutdown, activates FAULT and RCIN to VSS
RCIN
external RC-network to define FAULT clear delay after FAULT-Signal (TFLTCLR)
COM
Low side gate driver reference
VB1,2,3
High side positive power supply
HO1,2,3
High side gate driver output
VS1,2,3
High side negative power supply
LO1,2,3
Low side gate driver output
Chip back side Floating back side (floats towards the highest momentarily active potential)
datasheet
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EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
3.3
Low Side and High Side Control Pins (Pin 2, 3, 4, 5, 6, 7)
The Schmitt trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility down to 3.3 V
controller outputs. Input Schmitt trigger and noise filter provide beneficial noise rejection to short input pulses
according to Figure 5 and Figure 6.
Vcc
Schmitt-Trigger
HINx
LINx
Schmitt-Trigger
INPUT NOISE
FILTER
UZ=10.5V
HINx
LINx
SWITCH LEVEL
VIH; VIL
Figure 5
 5k
INPUT NOISE
FILTER
UZ=10.5V
SWITCH LEVEL
VIH; VIL
Input pin structure for negative logic (left) and positive logic (right)
An internal pull-up of about 75 k (negative logic) pre-biases the input during supply start-up and a ESD zener
clamp is provided for pin protection purposes. The zener diodes are therefore designed for single pulse stress
only and not for continuous voltage stress over 10V. For versions with positive, a 5 k pull-down resistor is used
for this function.
a)
tFILIN
LIN
b)
a)
tFILIN
tFILIN
b)
tFILIN
HIN
LIN
LIN
HIN
LIN
HO
LO
LO
HO
LO
high
LO
Figure 6
high
low
low
Input filter timing diagram for negative logic (left) and positive logic (right)
It is anyway recommended for proper work of the driver not to provide input pulse-width lower than 1 µs.
nd
The 6ED family – 2 generation provides additionally a shoot through prevention capability which avoids the
simultaneous on-state of two channels of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When
two inputs of a same leg are activated, only one leg output is activated, so that the leg is kept steadily in a safe
state. Please refer to the application note AN-Gatedrive-6ED2-1 for a detailed description.
A minimum dead time insertion of typ. 310 ns is also provided, in order to reduce cross-conduction of the
external power switches.
3.4
EN (Gate Driver Enable, Pin 10)
The signal applied to pin EN controls directly the output stages. All outputs are set to LOW, if EN is at LOW
logic level. The internal structure of the pin is given in Figure 7. The switching levels of the Schmitt-Trigger are
here VEN,TH+ = 2.1 V and VEN,TH- = 1.3 V. The typical propagation delay time is tEN = 780 ns. There is an internal
pull down resistor (75 k), which keeps the gate outputs off in case of broken PCB connection.
EN
IEN+, IEN-
VZ= 10.5 V
INPUT NOISE
FILTER
VEN,TH+,
VEN,TH-
6ED family – 2nd generation
Figure 7
3.5
EN pin structures
/FAULT (Fault Feedback, Pin 8)
/Fault pin is an active low open-drain output indicating the status of the gate driver (see Figure 8). The pin is
active (i.e. forces LOW voltage level) when one of the following conditions occur:
datasheet
13
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EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product

Under-voltage condition of VCC supply: In this case the fault condition is released as soon as the
supply voltage condition returns in the normal operation range (please refer to VCC pin description for
more details).

Over-current detection (ITRIP): The fault condition is latched until current trip condition is finished and
RCIN input is released (please refer to ITRIP pin).
VDD
6ED family –
2nd generation
VCC
RON,FLT
FAULT
Figure 8
3.6
>1
from ITRIP-Latch
from uv-detection
/FAULT pin structures
ITRIP and RCIN (Over-Current Detection Function, Pin 9, 11)
nd
The 6ED family – 2 generation provides an over-current detection function by connecting the ITRIP input with
the motor current feedback. The ITRIP comparator threshold (typ 0.44 V) is referenced to VSS ground. A input
noise filter (typ. tITRIPMIN = 230 ns) prevents the driver to detect false over-current events.
