Data Sheet

DP
AK
PSMN025-100D
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 4 — 12 January 2012
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC converters
 Switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 4
-
-
47
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
-
150
W
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
22
25
mΩ
VGS = 10 V; ID = 45 A; VDS = 80 V;
Tj = 25 °C; see Figure 13
-
25
-
nC
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain[1]
Simplified outline
Graphic symbol
mb
3
S
source
mb
D
mounting base; connected to
drain
D
G
mbb076
S
2
1
3
SOT428 (DPAK)
[1]
It is not possible to make connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Type number
PSMN025-100D
PSMN025-100D
Product data sheet
Package
Name
Description
Version
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
ID
drain current
-20
20
V
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
33
A
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 4
-
47
A
IDM
peak drain current
pulsed; Tmb = 25 °C; see Figure 4
-
188
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
150
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
47
A
ISM
peak source current
pulsed; Tmb = 25 °C
-
188
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 40 A;
Vsup ≤ 25 V; unclamped; tp = 100 µs;
RGS = 50 Ω
-
260
mJ
IAS
non-repetitive avalanche current
Vsup ≤ 25 V; VGS = 10 V; Tj(init) = 25 °C;
RGS = 50 Ω; unclamped; see Figure 3
-
47
A
Normalised Current Derating, ID (%)
lma016
100
Normalised Power Derating, PD (%)
lma015
100
90
90
80
80
70
60
70
50
60
40
50
30
40
20
30
10
20
0
10
0
Fig 1.
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
Product data sheet
0
0
Continuous drain current as a function of
mounting base temperature
PSMN025-100D
175
Fig 2.
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
175
Normalized total power dissipation as a
function of mounting base temperature
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
Maximum Avalanche Current, IAS (A)
lma029
100
25 C
10
Tj prior to avalanche = 150 C
1
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Fig 3.
Maximum permissible non-repetitive avalanche current as a function of avalanche time
003aah007
103
ID
(A)
Limit RDSon = V DS / ID
102
tp =10 μ s
100 μ s
10
DC
10 ms
100 ms
1
10-1
1
Fig 4.
102
10
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN025-100D
Product data sheet
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction see Figure 5
to mounting base
-
-
1
K/W
thermal resistance from junction SOT428 package ; printed-circuit board
to ambient
mounted ; minimum footprint
-
50
-
K/W
1
Transient thermal impedance, Zth j-mb (K/W)
lma018
D = 0.5
0.2
0.1
0.1
0.05
0.02
P
D
0.01
D = tp/T
tp
single pulse
T
0.001
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN025-100D
Product data sheet
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Rev. 4 — 12 January 2012
© NXP B.V. 2012. All rights reserved.
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
89
-
-
V
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
100
-
-
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
1
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
2
3
4
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
-
-
6
V
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.05
10
µA
VDS = 100 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
0.02
100
nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
0.02
100
nA
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11
-
-
68
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
22
25
mΩ
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
ID = 45 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
VDS = 50 V; RL = 1.8 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
-
61
-
nC
-
13
-
nC
-
25
-
nC
-
2600
-
pF
-
340
-
pF
-
195
-
pF
-
18
-
ns
-
72
-
ns
td(off)
turn-off delay time
-
69
-
ns
tf
fall time
-
58
-
ns
LD
internal drain inductance
measured from tab to centre of die ;
Tj = 25 °C
-
3.5
-
nH
LS
internal source inductance
measured from source lead to source
bond pad ; Tj = 25 °C
-
7.5
-
nH
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
-
0.87
1.2
V
trr
reverse recovery time
-
82
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V; Tj = 25 °C
-
0.26
-
µC
PSMN025-100D
Product data sheet
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Rev. 4 — 12 January 2012
© NXP B.V. 2012. All rights reserved.
