Data Sheet

BSH114
N-channel enhancement mode field effect transistor
Rev. 01 — 09 November 2000
Product specification
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH114 in SOT23.
2. Features
■
■
■
■
TrenchMOS™ technology
Low on-state resistance
Very fast switching
Surface mount package.
3. Applications
c
c
■ Relay driver
■ DC to DC converter
■ General purpose switch.
4. Pinning information
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
Simplified outline
Symbol
3
d
g
1
2
Top view
MSB003
SOT23
1.
TrenchMOS is a trademark of Royal Philips Electronics.
MBB076
s
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
VDS
drain-source voltage (DC)
Conditions
Typ
Max
Unit
Tj = 25 to 150 °C
−
100
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 10 V
−
0.85
A
Ptot
total power dissipation
Tsp = 25 °C
−
0.83
W
Tj
junction temperature
−
150
°C
RDSon
drain-source on-state resistance
400
500
mΩ
Min
Max
Unit
VGS = 10 V; ID = 0.5 A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
−
100
V
VDGR
drain-gate voltage (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
100
V
VGS
gate-source voltage (DC)
−
±20
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
−
0.85
A
IDM
peak drain current
Ptot
total power dissipation
Tsp = 100 °C; VGS = 10 V; Figure 2 and 3
−
0.5
A
Tamb = 25 °C; VGS = 10 V
−
0.5
A
Tamb = 100 °C; VGS = 10 V
−
0.3
A
Tsp = 25 °C; tp ≤ 10 µs; Figure 3
−
3.4
A
Tsp = 25 °C; Figure 1
−
0.83
W
Tamb = 25 °C
−
0.36
W
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
Source-drain (reverse) diode
IS
source (diode forward) current (DC) Tsp = 25 °C
−
0.85
A
ISM
peak (diode forward) source current Tsp = 25 °C; tp ≤ 10 µs
−
3.4
A
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
2 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
03aa25
03aa17
120
120
Pder
(%)
100
Ider
(%)
100
80
80
60
60
40
40
20
20
0
0
0
25
50
75
100
125
Tsp
150
(oC)
0
175
25
50
75
100
125
150 175
Tsp (oC)
VGS ≥ 10 V
P tot
P der = ---------------------- × 100%
P
°
ID
I D = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ac55
10
ID
(A)
RDSon = VDS/ ID
1
tp = 10 µs
100 µs
1 ms
10-1
10 ms
δ=
P
D.C.
tp
100 ms
T
10-2
t
tp
T
10-3
10-1
1
10
102
VDS (V)
103
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; drain and peak currents as a function of drain source voltage.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
3 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Rth(j-sp)
Conditions
Value Unit
thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4
Rth(j-amb) thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
150
K/W
350
K/W
7.1 Transient thermal impedance
03ac54
103
Zth(j-sp)
(K/W)
102
δ = 0.5
0.2
10
δ=
P
0.1
tp
T
0.05
0.02
t
tp
T
single pulse
1
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
4 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
100
130
−
V
Tj = −55 °C
95
−
−
V
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
2
3
4
V
Tj = 150 °C
1.2
−
−
V
Tj = −55 °C
−
−
6
V
Tj = 25 °C
−
1
25
µA
Tj = 150 °C
−
4
250
µA
−
10
100
nA
Tj = 25 °C
−
400
500
mΩ
Tj = 150 °C
−
−
1.15
Ω
VDS = 100 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.5 A; Figure 7 and 8
Dynamic characteristics
gfs
forward transconductance
VDS = 20 V; ID = 0.5 A; Figure 11
0.5
1.2
−
S
Qg(tot)
total gate charge
ID = 0.5 A; VDD = 80 V; VGS = 10 V; Figure 14
−
4.6
−
nC
Qgs
gate-source charge
−
0.8
−
nC
Qgd
gate-drain (Miller) charge
−
2.1
−
nC
Ciss
input capacitance
−
138
−
pF
VGS = 0 V; VDD = 25 V; f = 1 MHz; Figure 12
Coss
output capacitance
−
21
−
pF
Crss
reverse transfer capacitance
−
12
−
pF
td(on)
turn-on delay time
−
6
−
ns
tr
rise time
−
13
−
ns
td(off)
turn-off delay time
−
8
−
ns
tf
fall time
−
5
−
ns
−
0.84
1
V
VDD = 50 V; RD = 100 Ω; VGS = 10 V; RG = 6 Ω
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 0.85 A; VGS = 0 V; Figure 13
trr
reverse recovery time
Qr
recovered charge
IS = 0.5 A; dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 30 V
24
−
ns
37
−
nC
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
−
−
Rev. 01 — 09 November 2000
5 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
03ac56
03ac58
3
3
VGS = 10 V 7 V
Tj = 25 ºC
ID
(A)
6V
VDS > ID X RDSon
ID
(A)
5.8 V
5.6 V
2
2
5.4 V
5.2 V
Tj = 150 ºC
1
Tj = 25 ºC
1
5.0 V
4.8 V
0
0
0
0.5
1
1.5 VDS (V) 2
Tj = 25 °C
0
2
4
6 VGS (V) 8
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristic: drain current as a
function of gate-source voltage; typical values.
03ac57
03aa29
3
VGS = 4.8 V
3
a 2.8
2.6
Tj = 25 ºC
RDSon
(Ω)
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
5.0 V
2
5.2 V
5.4 V
5.6 V
1
5.8 V
6V
7V
10 V
0
0
1
2
3
ID (A)
4
Tj = 25 °C
-60
-20
20
60
100
140
180
Tj (oC)
R DSon
a = --------------------------R
°
DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
6 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
03aa32
5
VGS(th)
4.5
4
(V)
03aa35
10-1
ID
(A)
max.
10-2
3.5
3
10-3
typ.
2.5
min
2
typ
max
10-4
min
1.5
1
10-5
0.5
0
10-6
-60
-20
20
60
100
140
Tj (oC)
180
0
1
2
3
4
VGS (V)
5
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ac60
03ac59
3
2.5
VDS > ID X RDSon
gfs
(S)
2
VGS = 0 V
Tj = 25 ºC
IS
(A)
Tj =150 ºC
2
1.5
1
1
Tj =150 ºC
Tj = 25 ºC
0.5
0
0
0
1
2
ID (A)
3
Tj = 25 °C and 150 °C; VDS > ID x RDSon
0
0.8
VSD (V)
1.2
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
0.4
Rev. 01 — 09 November 2000
7 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
03ac60
3
03ac62
15
VGS = 0 V
Tj = 25 ºC
IS
(A)
VGS
(V)
2
10
ID = 0.5 A
VDD = 20 V
1
VDD = 80 V
5
Tj =150 ºC
Tj = 25 ºC
0
0
0
0.4
0.8
VSD (V)
1.2
Tj = 25 °C and 150 °C; VGS = 0 V
0
6 QG (nC) 8
4
ID = 0.5 A; VDD = 20 V and 80 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage;
typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
2
Rev. 01 — 09 November 2000
8 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
9. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Fig 15. SOT23.
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
9 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
10. Revision history
Table 6:
Revision history
Rev Date
01
20001109
CPCN
Description
-
Product specification; initial version
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
10 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
11. Data sheet status
Datasheet status
Product status
Definition [1]
Objective specification
Development
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
© Philips Electronics N.V. 2000 All rights reserved.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
11 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
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(SCA70)
© Philips Electronics N.V. 2000. All rights reserved.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
12 of 13
BSH114
Philips Semiconductors
N-channel enhancement mode field effect transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 09 November 2000
Document order number: 9397 750 07708
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