Over-current detection generates a hard shut down of all outputs of the gate driver and provides a latched fault
feedback at /FAULT pin. RCIN input/output pin is used to determine the reset time of the fault condition. As
soon as ITRIP threshold is exceeded the external capacitor connected to RCIN is fully discharged. The
capacitor is then recharged by the RCIN current generator when the over-current condition is finished. As soon
as RCIN voltage exceeds the rising threshold of typ VRCIN,TH = 5.2 V, the fault condition releases and the driver
returns operational following the ontrol input pins according to section 3.3. Please refer to AN-Gatedrive-6ED2-1
for details on setting RCIN time constant.
3.7
VCC, VSS and COM (Low Side Supply, Pin 1, 12,13)
VCC is the low side supply and it provides power both to input logic and to low side output power stage. Input
logic is referenced to VSS ground as well as the under-voltage detection circuit. Output power stage is
referenced to COM ground. COM ground is floating respect to VSS ground with a maximum range of operation
of +/-5.7 V. A back-to-back zener structure protects grounds from noise spikes.
The under-voltage circuit enables the device to operate at power on when a typical supply voltage higher than
VCCUV+ is present. The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below
VCCUV- = 9.8 V respectively 8.1 V. This prevents the external power switches from critically low gate voltage
levels during on-state and therefore from excessive power dissipation.
3.8
VB1,2,3 and VS1,2,3 (High Side Supplies, Pin 18, 20, 22, 24, 26, 28)
VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the
external high side power device emitter/source voltage. Due to the low power consumption, the floating driver
stage can be supplied by bootstrap topology connected to VCC.
The device operating area as a function of the supply voltage is given in Figure 15 and Figure 16. Details on
bootstrap supply section and transient immunity can be found in application note AN-Gatedrive-6ED2-1.
3.9
LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23, 27)
Low side and high side power outputs are specifically designed for pulse operation such as gate drive of IGBT
and MOSFET devices. Low side outputs (i.e. LO1,2,3) are state triggered by the respective inputs, while high
side outputs (i.e. HO1,2,3) are edge triggered by the respective inputs. In particular, after an under voltage
condition of the VBS supply, a new turn-on signal (edge) is necessary to activate the respective high side
output, while after a under voltage condition of the VCC supply, the low side outputs switch to the state of their
respective inputs.
datasheet
14
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
4
Electrical Parameters
4.1
Absolute Maximum Ratings
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. All parameters are
valid for Ta=25 °C.
Table 5
Abs. maximum ratings
Parameter
Symbol
VS
High side offset voltage(Note 1)
Min.
Max.
Unit
VCC-VBS-6
600
V
VCC -VBS – 50 –
High side offset voltage (tp<500ns, Note 1)
High side offset voltage(Note 1)
VB
High side offset voltage (tp<500ns, Note 1)
Chip back side
VBack
High side floating supply voltage (VB vs. VS) (internally clamped)
VCC – 6
620
VCC – 50
–
VCC-VBS-6
620
-1
High side output voltage (VHO vs. VS)
VHO
-0.5
20
VB + 0.5
Low side supply voltage (internally clamped)
Low side supply voltage (VCC vs. VCOM)
VCC
-1
20
VCCOM
-0.5
25
Gate driver ground
Low side output voltage (VLO vs. VCOM)
VCOM
-5.7
VLO
-0.5
5.7
VCCOM + 0.5
Input voltage LIN,HIN,EN,ITRIP
VIN
-1
FAULT output voltage
VFLT
-0.5
RCIN output voltage
VRCIN
TJ
-0.5
–
VCC + 0.5
Junction temperature
Storage temperature
TS
- 40
150
offset voltage slew rate
dVS/dt
10
VCC + 0.5
125
50
°C
V/ns
Note :The minimum value for ESD immunity is 1.0kV (Human Body Model). ESD immunity inside pins connected to the low side (VCC,
HINx, LINx, FAULT, EN, RCIN, ITRIP, VSS, COM, LOx) and pins connected inside each high side itself (VBx, HOx, VSx) is guaranteed up
to 1.5kV (Human Body Model).