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
Drain Current, ID (A)
40
35
Transconductance, gfs (S)
lma019
VGS = 10V
8V
lma022
50
Tj = 25 C
VDS > ID X RDS(ON)
45
6V
Tj = 25 C
40
30
35
25
175 C
30
20
5V
15
4.8 V
10
4.6 V
25
20
15
10
4.4 V
5
5
4.2 V
4V
0
0
0
Fig 6.
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain-Source Voltage, VDS (V)
1.6
1.8
Output characteristics: drain current as a
function of drain-source voltage; typical
function of drain-source voltage; typical values
Drain current, ID (A)
lma021
50
VDS > ID X RDS(ON)
45
0
2
5
Fig 7.
10
15
20
25
30
35
Drain current, ID (A)
4
40
45
50
Forward transconductance as a function of
drain current; typical values
Threshold Voltage, VGS(TO) (V)
4.5
40
lma024
maximum
3.5
35
typical
3
30
2.5
25
minimum
2
20
1.5
15
Tj = 25 C
175 C
10
1
5
0.5
0
0
1
2
3
4
5
6
0
-60
-40
-20
0
Gate-source voltage, VGS (V)
Fig 8.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN025-100D
Product data sheet
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
Fig 9.
Gate-source threshold voltage as a function of
junction temperature
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
Drain current, ID (A)
1.0E-01
minimum
typical
1.0E-04
maximum
1.0E-05
1.0E-06
0
0.5
1
1.5
2
2.5
3
3.5
Gate-source voltage, VGS (V)
4
4.5
Drain-Source On Resistance, RDS(on) (Ohms)
4.2 V
4.4 V
4.6 V
4V
0.14
lma020
Tj = 25 C
4.8 V
0.12
5V
0.1
0.08
0.06
0.04
8V
6V
0.02
VGS = 10V
0
0
2
4
6
8
10
12
Drain Current, ID (A)
14
16
18
Product data sheet
-40
-20
0
20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig 11. Normalized drain source on-state resistance
factor as a function of junction temperature
Gate-source voltage, VGS (V)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
lma027
ID = 45 A
Tj = 25 C
VDD = 20 V
VDD = 80 V
0
5
20
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN025-100D
-60
5
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
0.16
lma023
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
1.0E-02
1.0E-03
Normalised On-state Resistance
lma025
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Gate charge, QG (nC)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
Capacitances, Ciss, Coss, Crss (pF)
10000
lma026
Source-Drain Diode Current, IF (A)
50
Ciss
lma028
VGS = 0 V
45
40
35
1000
30
Coss
175 C
25
Tj = 25 C
20
100
Crss
15
10
5
10
0
0.1
1
10
Drain-Source Voltage, VDS (V)
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN025-100D
Product data sheet
Fig 15. Source current as a function of source-drain
voltage; typical values
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Rev. 4 — 12 January 2012
© NXP B.V. 2012. All rights reserved.
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A1
b2
E1
mounting
base
D2
D1
HD
2
L
L2
1
L1
3
b1
b
w
M
c
A
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
b2
c
D1
D2
min
E
E1
min
e
e1
HD
L
L1
min
L2
w
y
max
mm
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
4.0
6.73
6.47
4.45
2.285
4.57
10.4
9.6
2.95
2.55
0.5
0.9
0.5
0.2
0.2
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
JEITA
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
06-02-14
06-03-16
Fig 16. Package outline SOT428 (DPAK)
PSMN025-100D
Product data sheet
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN025-100D v.4
20120112
Product data sheet
-
PSMN025-100D v.3
-
PSMN025-100D v.2
Modifications:
PSMN025-100D v.3
PSMN025-100D
Product data sheet
•
Various changes to content.
20081120
Product data sheet
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Rev. 4 — 12 January 2012
© NXP B.V. 2012. All rights reserved.
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
9. Legal information
9.1
Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
PSMN025-100D
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 January 2012
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PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN025-100D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 January 2012
© NXP B.V. 2012. All rights reserved.
13 of 14
PSMN025-100D
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 January 2012
Document identifier: PSMN025-100D