Data Sheet

PHP23NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 25 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Higher operating power due to low
thermal resistance
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
110
V
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
-
-
23
A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
100
W
VGS = 10 V; ID = 23 A;
VDS = 80 V; Tj = 25 °C;
see Figure 11
-
10
-
nC
VGS = 10 V; ID = 13 A; Tj = 25 °C;
see Figure 9 and 10
-
49
70
mΩ
Dynamic characteristics
QGD
gate-drain charge
Static characteristics
RDSon
drain-source
on-state resistance
PHP23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
1
G
gate
2
D
drain
Simplified outline
Graphic symbol
D
mb
3
S
source
mb
D
mounting base; connected to
drain
G
S
mbb076
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
PHP23NQ11T
Package
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
110
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
110
V
VGS
gate-source voltage
ID
drain current
-20
20
V
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
16
A
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
-
23
A
-
92
A
IDM
peak drain current
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
100
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
23
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
92
A
-
93
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 14 A; Vsup ≤ 100 V;
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 Ω
energy
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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PHP23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa24
120
03aa16
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
Tmb (°C)
Fig 1.
200
Tmb (°C)
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
Normalized total power dissipation as a
function of mounting base temperature
03ao51
102
Limit R DSon = VDS /ID
ID
(A)
t p = 10 μs
10
100 μs
DC
1 ms
10 ms
100 ms
1
10−1
1
10
102
103
VDS (V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP23NQ11T_2
Product data sheet
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Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
see Figure 4
-
-
1.5
K/W
Rth(j-a)
thermal resistance from junction to ambient vertical in still air
-
60
-
K/W
03ao50
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10−1
δ=
P
0.05
tp
T
0.02
single pulse
t
tp
10−2
10−6
T
10−5
10−4
10−3
10−2
10−1
1
tp (s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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PHP23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
110
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
99
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 7
and 8
2
3
4
V
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 7
and 8
-
-
4.4
V
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 7
and 8
1
-
-
V
µA
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
-
10
VDS = 100 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 13 A; Tj = 175 °C;
see Figure 9 and 10
-
132
189
mΩ
VGS = 10 V; ID = 13 A; Tj = 25 °C; see Figure 9
and 10
-
49
70
mΩ
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
ID = 23 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C;
see Figure 11
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
-
39
-
ns
td(off)
turn-off delay time
-
26
-
ns
tf
fall time
-
24
-
ns
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 12
VDS = 50 V; RL = 2.2 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
-
22
-
nC
-
5
-
nC
-
10
-
nC
-
830
-
pF
-
140
-
pF
-
85
-
pF
-
8
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 11 A; VGS = 0 V; Tj = 25 °C; see Figure 13
-
0.9
1.5
V
trr
reverse recovery time
-
64
-
ns
Qr
recovered charge
IS = 11 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
-
120
-
nC
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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PHP23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
03ao52
20
VGS = 10 V
ID
(A)
Tj = 25 °C
8V
VDS > I D x R DSon
ID
(A)
6V
15
03ao54
20
15
5.4 V
10
10
5.2 V
5V
5
5
4.8 V
4.6 V
4.4 V
0
0
0.5
1
1.5
2
0
VDS (V)
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
03aa32
5
Fig 6.
2
4
VGS (V)
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03aa35
10−1
ID
(A)
VGS(th)
(V)
4
10−5
10−6
0
60
120
Product data sheet
0
180
Tj (°C)
2
4
6
VGS (V)
Gate-source threshold voltage as a function of
junction temperature
PHP23NQ11T_2
max
10−4
min
1
0
−60
typ
10−3
typ
2
min
10−2
max
3
Fig 7.
Tj = 25 °C
150 °C
0
Fig 8.
Sub-threshold drain current as a function of
gate-source voltage
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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PHP23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
03ao53
0.2
4.6 V 4.8 V 5 V
5.2 V
03aa29
3
Tj = 25 °C
R DSon
(Ω)
a
5.4 V
0.15
2
0.1
6V
1
0.05
8V
VGS = 10 V
0
-60
0
0
Fig 9.
5
10
15
20
I D (A)
Drain-source on-state resistance as a function
of drain current; typical values
03ao57
15
ID = 23 A
Tj = 25 °C
VGS
(V)
0
60
120
180
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
03ao56
104
C
(pF)
C iss
103
10
VDD = 20 V
Tj (°C)
80 V
C oss
102
5
C rss
0
0
10
20
30
QG (nC)
40
Fig 11. Gate-source voltage as a function of gate
charge; typical values
PHP23NQ11T_2
Product data sheet
10
10−1
1
10
VDS (V)
102
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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PHP23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
03ao55
20
VGS = 0 V
ID
(A)
15
10
Tj = 25 °C
175 °C
5
0
0
0.3
0.6
0.9
VSD (V)
1.2
Fig 13. Source current as a function of source-drain voltage; typical values
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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PHP23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig 14. Package outline SOT78 (TO-220AB)
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PHP23NQ11T_2
20100225
Product data sheet
-
PHP23NQ11T_1
Modifications:
PHP23NQ11T_1
PHP23NQ11T_2
Product data sheet
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
20040517
Product data
-
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
-
© NXP B.V. 2010. All rights reserved.
10 of 13
PHP23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PHP23NQ11T_2
Product data sheet
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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PHP23NQ11T
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N-channel TrenchMOS standard level FET
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use of
the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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N-channel TrenchMOS standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 25 February 2010
Document identifier: PHP23NQ11T_2