Note 1 : In case VCC > VB there is an additional power dissipation in the internal bootstrap diode between pins VCC and VBx. Insensitivity of
bridge output to negative transient voltage up to –50V is not subject to production test – verified by design / characterization.
datasheet
15
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
4.2
Required operation conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. All parameters are
valid for Ta=25 °C.
Table 6
Required Operation Conditions
Parameter
Symbol
VB
Min.
Max.
Unit
High side offset voltage (Note 1)
7
620
V
Low side supply voltage (VCC vs. VCOM)
VCCOM
10
25
4.3
Operating Range
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. All parameters are
valid for Ta=25 °C.
Table 7
Operating range
Parameter
Symbol
VS
High side floating supply offset voltage
13
17.5
10
VBS
0
VCC
6EDL04I06NC VCC
6EDL04I06PC
6ED003L06-C2
13
17.5
6EDL04N06PC
10
17.5
Low side output voltage (VLO vs. VCOM)
VLO
Low side supply voltage
Unit
V
-1.0
VBCC
6EDL04I06NC VBS
6EDL04I06PC
6ED003L06-C2
6EDL04N06PC
VHO
High side output voltage (VHO vs. VS)
Max.
550
550
High side floating supply offset voltage (VB vs. VCC, statically)
High side floating supply voltage (VB vs. VS, Note 1)
Min.
VCC VBS -1
Low side ground voltage
VCOM
-2.5
2.5
Logic input voltages LIN,HIN,EN,ITRIP (Note 2)
VIN
0
FAULT output voltage
VFLT
0
5
VCC
RCIN input voltage
VRCIN
0
VCC
Pulse width for ON or OFF (Note 3)
tIN
1
–
µs
Ambient temperature
Ta
-40
95
°C
Note 1 : Logic operational for VB (VB vs. VS) > 7,0V
Note 2 : All input pins (HINx, LINx) and EN, ITRIP pin are internally clamped (see abs. maximum ratings)
Note 3 : In case of input pulse width at LINx and HINx below 1µ the input pulse may not be transmitted properly
datasheet
16
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
4.4
Static logic function table
VCC
VBS
RCIN
ITRIP
ENABLE
FAULT
LO1,2,3
HO1,2,3
<VCCUV–
X
X
X
X
0
0
0
15V
<VBSUV–
X
0
3.3 V
High imp
LIN1,2,3*
0
15V
15V
<3.2 V 
0
3.3 V
0
0
0
15V
15V
X
> VIT,TH+
3.3 V
0
0
0
15V
15V
> VRCIN,TH
0
3.3 V
High imp
LIN1,2,3*
HIN1,2,3*
15V
15V
> VRCIN,TH
0
0
High imp
0
0
* according to Table 1
4.5
Static parameters
VCC = VBS = 15V unless otherwise specified. All parameters are valid for Ta=25 °C.
Table 8
Static parameters
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Test condition
High level input voltage
VIH
1.7
2.1
2.4
Low level input voltage
VIL
0.7
0.9
1.1
EN positive going threshold
VEN,TH+
1.9
2.1
2.3
EN negative going threshold
VEN,TH-
1.1
1.3
1.5
ITRIP positive going threshold
VIT,TH+
380
445
510
mV
ITRIP input hysteresis
VIT,HYS
45
70
RCIN positive going threshold
VRCIN,TH
-
5.2
6.4
V
RCIN input hysteresis
VRCIN,HYS
-
2.0
-
Input clamp voltage
(HIN and LIN acc. Table 1, EN, ITRIP)
VIN,CLMAP
9
10.3
12
IIN = 4mA
Input clamp voltage at high impedance
(/HIN, /LIN negative logic only)
High level output voltage
LO1,2,3
HO1,2,3
VIN,FLOAT
-
5.3
5.8
controller output
pin floating
VOH
-
VCC -0.7 VCC -1.4
VB -0.7 VB -1.4
IO = 20mA
Low level output voltage
VOL
-
VCOM+
0.6
VS + 0.6
IO = -20mA
-
VCOM+
0.2
VS+ 0.2
6EDL04I06NC VCCUV+
6EDL04I06PC VBSUV+
6ED003L06-C2
6EDL04N06PC
11
11.7
12.5
8.3
9
9.8
6EDL04I06NC VCCUV–
6EDL04I06PC VBSUV–
6ED003L06-C2
6EDL04N06PC
9.5
9.8
10.8
7.5
8.1
8.8
LO1,2,3
HO1,2,3
VCC and VBS supply
undervoltage positive
going threshold
VCC and VBS supply
undervoltage negative
going threshold
datasheet
17
V
V
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
Table 8
Static parameters
Parameter
Symbol
Values
Unit
Test condition
µA
VS = 600V
TJ = 125°C,
VS = 600V
Min.
