Fast Recovery Diodes (FRD) MA3U690 Silicon planar type Unit : mm For high-frequency rectification 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 2.3 ± 0.1 0.5 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.0 ± 0.2 1.0 ± 0.1 0.1 ± 0.05 0.93 ± 0.1 0.8 max. 2.5 ± 0.1 7.3 ± 0.1 • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr • Single type 1.8 ± 0.1 ■ Features 0.5 ± 0.1 0.75 ± 0.1 Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 200 V Non-repetitive peak reverse surge voltage VRSM 200 V Average forward current*1 IF(AV) 5 A Non-repetitive peak forward surge current*2 IFSM 40 A Junction temperature Tj −40 to +150 °C Storage temperature Tstg −40 to +150 °C 2.3 ± 0.1 4.6 ± 0.1 1 2 3 1 : N.C. 2 : Cathode 3 : Anode U-Type Package Note) *1 : TC = 25°C *2 : Half sine-wave; 10 ms/cycle ■ Electrical Characteristics Ta = 25°C Parameter Symbol Repetitive peak reverse current Conditions Typ Max Unit IRRM1 VRRM = 200 V, TC = 25°C 20 µA IRRM2 VRRM = 200 V, Tj = 150°C 2 mA Forward voltage (DC) VF IF = 5 A, TC = 25°C Reverse recovery time*2 trr IF = 1 A, IR = 1 A Thermal resistance*1 Min Rth(j-c) Direct current (between junction and case) 0.98 V 45 ns 12.5 °C/W Note) 1. Rated input/output frequency: 200 MHz 2. *1 : TC = 25°C *2 : trr measuring circuit 50 Ω 50 Ω trr IF D.U.T 5.5 Ω IR 0.1 × IR 1 MA3U690 Fast Recovery Diodes (FRD) IF V F 100°C 25°C Ta = 150°C IR VR 10 000 Ta = 150°C 1.4 −20°C 1 000 Forward voltage VF (V) 1 Forward current IF (A) VF Ta 1.6 0.1 0.01 Reverse current IR (nA) 10 1.2 1.0 IF = 5 A 0.8 2.5 A 0.6 1A 0.4 0.001 100°C 100 10 25°C 1 0.2 0.000 1 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 0.1 0 10 1 120 160 Ambient temperature Ta (°C) 2 200 100 0 50 100 150 200 250 Reverse voltage VR (V) 0 40 80 120 160 200 Reverse voltage VR (V) 200 0 80 200 f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) Reverse current IR (µA) 100 40 160 300 VR = 200 V 100 V 10 V 0 120 Ct VR 1 000 0.1 −40 80 Ambient temperature Ta (°C) IR T a 10 000 40 300 240