Data Sheet

SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001
Product data
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
SI2302DS in SOT23.
2. Features
■
■
■
■
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
3. Applications
■ Battery management
■ High speed switch
■ Low power DC to DC converter.
4. Pinning information
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
Simplified outline
Symbol
3
d
g
1
2
Top view
MSB003
SOT23
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
MBB076
s
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
−
20
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 4.5 V
−
2.5
A
Ptot
total power dissipation
Tsp = 25 °C
−
0.83
W
Tj
junction temperature
−
150
°C
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 3.6 A
56
85
mΩ
VGS = 2.5 V; ID = 3.1 A
77
115
mΩ
Min
Max
Unit
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
Conditions
Tj = 25 to 150 °C
−
20
V
−
±8
V
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
−
2.5
A
Tsp = 70 °C; VGS = 4.5 V; Figure 2
−
2
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
−
10
A
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
−
0.83
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−65
+150
°C
−
0.7
A
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
Rev. 02 — 20 November 2001
2 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa17
03aa25
120
120
Pder
Ider
(%)
(%)
80
80
40
40
0
0
0
50
100
150
0
200
o
50
100
150
o
200
Tsp ( C)
Tsp ( C)
P tot
P der = ---------------------- × 100%
P
°
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ae92
102
ID
(A)
RDSon = VDS / ID
10
tp = 10 µs
1 ms
1
10 ms
DC
10-1
100 ms
10-2
10-1
1
102
10
VDS (V)
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
Rev. 02 — 20 November 2001
3 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Rth(j-sp)
Conditions
Value Unit
thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4
150
K/W
7.1 Transient thermal impedance
03ae91
103
Zth(j-sp)
(K/W)
102
δ = 0.5
0.2
0.1
10
0.05
δ=
P
tp
T
0.02
single pulse
t
tp
T
1
10-4
10-3
10-2
10-1
1
tp (s)
10
Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
Rev. 02 — 20 November 2001
4 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
ID = 10 µA; VGS = 0 V
20
−
−
V
0.65
−
−
V
Tj = 25 °C
−
0.01
1.0
µA
Tj = 55 °C
−
−
10
µA
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
IDSS
drain-source leakage current
VDS = 20 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±8 V; VDS = 0 V
−
10
100
nA
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8
−
56
85
mΩ
VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8
−
77
115
mΩ
Dynamic characteristics
gfs
forward transconductance
VDS = 5 V; ID = 3.6 A
−
8
−
S
Qg(tot)
total gate charge
VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13
−
5.4
10
nC
Qgs
gate-source charge
−
0.65
−
nC
Qgd
gate-drain (Miller) charge
−
1.6
−
nC
Ciss
input capacitance
−
230
−
pF
Coss
output capacitance
−
125
−
pF
Crss
reverse transfer capacitance
−
80
−
pF
td(on)
turn-on delay time
−
12
20
ns
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11
VDD = 10 V; RL = 5.5 Ω; VGS = 4.5 V; RG = 6 Ω
tr
rise time
−
23
35
ns
td(off)
turn-off delay time
−
50
100
ns
tf
fall time
−
34
50
ns
−
0.8
1.2
V
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
Rev. 02 — 20 November 2001
5 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03ae93
10
4.5 V 3 V
ID
(A)
03ae95
10
ID
(A)
8
2.5 V
8
VDS > ID x RDSon
2V
6
6
4
4
2
VGS = 1.5V
2
Tj = 150 ºC
25 ºC
0
0
0
0.5
1
VDS (V)
0
1.5
Tj = 25 °C
2
VGS (V)
3
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ae94
0.1
RDSon
1
Tj = 25 ºC
VGS = 2.5 V
03ad57
2
a
(Ω)
0.09
1.6
1.2
0.08
3V
0.8
0.07
4.5 V
0.06
0.4
0
0.05
0
2
4
6
8 I (A) 10
D
Tj = 25 °C
-60
0
60
120
Tj (ºC)
180
R DSon
a = --------------------------R
°
DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
Rev. 02 — 20 November 2001
6 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03ag05
03ah78
10-1
1.2
ID
(A)
10-2
VGS(th)
(V)
typ
0.8
10-3
min
min
typ
10-4
0.4
10-5
10-6
0
-60
0
60
120
0
180
0.4
Tj (ºC)
0.8
VGS (V)
1.2
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ae98
103
C
(pF)
Ciss
102
Coss
Crss
10
10-1
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
Rev. 02 — 20 November 2001
7 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03ae97
10
IS
(A)
8
VGS = 0 V
03ae99
5
VGS
ID = 3.6 A
(V)
4
Tj = 25 ºC
VDD = 10 V
6
3
4
2
2
1
150 ºC
Tj = 25 ºC
0
0
0
0.4
0.8
VSD (V)
1.2
Tj = 25 °C and 150 °C; VGS = 0 V
0
2
3
4
5
QG (nC)
6
ID = 3.6 A; VDD = 10 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
1
Rev. 02 — 20 November 2001
8 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Fig 14. SOT23.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
Rev. 02 — 20 November 2001
9 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6:
Revision history
Rev Date
02
20011120
CPCN
Description
-
Includes product data; second version; supersedes initial version 03 september 2001.
•
•
•
01
20010903
-
Table 5 “Characteristics” Correction to VGS(th) conditions.
Figure 9 Correction to curves.
Figure 10 Correction to curves.
Product specification; initial version.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Product data
Rev. 02 — 20 November 2001
10 of 12
SI2302DS
Philips Semiconductors
N-channel enhancement mode field-effect transistor
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09107
Rev. 02 — 20 November 2001
11 of 12
Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 20 November 2001
Document order number: 9397 750 09107
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