Typ.
Max.
1.2
1.9
-
0.5
0.9
-
-
1
12.5
-
10
-
High side leakage current between VSx and ILVS–
VSy (x=1,2,3 and y=1,2,3)
IQBS1
Quiescent current VBS supply (VB only)
IQBS2
Quiescent current VBS supply (VB only)
-
10
-
-
210
400
-
210
400
Quiescent current VCC
supply (VCC only)
6EDL04I06NC IQCC1
6ED003L06-C2
-
1.1
1.8
6EDL04I06PC
6EDL04N06PC
6EDL04I06NC IQCC2
6ED003L06-C2
6EDL04I06PC
6EDL04N06PC
6EDL04I06NC IQCC3
6ED003L06-C2
6EDL04I06PC
6EDL04N06PC
6EDL04I06NC ILIN+
6ED003L06-C2
-
0.75
1.5
-
1.3
2
VLIN=0, VHIN=3.3 V
0.75
1.5
VLIN=3.3 V, VHIN=0
1.3
2
VLIN=3.3 V, VHIN=0
0.75
1.5
VLIN=3.3 V, VHIN=0
-
70
100
6EDL04I06PC
6EDL04N06PC
6EDL04I06NC ILIN6ED003L06-C2
6EDL04I06PC
6EDL04N06PC
6EDL04I06NC IHIN+
6ED003L06-C2
400
700
1100
-
110
200
-
70
100
6EDL04I06PC
6EDL04N06PC
400
700
1100
-
110
200
VHIN=0
45
120
VITRIP=3.3 V
45
120
VENABLE=3.3 V
VCC and VBS supply
undervoltage lockout
hysteresis
6EDL04I06NC VCCUVH
6EDL04I06PC VBSUVH
6ED003L06-C2
6EDL04N06PC
High side leakage current betw. VS and VSS ILVS+
1
High side leakage current betw. VS and VSS ILVS+
1
Quiescent current VCC
supply (VCC only)
Quiescent current VCC
supply (VCC only)
Input bias current
Input bias current
Input bias current
Input bias current
6EDL04I06NC IHIN6ED003L06-C2
6EDL04I06PC
6EDL04N06PC
IITRIP+
Input bias current (ITRIP=high)
IEN+
Input bias current (EN=high)
Input bias current RCIN (internal current
source)
IRCIN
Mean output current for load capacity
IO+
1
-
TJ = 125°C
VSx - VSy = 600V
µA
HO=low
HO=high
mA
VLIN=float.
µA
VLIN=3.3 V
µA
VLIN=0
0
VHIN=3.3 V
0
-
VRCIN = 2 V
2.8
120
165
-
mA
CL=10 nF
Not subject of production test, verified by characterisation
datasheet
18
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
Table 8
Static parameters
Parameter
Symbol
Values
Min.
charging in range from 3 V (20%) to 6 V
(40%)
Peak output current turn on (single pulse)
IOpk+1
Typ.
Unit
Max.
RL = 0 , tp <10 µs
240
IOMean output current for load capacity
discharging in range from 12 V (80%) to 9 V
(60%)
IOpk-1
Peak output current turn off (single pulse)
250
VF,BSD
Bootstrap diode forward voltage between
VCC and VB (for types with bootstrap diode
only)
IF,BSD
Bootstrap diode forward current between
VCC and VB (for types with bootstrap diode
only)
RBSD
Bootstrap diode resistance (for types with
bootstrap diode only)
Ron,RCIN
RCIN low on resistance of the pull down
transistor
Ron,FLT
FAULT low on resistance of the pull down
transistor
-
1.0
1.3
V
IF=0.5 mA
27
51
75
mA
VF=4 V
24
40
60

VF1=4 V, VF2=5 V
-
40
100
VRCIN=0.5 V
-
45
100
VFAULT=0.5 V
1
375
Test condition
-
CL=10 nF
RL = 0 , tp <10 µs
420
Not subject of production test, verified by characterisation
datasheet
19
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
4.6
Dynamic parameters
VCC = VBS = 15 V, VS = VSS = VCOM unless otherwise specified. All parameters are valid for Ta=25 °C.
Table 9
Dynamic parameters
Parameter
Symbol
ton
Turn-on propagation delay
Turn-off propagation delay 6EDL04I06NC toff
6EDL04I06PC
6ED003L06-C2
6EDL04N06PC
Values
Min.
Typ.
Max.
400
360
530
490
800
760
Unit
Test condition
ns
VLIN/HIN = 0 or 3.3 V
400
530
800
Turn-on rise time
tr
-
60
100
Turn-off fall time
tf
-
26
45
VLIN/HIN = 0 or 3.3 V
CL = 1 nF
Shutdown propagation delay ENABLE
tEN
-
780
1100
VEN=0
Shutdown propagation delay ITRIP
tITRIP
400
670
1000
VITRIP=1 V
Input filter time ITRIP
tITRIPMIN
155
230
380
Propagation delay ITRIP to FAULT
tFLT
-
420
700
Input filter time at LIN/HIN for turn on and off tFILIN
tFILEN
Input filter time EN
120
300
-
300
600
-
Fault clear time at RCIN after ITRIP-fault,
(CRCin=1nF)
tFLTCLR
1.0
1.9
3.0
ms
VLIN/HIN = 0 & 3.3 V
VITRIP = 0
Dead time
DT
150
310
-
ns
VLIN/HIN = 0 & 3.3 V
Matching delay ON, max(ton)-min(ton), ton
are applicable to all 6 driver outputs
MTON
-
20
100
external dead time
> 500 ns
Matching delay OFF, max(toff)-min(toff), toff MTOFF
are applicable to all 6 driver outputs
Output pulse width
6EDL04I06NC PM
6EDL04I06PC
matching. Pwin-PW out
6ED003L06-C2
6EDL04N06PC
-
40
100
external dead time
>500 ns
40
100
PW in > 1 µs
10
100
datasheet
20
VLIN/HIN = 0 & 3.3 V
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
Quality disclaimer
5
The described properties and parameters must be confirmed by specific qualification in the final system. The
results of the qualification must be open to Infineon. Otherwise Infineon does not give any design release or
warranty.
It is the responsibility of the customer to select the suitable set of materials and the manufacturing processes for
the final system, which complies to his requirements in respect of life time.
We recommend to avoid in particular:
















during die separation - unwanted mechanical stress on the wafer, wear out of the cutting blade or any other
cutter misconfiguration possibly causing cracks, chipping and/or delamination of the passivation;
during/after die attachment – die attach delamination causing possibly unwanted high thermal resistance,
unwanted mechanical stress, or reduced electrical conductivity;
during/after die attachment – die attach voids causing possibly unwanted high thermal resistance, unwanted
mechanical stress, or reduced electrical conductivity;
during/after die attachment – unwanted ion migration possibly causing unwanted leakage or electrical
modification of the device;
during/after die attachment – unwanted ion migration causing possibly unwanted leakage or unwanted
electrical modification of the device;
during/after die attachment – unwanted increase of thermal conductivity possibly causing unwanted
overheating of the device;
during electrical interconnect, in particular wire bonding – mechanical overstress possibly causing sheared
wires and/or damaged pads;
during electrical interconnect, in particular wire bonding – lacking bond integrity, in particular non sticking
interconnects on pads possibly causing unwanted misfunction of the device and/or unwanted leakages;
during encapsulation of the device – unwanted shrink or extension of the mould compound possibly causing
corrosion;
during encapsulation of the device – unwanted ion migration causing unwanted leakage or unwanted
electrical modification of the device;
during encapsulation of the device – unsuitable mould, unsuitable moulding processes possibly causing
potentially wire sweep of electrical interconnects;
during encapsulation of the device – sharp moudl filler components possibly causing penetration of the
passivation, hence unwanted environmental influences like corrosion or ion migration etc.
during encapsulation of the device – unsuitable mould with unsuitable thermal conductivity possibly causing
overheating of the device, resulting in damage of single or multiple transistors/diodes causing non
functionality of the device, uncluding unwanted leakages;
during encapsulation of the device – unwanted low creepage distances, possibly bringing about the risk of
high voltage avalanche breakthroughs;
during encapsulation of the device – unsuitable mould and/or mouldling processes possibly causing
delamination, resulting in overheating, leackages, shorts, open accessible voltage carrying parts, shortend
lifetime etc.
during encapsulation of the device – unsuitable thermal behaviour of encapsulation (expansion/shrinking,
state change) possibly resulting in overheating, sheared wire, openly accessible voltage carrying parts.
datasheet
21
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
Timing diagrams
6
tFILIN
tFILIN
tIN
HIN/LIN
HIN/LIN
tIN
tIN < tFILIN
tIN < tFILIN
high
HO/LO
low
HO/LO
HIN/LIN
tIN
HIN/LIN
tIN
tIN > tFILIN
tIN > tFILIN
HO/LO
Figure 9
HO/LO
Timing of short pulse suppression (6EDL04I06NC, 6ED003L06-C2)
tFILIN
HIN/LIN
tFILIN
tIN
tIN
HIN/LIN
tIN < tFILIN
tIN < tFILIN
high
HO/LO
HIN/LIN
HO/LO
low
tIN
HIN/LIN
tIN
tIN > tFILIN
tIN > tFILIN
HO/LO
HO/LO
Figure 10
Timing of short pulse suppression (6EDL04I06PC, 6EDL04N06PC)
LIN1,2,3
1.65V
1.65V
HIN1,2,3
12V
HO1,2,3
3V
DT
DT
12 V
LO1,2,3
3V
Figure 11
datasheet
Timing of of internal deadtime (input logic according to Table 1)
22
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
EN
tEN
HO1,2,3
LO1,2,3
Figure 12
3V
Enable delay time definition
PWIN
LIN1,2,3
1.65V
1.65V
HIN1,2,3
ton
toff
tr
12V
tf
12V
HO1,2,3
LO1,2,3
3V
Figure 13
3V
PWOUT
Input to output propagation delay times and switching times definition (6EDL04I06NC,
6ED003L06-C2)
PWIN
LIN1,2,3
1.65V
1.65V
HIN1,2,3
ton
toff
tr
12V
tf
12V
HO1,2,3
LO1,2,3
3V
Figure 14
3V
PWOUT
Input to output propagation delay times and switching times definition (6EDL04I06PC,
6EDL04N06PC)
20
V
17.5
VCCMAX , VBSMAX
vCC
vBS
13
VCCUV+, VBSUV+ 11.7
VCCUV-, VBSUV- 9.8
t
IC STATE
OFF
Figure 15
datasheet
ON
ON
Recommended
Area
ON
Forbidden
Area
ON
ON
Recommended
Area
ON
OFF
Operating areas (6EDL04I06NC, 6EDL04I06PC, 6ED003L06-C2)
23
<Revision 2.5>, 20.04.2015
EiceDRIVER(tm) Compact
6ED family - 2nd generation chip product
20
V
17.5
VCCMAX , VBSMAX
vCC
vBS
10.0
VCCUV+, VBSUV+ 9.0
VCCUV-, VBSUV- 8.1
t
IC STATE
OFF
Figure 16
ON
ON
Recommended
Area
ON
Forbidden
Area
ON
ON
Recommended
Area
ON
OFF
Operating Areas (6EDL04N06PC)
VRCIN,TH
RCIN
ITRIP
0.1V
0.1V
FAULT
1V
0.5V
tFLT
tFLTCLR
Any
output
Figure 17
datasheet
3V
tITRIP
ITRIP-Timing
24
<Revision 2.5>, 20.04.2015
w w w . i n f i n e o n . c o m
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